Organic light emitting diode display and manufacturing method thereof

Abstract

The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the thin film transistor and including a pixel electrode, an organic emission layer, and a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. The semiconductor layer is formed of a polycrystalline silicon layer where remnants and contaminants at the surface thereof are reduced or eliminated through an atmospheric pressure plasma treatment.

What is claimed is: 
     
         1 . An organic light emitting diode (OLED) display comprising:
 a substrate;   a thin film transistor on the substrate and comprising:
 a semiconductor layer; 
 a gate electrode; 
 a source electrode; and 
 a drain electrode; and 
   an organic light emitting element coupled to the thin film transistor and comprising:
 a pixel electrode; 
 an organic emission layer; and 
 a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. 
   
     
     
         2 . The OLED display of  claim 1 , wherein the polycrystalline silicon layer is formed by crystallizing an amorphous silicon layer using one of solid phase crystallization, sequential lateral solidification crystallization, excimer laser annealing, metal conductive crystallization, or metal conductive lateral crystallization. 
     
     
         3 . The OLED display of  claim 1 , wherein a native oxide at the surface of the polycrystalline silicon layer is reduced or eliminated through a first portion of the atmospheric pressure plasma treatment using a plasmatized fluorine-containing gas. 
     
     
         4 . The OLED display of  claim 3 , wherein the polycrystalline silicon layer is formed by crystallizing an amorphous silicon layer using one of solid phase crystallization, sequential lateral solidification crystallization, excimer laser annealing, metal conductive crystallization, or metal conductive lateral crystallization. 
     
     
         5 . The OLED display of  claim 3 , wherein organic and metal contaminants at the surface of the polycrystalline silicon layer are reduced or eliminated through a second portion of the atmospheric pressure plasma treatment using a plasmatized oxygen-containing gas, the second portion of the atmospheric pressure plasma treatment occurring after the first portion of the atmospheric pressure plasma treatment. 
     
     
         6 . The OLED display of  claim 5 , wherein the polycrystalline silicon layer is formed by crystallizing an amorphous silicon layer using one of solid phase crystallization, sequential lateral solidification crystallization, excimer laser annealing, metal conductive crystallization, or metal conductive lateral crystallization.