Extremely Low Resistance Compositions and Methods for Creating Same

Abstract

The invention pertains to creating new extremely low resistance (“ELR”) materials, which may include high temperature superconducting (“HTS”) materials. In some implementations of the invention, an ELR material may be modified by depositing a layer of modifying material unto the ELR material to form a modified ELR material. The modified ELR material has improved operational characteristics over the ELR material alone. Such operational characteristics may include operating at increased temperatures or carrying additional electrical charge or other operational characteristics. In some implementations of the invention, the ELR material is a cuprate-perovskite, such as, but not limited to BSSCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

What is claimed is: 
     
         1 . A composition comprising:
 a first layer comprising BSSCO; and   a second layer comprising a modifying material, wherein the modifying material of the second layer is bonded to the BSSCO of the first layer, wherein the modifying material comprises an element selected from the group consisting of: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, and silver.   
     
     
         2 . The composition of  claim 1 , wherein the modifying material of the second layer is bonded to a face of the BSSCO of the first layer, wherein the face is not substantially perpendicular to a c-axis of the BSSCO. 
     
     
         3 . The composition of  claim 1 , wherein the modifying material of the second layer is bonded to a face of the BSSCO of the first layer, wherein the face is substantially perpendicular to any line in an “a-b” face of the BSSCO. 
     
     
         4 . The composition of  claim 1 , wherein the modifying material of the second layer is bonded to a face of the BSSCO of the first layer, wherein the face is substantially perpendicular to a b-axis of the BSSCO. 
     
     
         5 . The composition of  claim 1 , wherein the modifying material of the second layer is bonded to a face of the BSSCO of the first layer, wherein the face is substantially perpendicular to an a-axis of the BSSCO. 
     
     
         6 . The composition of  claim 1 , wherein the modifying material of the second layer is bonded to a face of the BSSCO of the first layer, wherein the face is substantially parallel to the c-axis. 
     
     
         7 . The composition of  claim 1 , wherein the composition has improved operating characteristics over those of BSSCO. 
     
     
         8 . The composition of  claim 1 , wherein the composition operates at a higher temperature than that of BSSCO. 
     
     
         9 . The composition of  claim 8 , wherein the composition demonstrates extremely low resistance at a higher temperature than that of BSSCO. 
     
     
         10 . The composition of  claim 8 , wherein the composition transitions from a non-ELR state to a ELR state at a temperature higher than that of BSSCO. 
     
     
         11 . The composition of  claim 1 , wherein the composition has a transition temperature greater than that of BSSCO. 
     
     
         12 . The composition of  claim 8 , wherein the composition operates at a temperature greater than any one of the following temperatures: 100K, 150K, 200K, 250K, or 300K. 
     
     
         13 . The composition of  claim 1 , wherein the composition carries a greater amount of current in an ELR state than that carried by BSSCO in its ELR state. 
     
     
         14 . The composition of  claim 1 , wherein the second layer is deposited onto the first layer. 
     
     
         15 . The composition of  claim 1 , wherein the first layer is deposited onto the second layer. 
     
     
         16 . The composition of  claim 1 , wherein the BSSCO of the first layer is formed on the second layer. 
     
     
         17 . A method comprising:
 bonding a modifying material to a face of BSSCO, wherein the modifying material comprises an element selected from the group consisting of: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, and silver.   
     
     
         18 . The method of  claim 17 , wherein the face of the BSSCO is not substantially perpendicular to a c-axis of the BSSCO. 
     
     
         19 . The method of  claim 17 , wherein bonding a modifying material to a face of BSSCO comprises depositing the modifying material onto the BSSCO. 
     
     
         20 . The method of  claim 17 , wherein bonding a modifying material to a face of BSSCO comprises forming the BSSCO on the modifying material. 
     
     
         21 . The method of  claim 17 , wherein bonding a modifying material to a face of BSSCO comprises bonding a first layer comprising the modifying material to a second layer comprising the BSSCO. 
     
     
         22 . A composition comprising:
 a first layer comprising BSSCO; and   a second layer comprising a modifying material, wherein the modifying material of the second layer is bonded to the BSSCO of the first layer, wherein the modifying material is a conductive material that bonds easily with oxygen.   
     
     
         23 . The composition of  claim 22 , wherein the modifying material is an element selected from the group consisting of: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, and silver. 
     
     
         24 . A method comprising:
 bonding a modifying material to a face of an HTS perovskite material, wherein the HTS perovskite is BSSCO, wherein the modifying material comprises an element selected from the group consisting of: chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, and silver.   
     
     
         25 . A composition comprising:
 a first layer comprising an extremely low resistance material, wherein the extremely low resistance material is BSSCO;   a second layer comprising a modifying material, wherein the second layer is bonded to the first layer;   a third layer comprising the extremely low resistance material; and   a fourth layer of the modifying material, wherein the third layer is bonded to the fourth layer.