US2013058007A1PendingUtilityA1

Method for forming a capacitor dielectric and method for manufacturing a capacitor using the capacitor dielectric

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Assignee: PARK JONG-BUMPriority: Jun 29, 2006Filed: Sep 4, 2012Published: Mar 7, 2013
Est. expiryJun 29, 2026(expired)· nominal 20-yr term from priority
Inventors:Jong-Bum Park
H10P 14/69397H10P 14/69395H10P 14/69394H10P 14/6339H10P 14/662H10P 95/00H10P 14/69393H10P 14/6529C23C 16/405H10D 1/694H10D 1/68H10D 84/00H01G 4/33H01G 4/1245C23C 16/45525Y10T29/435Y10T29/43H10B 12/00
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Claims

Abstract

A method for forming a capacitor dielectric includes depositing a zirconium oxide layer, performing a post-treatment on the zirconium oxide layer such that the zirconium oxide layer has a tetragonal phase, and depositing a tantalum oxide layer over the zirconium oxide layer such that the tantalum oxide layer has a tetragonal phase.

Claims

exact text as granted — not AI-modified
1 .- 24 . (canceled) 
     
     
         25 . A method for manufacturing a capacitor, the method comprising:
 forming a lower electrode over a substrate;   forming a capacitor dielectric over the lower electrode, wherein the capacitor dielectric includes a zirconium oxide layer having a tetragonal phase and a tantalum oxide layer having a tetragonal phase; and   forming an upper electrode over the capacitor dielectric.   
     
     
         26 . The method of  claim 25 , wherein forming the capacitor dielectric comprises:
 depositing a zirconium oxide layer;   performing a post-treatment on the zirconium oxide layer such that the zirconium oxide layer has a tetragonal phase; and   depositing a tantalum oxide layer over the zirconium oxide layer such that the tantalum oxide layer has a tetragonal phase.   
     
     
         27 . The method of  claim 25 , wherein forming the capacitor dielectric comprises:
 depositing a tantalum oxide layer;   performing a post-treatment on the tantalum oxide layer such that the tantalum oxide layer has a tetragonal phase; and   depositing a zirconium oxide layer over the tantalum oxide layer such that the zirconium oxide layer has a tetragonal phase.   
     
     
         28 . The method of  claim 26 , wherein the post-treatment includes a use of ozone. 
     
     
         29 . The method of  claim 26 , wherein the post-treatment includes use of oxygen, wherein the treatment is performed at a temperature of approximately 300° C. to approximately 500° C., in an environment with an oxygen concentration of approximately 180 g/m 3  to approximately 300 g/m 3 . 
     
     
         30 . The method of  claim 26 , wherein depositing the zirconium oxide layer and depositing the tantalum oxide layer are performed using an atomic layer deposition process. 
     
     
         31 . The method of  claim 30 , wherein the atomic layer deposition process of the zirconium oxide layer is performed by repeating a unit deposition cycle until the zirconium oxide layer has a thickness of approximately 40 Å to approximately 100 Å, the unit deposition cycle comprising introducing a zirconium source, introducing a first purge gas, introducing a reactant, and introducing a second purge gas. 
     
     
         32 . The method of  claim 31 , wherein the zirconium source uses a precursor selected from a group consisting of: Zr[NC 2 H 5 CH 3 ] 4 ], Zr[OC(CH 3 ) 2 CH 2 OCH 3 ] 4 , Zr[OC(CH 3 ) 3 ] 4 , ZrCl 4  and ZrI 4 , and further wherein the zirconium source flows for approximately 0.1 to 10 seconds. 
     
     
         33 . The method of  claim 30 , wherein the atomic layer deposition process of the tantalum oxide layer is performed by repeating a unit deposition cycle until the tantalum oxide layer has a thickness of approximately 20 Å to approximately 100 Å, the unit deposition cycle comprising: introducing a tantalum source, introducing a first purge gas, introducing a reactant, and introducing a second purge gas. 
     
     
         34 . The method of  claim 33 , wherein the tantalum source uses a precursor of tantalum chloride, and further wherein the tantalum source flows for approximately 0.1 to 10 seconds. 
     
     
         35 . The method of  claim 30 , wherein depositing the zirconium oxide layer and depositing the tantalum oxide layer are performed at a temperature range of approximately 250° C. to approximately 350° C. and under a pressure of approximately 0.1 torr to approximately 10 torr. 
     
     
         36 . The method of  claim 26 , wherein the depositing-a-tantalum-oxide-layer step, the performing-a-post-treatment step, and the depositing-a-zirconium-oxide-layer step are performed in situ. 
     
     
         37 . The method of  claim 27 , wherein depositing the zirconium oxide layer and depositing the tantalum oxide layer are performed using an atomic layer deposition process. 
     
     
         38 . The method of  claim 37 , wherein the atomic layer deposition process of the zirconium oxide layer is performed by repeating a unit deposition cycle until the zirconium oxide layer has a thickness of approximately 40 Å to approximately 100 Å, the unit deposition process comprising: introducing a zirconium source, introducing a first purge gas, introducing a reactant, and introducing a second purge gas. 
     
     
         39 . The method of  claim 38 , wherein the zirconium source uses a precursor selected from a group consisting of: Zr[NC 2 H 5 CH 3 ] 4 ], Zr[OC(CH 3 ) 2 CH 2 OCH 3 ] 4 , Zr[OC(CH 3 ) 3 ] 4 , ZrCl 4  and ZrI 4 , and further wherein the zirconium source flows for approximately 0.1 to 10 seconds. 
     
     
         40 . The method of  claim 37 , wherein the atomic layer deposition process of the tantalum oxide layer is performed by repeating a unit deposition cycle until the tantalum oxide layer has a thickness of approximately 20 Å to approximately 100 Å, the unit deposition cycle comprising: introducing a tantalum source, introducing a first purge gas, introducing a reactant, and introducing a second purge gas. 
     
     
         41 . The method of  claim 40 , wherein the tantalum source uses a precursor of tantalum chloride, and further wherein the tantalum source flows for approximately 0.1 to 10 seconds. 
     
     
         42 . The method of  claim 37 , wherein depositing the zirconium oxide layer and depositing the tantalum oxide layer are performed at a temperature of approximately 250° C. to approximately 350° C. and under a pressure of approximately 0.1 torr to approximately 10 torr. 
     
     
         43 . The method of  claim 37 , wherein the depositing-a-tantalum-oxide-layer step, the performing-a-post-treatment step, and the depositing-a-zirconium-oxide-layer step are performed in situ. 
     
     
         44 . A capacitor comprising:
 a lower electrode;   a capacitor dielectric formed over the lower electrode, wherein the capacitor dielectric includes a zirconium oxide layer having a tetragonal phase and a tantalum oxide layer having a tetragonal phase; and   an upper electrode formed over the capacitor dielectric.

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