System for fabricating silicon carbide assemblies

Abstract

A system for fabricating silicon carbide assemblies that includes at least two silicon carbide materials; at least one joining interlayer positioned between the at least two silicon carbide materials, wherein the at least one joining interlayer further includes a first material that melts at a first temperature and a second material interspersed throughout the first material, and wherein the second material melts at a temperature that is lower than that of the first material; and at least one apparatus for applying energy to the joining interlayer, wherein applying energy to the joining interlayer is operative to soften the first material and melt the second material, and wherein softening the first material and melting the second material is operative to transform the joining interlayer into a substantially porosity-free adherent material capable of joining together the at least two silicon carbide materials.

What is claimed: 
     
         1 ) A system for fabricating assemblies, comprising:
 (a) at least two components for forming an assembly, wherein the at least two components further include ceramic, metal, or composite, and wherein the assembly further includes ceramic and metal; metal and metal; composite and metal; or composite and composite;   (b) at least one joining interlayer positioned between the at least two components, wherein the at least one joining interlayer further includes a first material that melts at a first temperature and a second material interspersed throughout the first material, and wherein the second material melts at a second temperature that is lower than that of the first material; and   (c) at least one apparatus for applying energy to the joining interlayer, wherein applying energy to the joining interlayer is operative to soften the first material and melt the second material, and wherein softening the first material and melting the second material is operative to transform the joining interlayer into a substantially porosity-free adherent material capable of joining together the at least two components.   
     
     
         2 ) The system of  claim 1 , wherein the joining interlayer further comprises aluminum and silicon. 
     
     
         3 ) The system of  claim 1 , wherein the joining interlayer further comprises a multi-phase hypereutectic Al−80 wt % Si alloy. 
     
     
         4 ) The system of  claim 1 , wherein the joining interlayer further comprises a high-temperature metal layer sandwiched between two multiphase alloy joining layers. 
     
     
         5 ) The system of  claim 1 , wherein the high-temperature metal layer sandwiched between two multiphase alloy joining layers further includes titanium, zirconium, molybdenum, niobium, or combinations thereof 
     
     
         6 ) The system of  claim 1 , wherein the at least one apparatus for applying energy to the joining interlayer is a furnace. 
     
     
         7 ) The system of  claim 1 , wherein the at least one apparatus for applying energy to the joining interlayer is a laser. 
     
     
         8 ) The system of  claim 1 , wherein the at least one apparatus for applying energy to the joining interlayer creates heat at temperatures between about 725° C. and about 1450° C. 
     
     
         9 ) A system for fabricating silicon carbide assemblies, comprising:
 (a) at least two silicon carbide materials;   (b) at least one joining interlayer positioned between the at least two silicon carbide materials, wherein the at least one joining interlayer further includes a first material that melts at a first temperature and a second material interspersed throughout the first material, and wherein the second material melts at a second temperature that is lower than that of the first material; and   (c) at least one apparatus for heating the joining interlayer to a predetermined temperature, wherein heating the joining interlayer to the predetermined temperature is operative to soften the first material and melt the second material, and wherein softening the first material and melting the second material is operative to transform the joining interlayer into a substantially porosity-free adherent material capable of joining together the at least two silicon carbide materials.   
     
     
         10 ) The system of  claim 9 , wherein the joining interlayer further comprises aluminum and silicon. 
     
     
         11 ) The system of  claim 9 , wherein the joining interlayer further comprises a multi-phase hypereutectic Al−80 wt % Si alloy. 
     
     
         12 ) The system of  claim 9 , wherein the joining interlayer further comprises a high-temperature metal layer sandwiched between two multiphase alloy joining layers. 
     
     
         13 ) The system of  claim 12 , wherein the high-temperature metal layer sandwiched between two multiphase alloy joining layers further includes titanium, zirconium, molybdenum, niobium, or combinations thereof. 
     
     
         14 ) The system of  claim 9 , wherein the at least one apparatus for heating the joining interlayer is a furnace. 
     
     
         15 ) The system of  claim 9 , wherein the at least one apparatus for heating the joining interlayer is a laser. 
     
     
         16 ) The system of  claim 9 , wherein the at least one apparatus heating the joining interlayer creates heat at temperatures between about 725° C. and about 1450° C. 
     
     
         17 ) A system for fabricating silicon carbide assemblies, comprising:
 (a) at least two silicon carbide materials;   (b) at least one hypereutectic aluminum-silicon alloy joining interlayer positioned between the at least two silicon carbide materials, wherein the silicon melts at a first temperature, and wherein the aluminum melts at a second temperature that is lower than that of the silicon; and   (c) at least one apparatus for heating the joining interlayer to a predetermined temperature, wherein heating the joining interlayer to the predetermined temperature is operative to soften the silicon and melt the aluminum, and wherein softening the silicon and melting the aluminum is operative to transform the joining interlayer into a substantially porosity-free adherent material capable of joining together the at least two silicon carbide materials.   
     
     
         18 ) The system of  claim 17 , wherein the at least one apparatus for heating the joining interlayer is a furnace. 
     
     
         19 ) The system of  claim 17 , wherein the at least one apparatus for heating the joining interlayer is a laser. 
     
     
         20 ) The system of  claim 17 , wherein the at least one apparatus heating the joining interlayer creates heat at temperatures between about 725° C. and about 1450° C.