Organometallic compounds

Abstract

This invention relates to organometallic compounds represented by the formula H a M(NR 1 R 2 ) x (NR 3 H) y (NH 2 ) z wherein M is a metal or metalloid, each of R 1 , R 2 and R 3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

1 . A process for the production of an organometallic compound comprising (i) reacting in a first pot a nitrogen-containing compound with an alkali metal, or an alkali metal-containing compound, or an alkaline earth metal, or an alkaline earth metal-containing compound, in the presence of a solvent and under reaction conditions sufficient to produce a first reaction mixture comprising a base material, (ii) adding said base material to a second pot containing a metal source compound and optionally an amine compound, (iii) reacting in said second pot said base material with said metal source compound and optionally said amine compound under reaction conditions sufficient to produce a second reaction mixture comprising said organometallic compound, and (iv) separating said organometallic compound from said second reaction mixture; wherein said organometallic compound is represented by the formula H a M(NR 1 R 2 ) x (NR 3 H) y (NH 2 ) z  in which M is a metal or metalloid, R 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 3  is the same or different and is a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1. 
     
     
         2 . The process of  claim 1  wherein the metal source compound comprises tetrachlorosilane, tetrabromosilane, hafnium tetrachloride, tris(dimethylamino)chlorosilane, bis(diethylamino)dichlorosilane, or bis(diethylamino)silane; the base material comprises lithium amide, lithium ethylamide, sodium ethylamide, or lithium t-butylamide; and the amine compound comprises ammonia, ethylamine, or t-butylamine. 
     
     
         3 . The process of  claim 1  wherein said organometallic compound is represented by the formula H a Si(NR 1 R 2 ) x (NR 3 H) y (NH 2 ) z  wherein R 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 3  is the same or different and is a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z=4, provided that at least one of y and z is a value of at least 1. 
     
     
         4 . A process for the production of an organometallic compound comprising (i) reacting in a first pot a nitrogen-containing compound with an alkali metal, or an alkali metal-containing compound, or an alkaline earth metal, or an alkaline earth metal-containing compound, in the presence of a solvent and under reaction conditions sufficient to produce a first reaction mixture comprising a base material, (ii) adding said base material to a second pot containing a metal source compound and optionally an amine compound, (iii) reacting in said second pot said base material with said metal source compound and optionally said amine compound under reaction conditions sufficient to produce a second reaction mixture comprising an organometallic compound derivative, (iv) subjecting said second reaction mixture to reduction or dehalogenation under conditions sufficient produce a third reaction mixture comprising said organometallic compound, and (v) separating said organometallic compound from said third reaction mixture; wherein said organometallic compound is represented by the formula :M(NR′ 1 R′ 2 ) q  wherein M is a metal or metalloid, R′ 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R′ 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group; when q is a value of 2 or greater, R′ 1  or R′ 2  of one (NR′ 1 R′ 2 ) group can be combined with R′ 1  or R′ 2  of another (NR′ 1 R′ 2 ) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; q is a value equal to or less than the oxidation state of M, and : represents 2 electrons. 
     
     
         5 . The process of  claim 4  wherein the metal source compound comprises tetrachlorosilane, tetrabromosilane, hafnium tetrachloride, bis(dimethylamino)dichlorosilane, bis(diethylamino)dichlorosilane, bis(diethylamino)silane, (N,N′-di-tert-butylethene-1,2-diamino)dichlorosilane, (N,N′-di-tert-butylethylene-1,2-diamino)dichlorosilane, (N,N′-diisopropylethene-1,2-diamino)dichlorosilane, bis(di-tert-butylamino)dichlorosilane, or bis(di-tert-amylamino)dichlorosilane; the base material comprises lithium di-tert-butylamide, lithium di-tert-amylamide, lithium N,N′-di-tert-butylethylene-1,2-diamide, lithium N,N′-diisopropylethene-1,2-diamide, or lithium N,N′-di-tert-butylethene-1,2-diamide; and the amine compound comprises di-tert-butylamine, di-tert-amylamine, N,N′-di-tert-butylethylene-1,2-diamine, N,N′-diisopropylethene-1,2-diamine, or N,N′-di-tert-butylethene-1,2-diamine. 
     
     
         6 . The process of  claim 4  wherein said organometallic compound is represented by the formula :Si(NR′ 1 R′ 2 ) 2  wherein R′ 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R′ 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group; R′ 1  or R′ 2  of one (NR′ 1 R′ 2 ) group can be combined with R′ 1  or R′ 2  of another (NR′ 1 R′ 2 ) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; and : represents 2 electrons. 
     
     
         7 . A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula H a M(NR 1 R 2 ) x (NR 3 H) y (NH 2 ) z  wherein M is a metal or metalloid, R 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 3  is the same or different and is a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, thereby producing the film, coating or powder. 
     
     
         8 . The method of  claim 7  wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated. 
     
     
         9 . The method of  claim 7  wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate. 
     
     
         10 . The method of  claim 9  wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material. 
     
     
         11 . The method of  claim 9  wherein said substrate is a patterned wafer. 
     
     
         12 . The method of  claim 7  wherein said film, coating or powder is produced by a chemical vapor deposition or atomic layer deposition. 
     
     
         13 . The method of  claim 7  wherein said organometallic precursor compound is represented by the formula H a Si(NR 1 R 2 ) x (NR 3 H) y (NH 2 ) z  wherein R 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R 3  is the same or different and is a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z=4, provided that at least one of y and z is a value of at least 1, thereby producing the film, coating or powder. 
     
     
         14 . A method for producing a film, coating or powder by decomposing an organometallic precursor compound represented by the formula :M(NR′ 1 R′ 2 ) q  wherein M is a metal or metalloid, R′ 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R′ 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group; when a is a value of 2 or greater, R′ 1  or R′ 2  of one (NR′ 1 R′ 2 ) group can be combined with R′ 1  or R′ 2  of another (NR′ 1 R′ 2 ) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; a is a value equal to or less than the oxidation state of M, and : represents 2 electrons, thereby producing the film, coating or powder. 
     
     
         15 . The method of  claim 14  wherein the decomposing of said organometallic precursor compound is thermal, chemical, photochemical or plasma-activated. 
     
     
         16 . The method of  claim 14  wherein said organometallic precursor compound is vaporized and the vapor is directed into a deposition reactor housing a substrate. 
     
     
         17 . The method of  claim 16  wherein said substrate is comprised of a material selected from the group consisting of a metal, a metal silicide, a semiconductor, an insulator and a barrier material. 
     
     
         18 . The method of  claim 16  wherein said substrate is a patterned wafer. 
     
     
         19 . The method of  claim 14  wherein said film, coating or powder is produced by a chemical vapor deposition or atomic layer deposition. 
     
     
         20 . The method of  claim 14  wherein said organometallic precursor compound is represented by the formula :Si(NR′ 1 R′ 2 ) 2  wherein R′ 1  is the same or different and is a hydrocarbon group or a heteroatom-containing group, R′ 2  is the same or different and is a hydrocarbon group or a heteroatom-containing group; R′ 1  or R′ 2  of one (NR′ 1 R′ 2 ) group can be combined with R′ 1  or R′ 2  of another (NR′ 1 R′ 2 ) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; and : represents 2 electrons, thereby producing the film, coating or powder.