US2013143405A1PendingUtilityA1
Silicon wafer processing solution and silicon wafer processing method
Est. expiryAug 24, 2030(~4.1 yrs left)· nominal 20-yr term from priority
Inventors:Tomohiko Kitamura
H10P 90/129H10P 52/403H10P 52/402C10N 2030/06C10N 2040/00B23D 61/185C10M 173/02C09K 3/1409C10M 133/42G03F 7/021C10M 133/38C10M 133/46G03F 7/00C10M 2215/224C10M 133/44C10M 2215/222C10M 133/22B28D 5/0076C10M 2215/223C10M 2207/022G03F 7/028H01L 21/30625
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Claims
Abstract
A silicon-wafer processing fluid used for processing a silicon wafer contains a friction modifier containing a nitrogen-containing compound, pH of the nitrogen-containing compound being in a range from 2 to 8 when a mass ratio with water (i.e. nitrogen-containing compound/water) is 1/99. The nitrogen-containing compound is preferably a heterocyclic compound. The silicon-wafer processing fluid restrains an abrasion of abrasive grains rigidly attached to a wire and generation of hydrogen.
Claims
exact text as granted — not AI-modified1 . A silicon-wafer processing fluid, comprising:
a friction modifier comprising a nitrogen-comprising compound; and water, wherein a pH of the nitrogen-comprising compound is from 2 to 8 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99.
2 . The silicon-wafer processing fluid according to claim 1 , wherein the nitrogen-comprising compound is a heterocyclic compound.
3 . The silicon-wafer processing fluid according to claim 2 , wherein the heterocyclic compound is selected from the group consisting of benzotriazole, 3,4-dihydro-3-hydroxy-4-oxo-1,2,3-benzotriazine, indazole, benzimidazole, and derivatives thereof.
4 . The silicon-wafer processing fluid according to claim 1 , wherein a pH of the silicon-wafer processing fluid is from 3 to 9.
5 . The silicon-wafer processing fluid according to claim 1 , wherein a content of the nitrogen-comprising compound in the silicon-wafer processing fluid is from 0.05 mass % to 10 mass %, based on a total amount of the silicon-wafer processing fluid.
6 . The silicon-wafer processing fluid according to claim 1 , wherein a content of the water in the silicon wafer processing fluid is from 50 mass % to 99.95 mass %, based on a total amount of the silicon-wafer processing fluid.
7 . A silicon-wafer processing method, the method comprising:
contacting the silicon-wafer processing fluid according to claim 1 with a silicon-wafer comprising a wire on which abrasive grains are rigidly attached.
8 . A silicon-wafer processing method, the method comprising:
contacting a silicon-wafer processing fluid comprising a friction modifier comprising a nitrogen-comprising compound and water; and processing a silicon-wafer comprising a wire on which abrasive grains are rigidly attached, wherein a pH of the nitrogen-comprising compound is from 2 to 8 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99.
9 . The silicon-wafer processing fluid according to claim 1 , wherein the pH of the nitrogen-comprising compound is from 3 to 7 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99.
10 . The silicon-wafer processing fluid according to claim 1 , wherein the pH of the nitrogen-comprising compound is from 4 to 6 when a mass ratio of the nitrogen-comprising compound to water is from 1 to 99.
11 . The silicon-wafer processing fluid according to claim 2 , wherein the heterocyclic compound is benzotriazole.
12 . The silicon-wafer processing fluid according to claim 2 , wherein the heterocyclic compound is 3,4-dihydro-3-hydroxy-4-oxo-1,2,3-benzotriazine.
13 . The silicon-wafer processing fluid according to claim 4 , wherein the pH of the silicon-wafer processing fluid is from 5 to 7.
14 . The silicon-wafer processing fluid according to claim 5 , wherein the content of the nitrogen-comprising compound in the silicon-wafer processing fluid is from 0.1 mass % to 5 mass %, based on a total amount of the silicon-wafer processing fluid.
15 . The silicon-wafer processing fluid according to claim 6 , wherein the content of the water in the silicon-wafer processing fluid is from 60 mass % to 95 mass %, based on a total amount of the silicon-wafer processing fluid.Cited by (0)
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