US2013134375A1PendingUtilityA1

SEMICONDUCTOR DEVICE STRUCTURES COMPRISING CRYSTALLINE Pr1-xCaxMnO3 (PCMO) MATERIAL AND METHODS OF FORMING CRYSTALLINE PCMO MATERIAL

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Assignee: SRINIVASAN BHASKARPriority: Nov 10, 2010Filed: Dec 31, 2012Published: May 30, 2013
Est. expiryNov 10, 2030(~4.3 yrs left)· nominal 20-yr term from priority
Inventors:Bhaskar SrinivasanGurtej S. Sandhu
H10P 14/00H10D 62/81H10N 70/021H10N 70/20H10N 70/8836H10N 70/826H01L 29/12H01L 21/02104
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Claims

Abstract

A method of forming a crystalline Pr 1-x Ca x MnO 3 (PCMO) material includes forming an amorphous PCMO material, crystallizing the amorphous PCMO material, and removing a portion of the crystalline PCMO material. A semiconductor structure including the crystalline PCMO material is also disclosed where the crystalline PCMO material has a thickness of less than about 50 nm. A method of forming a semiconductor device structure is also disclosed.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device structure, comprising:
 a crystalline Pr 1-x Ca x MnO 3  (PCMO) material on a substrate, the crystalline PCMO material formed by a process comprising:   forming an amorphous Pr 1-x Ca x MnO 3  (PCMO) material on a substrate, wherein x is a number from about 0.05 to about 0.95;   crystallizing the amorphous PCMO material; and   removing a portion of the crystalline PCMO material such that a thickness of the crystalline PCMO material is less than about 50 nm.   
     
     
         2 . The semiconductor device structure of  claim 1 . further comprising at least one of an electrode, a through-wafer interconnect, a line, a trace, a wire, and a via in or on the substrate. 
     
     
         3 . The semiconductor device structure of  claim 1 , wherein the crystalline PCMO material comprises a thickness of between about 5 nm and about 35 nm. 
     
     
         4 . The semiconductor device structure of  claim 1 , wherein the crystalline PCMO material comprises Pr 0.7 Ca 0.3 MnO 3 , Pr 0.5 Ca 0.5 MnO 3 , or Pr 0.67 Ca 0.33 MnO 3 . 
     
     
         5 . The semiconductor device structure of  claim 1 , wherein crystallizing the amorphous PCMO material comprises heating the amorphous PCMO material to a temperature of between about 400° C. and about 500° C. 
     
     
         6 . The semiconductor device structure of  claim 1 , wherein the crystalline PCMO material comprises a thickness of about 10 nm. 
     
     
         7 . The semiconductor device structure of  claim 1 , wherein the crystalline PCMO material comprises a layer of PCMO material. 
     
     
         8 . The semiconductor device structure of  claim 1 , wherein the crystalline PCMO material comprises the crystalline PCMO material in trenches in the substrate. 
     
     
         9 . The semiconductor device structure of  claim 1 , wherein the crystalline PCMO material comprises a continuous portion of the crystalline PCMO material over the substrate. 
     
     
         10 . The semiconductor device structure of  claim 1 , further comprising:
 a first electrode disposed within the substrate; and   a second electrode formed over the crystalline PCMO material.   
     
     
         11 . The semiconductor device structure of  claim 10 , further comprising an oxide material disposed between the crystalline PCMO material and at least one of the first electrode and the second electrode. 
     
     
         12 . A method of forming a crystalline Pr 1-x Ca x MnO 3  (PCMO) material, comprising:
 forming an amorphous Pr 1-x Ca x MnO 3  (PCMO) material having a first thickness, wherein x is a number from about 0.05 to about 0.95;   heating the amorphous PCMO material to form a crystalline PCMO material; and   removing a portion of the crystalline PCMO material to leave a crystalline PCMO material having a second thickness, the second thickness smaller than the first thickness.   
     
     
         13 . The method of  claim 12 , wherein forming an amorphous Pr 1-x Ca x MnO 3  (PCMO) material having a first thickness comprises forming the amorphous PCMO material in at least one trench in a substrate. 
     
     
         14 . The method of  claim 12 , wherein heating the amorphous PCMO material to form a crystalline PCMO material comprises heating the amorphous PCMO material to a temperature of between about 400° C. and about 600° C. 
     
     
         15 . The method of  claim 12 , wherein heating the amorphous PCMO material to form a crystalline PCMO material comprises heating the amorphous PCMO material in a non-oxidizing environment. 
     
     
         16 . The method of  claim 12 , wherein heating the amorphous PCMO material to form a crystalline PCMO material comprises heating the amorphous PCMO material for a period of from about 3 minutes to about 60 minutes. 
     
     
         17 . The method of  claim 12 , wherein removing a portion of the crystalline PCMO material comprises removing a continuous horizontal portion of the crystalline PCMO material. 
     
     
         18 . The method of  claim 12 , wherein removing a portion of the crystalline PCMO material comprises exposing the crystalline PCMO material to an isotropic etch process. 
     
     
         19 . The method of  claim 12 , wherein removing a portion of the crystalline PCMO material comprises exposing the crystalline PCMO material to an abrasive planarization process. 
     
     
         20 . A method of forming a crystalline Pr 1-x Ca x MnO 3  (PCMO) material, comprising:
 forming an amorphous Pr 1-x Ca x MnO 3  (PCMO) material having a first thickness over a substrate, wherein x is a number from about 0.05 to about 0.95;   heating the amorphous PCMO material in a non-oxidizing environment to a temperature of at least about 400° C. to form a crystalline PCMO material; and   removing a continuous horizontal portion of the crystalline PCMO material to leave a crystalline PCMO material having a second thickness over the substrate, the second thickness smaller than the first thickness.

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