Gallium nitride-based led fabrication with pvd-formed aluminum nitride buffer layer

Abstract

Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

What is claimed is: 
     
         1 . A multi-chamber system, comprising:
 a physical vapor deposition (PVD) chamber having a target comprising aluminum; and   a chamber adapted to deposit un-doped or n-type gallium nitride, or both.   
     
     
         2 . The system of  claim 1 , wherein the target of the PVD chamber comprises aluminum nitride. 
     
     
         3 . The system of  claim 1 , wherein the chamber adapted to deposit un-doped or n-type gallium nitride comprises a metal-organic chemical vapor deposition (MOCVD) chamber. 
     
     
         4 . The system of  claim 1 , wherein the chamber adapted to deposit un-doped or n-type gallium nitride comprises a hydride vapor phase epitaxy (HVPE) chamber. 
     
     
         5 . The system of  claim 1 , wherein the PVD chamber and the chamber adapted to deposit un-doped or n-type gallium nitride are included in a cluster tool arrangement. 
     
     
         6 . The system of  claim 1 , wherein the PVD chamber and the chamber adapted to deposit un-doped or n-type gallium nitride are included in an in-line tool arrangement. 
     
     
         7 . The system of  claim 1 , further comprising:
 a rapid thermal processing (RTP) chamber or a laser annealing chamber.   
     
     
         8 . A multi-chamber system, comprising:
 a physical vapor deposition (PVD) chamber having a target comprising aluminum;   a first metal-organic chemical vapor deposition (MOCVD) chamber to deposit un-doped or n-type gallium nitride;   a second MOCVD chamber to deposit a multiple quantum well (MQW) structure; and   a third MOCVD chamber to deposit p-type aluminum gallium nitride or p-type gallium nitride, or both.   
     
     
         9 . The system of  claim 8 , wherein the PVD chamber having the aluminum nitride target is for non-reactive sputtering of aluminum nitride. 
     
     
         10 . The system of  claim 9 , wherein the PVD chamber is for non-reactive sputtering of aluminum nitride at a temperature approximately in the range of 20-200 degrees Celsius. 
     
     
         11 . The system of  claim 9 , wherein the PVD chamber is for non-reactive sputtering of aluminum nitride at a temperature approximately in the range of 200-1200 degrees Celsius. 
     
     
         12 . The system of  claim 8 , further comprising:
 a rapid thermal processing (RTP) chamber or a laser annealing chamber.   
     
     
         13 . The system of  claim 8 , further comprising:
 a second PVD chamber having a tungsten (W) target.