Diamond Semiconductor System and Method

Abstract

Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein at least 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm 2 /Vs to the diamond lattice at 100 kPa and 300K.

1 . A method of fabricating a monolithically integrated diamond semiconductor, the method including the steps of:
 seeding the surface of a substrate material;   forming a diamond layer upon the surface of the substrate material; and   forming a semiconductor layer within the diamond layer,   wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein at least 0.16% of the donor atoms contribute conduction electrons with mobility greater than 770 cm 2 /Vs to the diamond lattice at 100 kPa and 300K.   
     
     
         2 . The method of fabricating a monolithically integrated diamond semiconductor of  claim 1 , wherein the substrate material is selected from the group consisting of silicon, silicon oxide, refractory metal, glass, and wide band gap semiconductor material. 
     
     
         3 . The method of fabricating a monolithically integrated diamond semiconductor of  claim 1 , wherein the diamond layer is formed using chemical vapor deposition. 
     
     
         4 . The method of fabricating a monolithically integrated diamond semiconductor of  claim 1 , wherein the diamond layer is formed at or below 450 degrees Celsius. 
     
     
         5 . A monolithically integrated diamond semiconductor device formed according to the method of  claim 1 . 
     
     
         6 . The monolithically integrated diamond semiconductor device of  claim 5 , wherein the device is one of a group consisting of an LED, an attenuator, an amplifier, a switch, and a sensor. 
     
     
         7 . The monolithically integrated diamond semiconductor device of  claim 5 , wherein the device includes logic elements. 
     
     
         8 . The monolithically integrated diamond semiconductor device of  claim 7 , wherein the device is one of a group consisting of a transistor and a diode. 
     
     
         9 . (canceled)