US2013143405A1PendingUtilityA1

Silicon wafer processing solution and silicon wafer processing method

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Assignee: KITAMURA TOMOHIKOPriority: Aug 24, 2010Filed: Aug 23, 2011Published: Jun 6, 2013
Est. expiryAug 24, 2030(~4.1 yrs left)· nominal 20-yr term from priority
H10P 90/129H10P 52/403H10P 52/402C10N 2030/06C10N 2040/00B23D 61/185C10M 173/02C09K 3/1409C10M 133/42G03F 7/021C10M 133/38C10M 133/46G03F 7/00C10M 2215/224C10M 133/44C10M 2215/222C10M 133/22B28D 5/0076C10M 2215/223C10M 2207/022G03F 7/028H01L 21/30625
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Claims

Abstract

A silicon-wafer processing fluid used for processing a silicon wafer contains a friction modifier containing a nitrogen-containing compound, pH of the nitrogen-containing compound being in a range from 2 to 8 when a mass ratio with water (i.e. nitrogen-containing compound/water) is 1/99. The nitrogen-containing compound is preferably a heterocyclic compound. The silicon-wafer processing fluid restrains an abrasion of abrasive grains rigidly attached to a wire and generation of hydrogen.

Claims

exact text as granted — not AI-modified
1 . A silicon-wafer processing fluid, comprising:
 a friction modifier comprising a nitrogen-comprising compound; and   water,   wherein a pH of the nitrogen-comprising compound is from 2 to 8 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99.   
     
     
         2 . The silicon-wafer processing fluid according to  claim 1 , wherein the nitrogen-comprising compound is a heterocyclic compound. 
     
     
         3 . The silicon-wafer processing fluid according to  claim 2 , wherein the heterocyclic compound is selected from the group consisting of benzotriazole, 3,4-dihydro-3-hydroxy-4-oxo-1,2,3-benzotriazine, indazole, benzimidazole, and derivatives thereof. 
     
     
         4 . The silicon-wafer processing fluid according to  claim 1 , wherein a pH of the silicon-wafer processing fluid is from 3 to 9. 
     
     
         5 . The silicon-wafer processing fluid according to  claim 1 , wherein a content of the nitrogen-comprising compound in the silicon-wafer processing fluid is from 0.05 mass % to 10 mass %, based on a total amount of the silicon-wafer processing fluid. 
     
     
         6 . The silicon-wafer processing fluid according to  claim 1 , wherein a content of the water in the silicon wafer processing fluid is from 50 mass % to 99.95 mass %, based on a total amount of the silicon-wafer processing fluid. 
     
     
         7 . A silicon-wafer processing method, the method comprising:
 contacting the silicon-wafer processing fluid according to  claim 1  with a silicon-wafer comprising a wire on which abrasive grains are rigidly attached.   
     
     
         8 . A silicon-wafer processing method, the method comprising:
 contacting a silicon-wafer processing fluid comprising a friction modifier comprising a nitrogen-comprising compound and water; and   processing a silicon-wafer comprising a wire on which abrasive grains are rigidly attached,   wherein a pH of the nitrogen-comprising compound is from 2 to 8 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99.   
     
     
         9 . The silicon-wafer processing fluid according to  claim 1 , wherein the pH of the nitrogen-comprising compound is from 3 to 7 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99. 
     
     
         10 . The silicon-wafer processing fluid according to  claim 1 , wherein the pH of the nitrogen-comprising compound is from 4 to 6 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99. 
     
     
         11 . The silicon-wafer processing fluid according to  claim 2 , wherein the heterocyclic compound is benzotriazole. 
     
     
         12 . The silicon-wafer processing fluid according to  claim 2 , wherein the heterocyclic compound is 3,4-dihydro-3-hydroxy-4-oxo-1,2,3-benzotriazine. 
     
     
         13 . The silicon-wafer processing fluid according to  claim 4 , wherein the pH of the silicon-wafer processing fluid is from 5 to 7. 
     
     
         14 . The silicon-wafer processing fluid according to  claim 5 , wherein the content of the nitrogen-comprising compound in the silicon-wafer processing fluid is from 0.1 mass % to 5 mass %, based on a total amount of the silicon-wafer processing fluid. 
     
     
         15 . The silicon-wafer processing fluid according to  claim 6 , wherein the content of the water in the silicon-wafer processing fluid is from 60 mass % to 95 mass %, based on a total amount of the silicon-wafer processing fluid.

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