US2013078759A1PendingUtilityA1

Composition for forming n-type diffusion layer, method of forming n-type diffusion layer, and method of producing photovoltaic cell

Assignee: MACHII YOICHIPriority: Apr 23, 2010Filed: Apr 22, 2011Published: Mar 28, 2013
Est. expiryApr 23, 2030(~3.7 yrs left)· nominal 20-yr term from priority
H10P 32/171H10P 32/141H10P 32/19H10F 71/00H10F 71/121H10F 10/14H10F 77/70H10F 77/211H10F 77/1223C03C 8/18H10P 32/14C03C 3/097Y02E10/547Y02P70/50H01L 21/04H01L 31/18
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Claims

Abstract

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Claims

exact text as granted — not AI-modified
1 . A composition for forming an n-type diffusion layer, the composition comprising a glass powder and a dispersion medium, wherein the glass powder includes a donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. 
     
     
         2 . The composition for forming an n-type diffusion layer according to  claim 1 , wherein the donor element is at least one selected from phosphorous (P) or antimony (Sb). 
     
     
         3 . The composition for forming an n-type diffusion layer according to  claim 1 , wherein the glass powder comprises at least one donor element-containing material selected from P 2 O 3 , P 2 O 5  or Sb 2 O 3 , and at least one glass component material selected from SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2  or MoO 3 . 
     
     
         4 . The composition for forming an n-type diffusion layer according to  claim 1 , further comprising a metal element that is crystallized upon reacting with the glass powder. 
     
     
         5 . The composition for forming an n-type diffusion layer according to  claim 4 , wherein the metal element that is crystallized upon reacting with the glass powder is at least one selected from silver (Ag), silicon (Si) or zinc (Zn). 
     
     
         6 . The composition for forming an n-type diffusion layer according to  claim 1 , wherein the life time killer element is at least one selected from iron (Fe), copper (Cu), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W) or gold (Au). 
     
     
         7 . A method of forming an n-type diffusion layer, the method comprising:
 applying the composition for forming an n-type diffusion layer of  claim 1 ; and   conducting a thermal diffusion treatment.   
     
     
         8 . A method of producing a photovoltaic cell, the method comprising:
 applying, on a semiconductor substrate, the composition for forming an n-type diffusion layer of  claim 1 ;   conducting a thermal diffusion treatment to form an n-type diffusion layer; and   forming an electrode on the n-type diffusion layer.

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