Nitrogen Reactive Sputtering of Cu-In-Ga-N for Solar Cells

Abstract

Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.

What is claimed: 
     
         1 . A method of combinatorially processing a substrate, the method comprising:
 forming a Cu—In—Ga material above a substrate, wherein a composition of the material is varied in a combinatorial manner.   
     
     
         2 . The method of  claim 1  wherein the combinatorial processing is accomplished in a site isolated manner. 
     
     
         3 . The method of  claim 1  further comprising incorporating nitrogen into the material composition to form a Cu—In—Ga—N material and wherein a concentration of nitrogen is varied in a combinatorial manner. 
     
     
         4 . The method of  claim 3  wherein the Cu—In—Ga—N material is formed using a PVD process in a nitrogen containing atmosphere. 
     
     
         5 . The method of  claim 4  wherein at least one of process parameters comprising material composition, Ar/N-species ratio, pressure, power, or target to substrate spacing are varied in a combinatorial manner. 
     
     
         6 . The method of  claim 4  wherein the nitrogen containing atmosphere is N 2  or NH 3 .