Optoelectronic device having conductive substrate

Abstract

An optoelectronic device includes a conductive substrate; a polymer filled groove configured to separate the conductive substrate into a first semiconductor substrate and a second semiconductor substrate; a first front side electrode on the first semiconductor substrate and a second front side electrode on the second semiconductor substrate; and a light emitting diode (LED) chip on the first semiconductor substrate in electrical communication with the first front side electrode and with the second front side electrode.

What is claimed is: 
     
         1 . An optoelectronic device comprising:
 a conductive substrate having a front side and a back side;   at least one at least one polymer filled groove extending from edge to edge and from the first side to the second side configured to separate the conductive substrate into a first semiconductor substrate and a second semiconductor substrate;   a first front side electrode on the first semiconductor substrate and a second front side electrode on the second semiconductor substrate; and   a light emitting diode (LED) chip on the first semiconductor substrate in electrical communication with the first front side electrode and with the second front side electrode.   
     
     
         2 . The optoelectronic device of  claim 1  further comprising a first back side electrode on the first semiconductor substrate and a second back side electrode on the second semiconductor substrate. 
     
     
         3 . The optoelectronic device of  claim 1  wherein the light emitting diode (LED) chip is in electrical contact with the first front side electrode and is wire bonded to the second front side electrode. 
     
     
         4 . The optoelectronic device of  claim 1  wherein the second semiconductor substrate comprises at least one integrated semiconductor device. 
     
     
         5 . The optoelectronic device of  claim 1  wherein the second semiconductor substrate comprises at least one zener diode semiconductor device. 
     
     
         6 . The optoelectronic device of  claim 1  further comprising a fluorescent material containing layer on the light emitting diode (LED) chip. 
     
     
         7 . The optoelectronic device of  claim 1  further comprising an encapsulating dome on the light emitting diode (LED) chip. 
     
     
         8 . The optoelectronic device of  claim 1  wherein the first semiconductor substrate is configured to provide an electrical path and a thermal path from the light emitting diode (LED) chip. 
     
     
         9 . An optoelectronic device comprising:
 a conductive substrate having a front side and a back side;   a pair of polymer filled grooves extending from edge to edge and from the first side to the second side configured to separate the conductive substrate into a first semiconductor substrate, a second semiconductor substrate and a third semiconductor substrate;   a first front side electrode in electrical contact with the first semiconductor substrate and with the second semiconductor substrate, and a second front side electrode in electrical contact with the third semiconductor substrate;   a light emitting diode (LED) chip on the second semiconductor substrate in electrical contact with the first front side electrode and in electrical communication with the second front side electrode; and   a first back side electrode on the first semiconductor substrate in electrical communication with the first front side electrode, and a second back side electrode on the third semiconductor substrate in electrical communication with the second front side electrode.   
     
     
         10 . The optoelectronic device of  claim 9  wherein the light emitting diode (LED) chip is wire bonded to the second front side electrode. 
     
     
         11 . The optoelectronic device of  claim 9  wherein the third semiconductor substrate comprises at least one integrated semiconductor device. 
     
     
         12 . The optoelectronic device of  claim 9  wherein the third semiconductor substrate comprises at least one integrated zener diode semiconductor device. 
     
     
         13 . The optoelectronic device of  claim 9  further comprising a fluorescent material containing layer on the light emitting diode (LED) chip. 
     
     
         14 . The optoelectronic device of  claim 9  further comprising an encapsulating dome on the light emitting diode (LED) chip. 
     
     
         15 . The optoelectronic device of  claim 9  wherein the first semiconductor substrate and the third semiconductor substrate are configured to provide an electrical path from the light emitting diode (LED) chip, and the second semiconductor substrate is configured to provide a thermal path from the light emitting diode (LED) chip. 
     
     
         16 . The optoelectronic device of  claim 9  further comprising a surface mounted protective device in electrical contact with the first front side electrode and in electrical communication with the second front side electrode. 
     
     
         17 . The optoelectronic device of  claim 9  further comprising a third back side electrode on the second semiconductor substrate separated there from by an electrically insulating layer.