Method for manufacturing semiconductor apparatus

Abstract

A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; and forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices.

1 . A method for manufacturing a semiconductor apparatus comprising:
 forming a protrusion made of a conductor on each of electrodes of a first face of a plurality of a semiconductor devices, the semiconductor devices being provided on a top face of a semiconductor wafer;   making trenches on the top face, each of the trenches being disposed between the plurality of semiconductor devices;   filling an insulator into a gap between the protrusions and into the trench to form a sealing member;   grinding a bottom face of the semiconductor wafer opposing the top face;   forming a first lead made of a conductor on each of the protrusions;   forming a second lead on each of a second face of the plurality of semiconductor devices opposing the first face; and   cutting the sealing member.   
     
     
         2 . The method according to  claim 1 , wherein the forming of the protrusion includes forming the protrusion by plating. 
     
     
         3 . The method according to  claim 1 , wherein at least one of
 the forming of the first lead includes forming the first lead by plating and   the forming of the second lead includes forming the second lead by plating.   
     
     
         4 . The method according to  claim 3 , wherein at least one of
 the cutting the sealing member includes cutting collectively the first lead with the sealing member, the first lead continuing over the plurality of semiconductor devices, and   the cutting the sealing member includes cutting collectively the second lead with the sealing member, the second lead continuing over the plurality of semiconductor devices.   
     
     
         5 . The method according to  claim 1 , wherein at least one of
 the forming of the first lead includes adhering a conductive sheet onto the first face of the semiconductor device to form the first lead, and   the forming of the second lead includes adhering a conducting sheet onto the second face of the semiconductor device to form the second lead.   
     
     
         6 . The method according to  claim 5 , wherein the cutting of the sealing member includes collectively cutting the conductive sheet with the sealing member. 
     
     
         7 . The method according to  claim 1 , wherein at least one of the first lead and the second lead is formed of copper. 
     
     
         8 . The method according to  claim 1 , further comprising forming a plating layer on a surface of at least one of the first lead and the second lead. 
     
     
         9 . The method according to  claim 8 , wherein the plating layer includes at least one of a nickel layer, a tin layer, and a stacked film having a nickel layer and a tin layer. 
     
     
         10 . A method for manufacturing a semiconductor apparatus,
 the apparatus including:
 a semiconductor device including
 a first face and a second face opposing each other, and 
 an electrode provided on the first face; 
 
 a first external electrode opposing the first face of the semiconductor device, the first external electrode including
 a first major surface substantially parallel to the first face, 
 a first side face substantially perpendicular to the first major surface, and 
 a protrusion protruding in a direction perpendicular to the first major surface to connect to the electrode; 
 
 a second external electrode opposing the second face of the semiconductor device, the second external electrode including
 a second major surface substantially parallel to the second face, 
 a second side face substantially perpendicular to the second major surface, and 
 an opposite face on a side opposite to the second major surface, the opposite face being substantially the same size as the second major surface; and 
 
 an insulator covering the semiconductor device and the protrusion of the first external electrode, 
 the first side face and the second side face being mounting faces, the semiconductor device being disposed between the first external electrode and the second external electrode, 
   the method comprising:
 forming the protrusion made of a conductor on each of the electrodes of the first face provided on a semiconductor wafer top face side of a plurality of the semiconductor devices formed in a semiconductor wafer; 
 covering the protrusion on the top face side of the semiconductor wafer with an insulator to form a first sealing member; 
 making a trench between the plurality of semiconductor devices from the bottom face side of the semiconductor wafer to reach partway through the first sealing member to separate each of the plurality of semiconductor devices; 
 filling an insulator into the trench to form a second sealing member; 
 grinding the first sealing member to expose the protrusion; 
 forming a first lead made of a conductor on the protrusion, the first lead forming a portion of the first external electrode; 
 forming a conductive material layer directly to form a second lead on the bottom face of each of the plurality of semiconductor devices, the second lead forming the second external electrode; and 
 cutting the first and second sealing members between the plurality of semiconductor devices to separate the plurality of semiconductor devices from each other, the second lead being formed on the bottom face of the plurality of semiconductor devices. 
   
     
     
         11 . The method according to  claim 10 , wherein the forming of the protrusion includes forming the protrusion by plating. 
     
     
         12 . The method according to  claim 10 , comprising at least one selected from
 the forming of the first lead including forming the first lead by plating and   the forming of the second lead including forming the second lead by plating.   
     
     
         13 . The method according to  claim 10 , wherein at least one selected from the first lead and the second lead is formed of copper. 
     
     
         14 . The method according to  claim 10 , further comprising forming a plating layer on a surface of at least one selected from the first lead and the second lead. 
     
     
         15 . The method according to  claim 14 , wherein the plating layer includes at least one selected from a nickel layer, a tin layer, and a stacked film having a nickel layer and a tin layer. 
     
     
         16 . A method for manufacturing a semiconductor apparatus,
 the apparatus including:
 a semiconductor device including
 a first face and a second face opposing each other, and 
 an electrode provided on the first face; 
 
 a first external electrode opposing the first face of the semiconductor device, the first external electrode including
 a first major surface substantially parallel to the first face, 
 a first side face substantially perpendicular to the first major surface, and 
 a protrusion protruding in a direction perpendicular to the first major surface to connect to the electrode; 
 
 a second external electrode opposing the second face of the semiconductor device, the second external electrode including
 a second major surface substantially parallel to the second face, 
 a second side face substantially perpendicular to the second major surface, and 
 an opposite face on a side opposite to the second major surface, the opposite face being substantially the same size as the second major surface; and 
 
 an insulator covering the semiconductor device and the protrusion of the first external electrode, 
 the first side face and the second side face being mounting faces, the semiconductor device being disposed between the first external electrode and the second external electrode, 
   the method comprising:
 forming a second sealing member on a bottom face side on a side opposite to a semiconductor wafer top face of a plurality of the semiconductor devices formed on the top face of the semiconductor wafer; 
 making a trench between the plurality of semiconductor devices from the top face of the semiconductor wafer to reach partway through the second sealing member to separate each of the plurality of semiconductor devices; 
 filling an insulator into the trench on the top face side of the semiconductor wafer to cover the electrode with the insulator to form a first sealing member; 
 making an opening in the first sealing member to reach the electrode of the first face on the top face side of each of the plurality of semiconductor devices; 
 forming a conductive material layer directly to form a second lead on the bottom face, the second lead forming the second external electrode; 
 filling a conductive material into the opening of the first sealing member to form the protrusion connected to the electrode; 
 forming a first lead electrically connected to the protrusion, the first lead forming a portion of the first external electrode; and 
 cutting the first sealing member to separate the plurality of semiconductor devices from each other, the plurality of semiconductor devices being connected to the first lead. 
   
     
     
         17 . The method according to  claim 16 , further comprising
 forming an electrode on the second face of each of the plurality of the semiconductor devices, the electrode forming a portion of each of the plurality of the semiconductor devices,   the forming of the second lead including forming the conductive material layer directly on the electrode formed on the second face of each of the plurality of the semiconductor devices to form the second lead.   
     
     
         18 . The method according to  claim 17 , further comprising
 grinding the second sealing member prior to the making of the opening to expose the electrode provided on the second face from the second sealing member,   the forming of the electrode on the second face being implemented prior to the forming of the second sealing member.   
     
     
         19 . The method according to  claim 16 , wherein the forming of the protrusion includes
 forming a seed layer on the electrode provided on the first face exposed by the opening, and   forming a resist on a surface of the first sealing member around the opening and filling the conductive material into an interior of the opening on the seed layer by electroplating in a region excluding the resist.   
     
     
         20 . The method according to  claim 16 , wherein the forming of the first lead includes forming a resist on a surface of the first sealing member around the opening and forming a conductive material layer in contact with the protrusion by electroplating in a region excluding the resist.