Silicon device structure, and sputtering target used for forming the same

Abstract

There is provided a silicon device structure, comprising: a P-doped n + type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n + type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.

What is claimed is: 
     
         1 . A sputtering target material made of copper alloy that contains only Mn, P, and Cu, wherein in the copper alloy, a concentration of Mn is 1 atom % or more and 5 atom % or less, a concentration of P is 0.05 atom % or more and 1.0 atom % or less, and the remaining except for Mn and P is Cu. 
     
     
         2 . A sputtering target material made of copper alloy that contains only Mn, P, and Cu, wherein in the copper alloy, a concentration of Mn is 1 atom % or more and 5 atom % or less, a concentration of P is 0.1 atom % or more and 1.0 atom % or less, and the remaining except for Mn and P is Cu. 
     
     
         3 . A sputtering target material made of copper alloy that contains only Mn, P, and Cu, wherein in the copper alloy, a concentration of Mn is 2 atom % or more and 5 atom % or less, a concentration of P is 0.05 atom % or more and 1.0 atom % or less, and the remaining except for Mn and P is Cu. 
     
     
         4 . The sputtering target material according to  claim 1 , wherein the copper alloy is prepared by melting and alloying Mn, P and Cu by using a casting method. 
     
     
         5 . The sputtering target material according to  claim 2 , wherein the copper alloy is prepared by melting and alloying Mn, P and Cu by using a casting method. 
     
     
         6 . The sputtering target material according to  claim 3 , wherein the copper alloy is prepared by melting and alloying Mn, P and Cu by using a casting method.