US2013199445A1PendingUtilityA1

Vapor deposition device, vapor deposition method, and method for producing organic electroluminescence display device

52
Assignee: SONODA TOHRUPriority: Oct 19, 2010Filed: Oct 12, 2011Published: Aug 8, 2013
Est. expiryOct 19, 2030(~4.3 yrs left)· nominal 20-yr term from priority
H10K 59/12H10K 71/166C23C 14/042H05B 33/10C23C 14/50C23C 14/12C23C 14/24C23C 16/042H10K 59/35H10K 59/1201H10K 71/164H10K 71/00
52
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A vapor deposition device ( 50 ) disclosed, a partition wall ( 26 ) standing between film formation regions on a film formation substrate ( 200 ), includes: a mask unit ( 80 ) including a shadow mask ( 81 ) and a vapor deposition source ( 85 ) fixed in position relative to each other; contacting means for bringing the film formation substrate ( 200 ) and the shadow mask ( 81 ) into contact with each other at the partition wall ( 26 ); and moving means for moving at least a first one of the mask unit ( 80 ) and the film formation substrate ( 200 ) relative to a second one thereof in a state in which the contact caused by the contacting means is kept.

Claims

exact text as granted — not AI-modified
1 . (canceled) 
     
     
         2 . A vapor deposition device for forming, on a film formation substrate on which the film is to be formed, a film having a predetermined pattern, the film formation substrate having a partition wall that has a predetermined height and that stands between film formation regions on the film formation substrate,
 the vapor deposition device comprising:   a mask unit provided so as to face the film formation substrate and so as to include:
 a vapor deposition mask that has an opening and that is smaller in area than a vapor deposition region of the film formation substrate, wherein the vapor deposition mask includes an engaging section for engaging with the partition wall; and 
 a vapor deposition source that has an emission hole for emitting a vapor deposition particle, the emission hole being provided so as to face the vapor deposition mask, 
 the vapor deposition mask and the vapor deposition source being fixed in position relative to each other; 
 contacting means for bringing the film formation substrate and the vapor deposition mask into contact with each other at the partition wall; and 
 moving means for moving at least a first one of the mask unit and the film formation substrate relative to a second one thereof in a state in which the vapor deposition mask and the film formation substrate are in contact with each other at the partition wall. 
   
     
     
         3 . The vapor deposition device according to  claim 2 ,
 wherein:   the partition wall has a cross section in a protruding shape; and   the engaging section has a cross section in a depressed shape.   
     
     
         4 . The vapor deposition device according to  claim 2 ,
 wherein:   the partition wall has a cross section in a depressed shape; and   the engaging section has a cross section in a protruding shape.   
     
     
         5 . The vapor deposition device according to  claim 3 ,
 wherein:   the wall surface of the partition wall is in a reverse tapered shape; and   the wall surface of the engaging section is in a reverse tapered shape toward the film formation substrate.   
     
     
         6 . The vapor deposition device according to  claim 3 ,
 wherein:   the wall surface of the partition wall is in a forward tapered shape; and   the wall surface of the engaging section is in a forward tapered shape toward the film formation substrate.   
     
     
         7 . The vapor deposition device according to  claim 2 ,
 wherein:   the partition wall is provided in a stripe shape along a direction in which the moving means moves the at least the first one of the mask unit and the film formation substrate relative to the second one thereof.   
     
     
         8 . The vapor deposition device according to  claim 7 ,
 wherein:   the partition wall includes a plurality of discontinuous partition walls.   
     
     
         9 . The vapor deposition device according to  claim 8 ,
 wherein:   the partition wall is provided in such a pattern that no straight line passing through a discontinuous portion of the partition wall passes over a pixel light-emitting region of the film formation substrate.   
     
     
         10 . The vapor deposition device according to  claim 2 ,
 wherein:   the contacting means is a magnet provided on a first surface of the film formation substrate, the first surface being opposite to a second surface of the film formation substrate which second surface faces the vapor deposition mask.   
     
     
         11 . The vapor deposition device according to  claim 10 ,
 wherein:   the magnet is provided at such a position as to correspond to the vapor deposition mask.   
     
     
         12 . The vapor deposition device according to  claim 10  or  11 ,
 wherein: 
 the magnet has a controllable magnetic force. 
 
     
     
         13 . The vapor deposition device according to  claim 12 ,
 wherein:   the magnet includes a plurality of magnets provided along a first direction in which the moving means moves the at least the first one of the mask unit and the film formation substrate relative to the second one thereof; and   the magnets each have a stripe shape extending in a second direction that is perpendicular to the first direction and that is parallel to the film formation substrate.   
     
     
         14 . The vapor deposition device according to  claim 13 ,
 wherein:   the magnetic force of said magnet is so controlled as to be applied in a case where the film formation substrate is present between the magnet and the vapor deposition mask.   
     
     
         15 . The vapor deposition device according to  claim 10 ,
 wherein:   the magnet has, on a surface in contact with the film formation substrate, a contact area reducing structure for reducing an area of contact with the film formation substrate.   
     
     
         16 . The vapor deposition device according to  claim 2 ,
 wherein:   the contacting means is an electrostatic chuck that is in contact with a first surface of the film formation substrate, the first surface being opposite to a second surface of the film formation substrate which second surface faces the vapor deposition mask, and that holds the film formation substrate.   
     
     
         17 . The vapor deposition device according to  claim 16 ,
 wherein:   the electrostatic chuck has, on a surface in contact with the film formation substrate, a contact area reducing structure for reducing an area of contact with the film formation substrate.   
     
     
         18 . The vapor deposition device according to  claim 15 ,
 wherein:   the contact area reducing structure is a hemispheric protruding structure.   
     
     
         19 . The vapor deposition device according to  claim 2 ,
 wherein:   the vapor deposition mask is a rectangular vapor deposition mask that has (i) along a short-axis direction thereof, a side shorter than a width of the vapor deposition region along a side facing the short-axis direction of the vapor deposition mask and that has (ii) along a long-axis direction thereof, a side longer than a width of the vapor deposition region along a side facing the long-axis direction of the vapor deposition mask.   
     
     
         20 . The vapor deposition device according to  claim 2 , further comprising:
 a first alignment marker on the film formation substrate;   a second alignment marker on the vapor deposition mask; and   position detecting means for carrying out an alignment between the film formation substrate and the vapor deposition mask with use of the first and second alignment markers.   
     
     
         21 . The vapor deposition device according to  claim 2 ,
 wherein:   the mask unit is provided so that the emission hole faces the opening of the vapor deposition mask in a one-to-one correspondence.   
     
     
         22 . The vapor deposition device according to  claim 2 ,
 wherein:   the predetermined pattern is an organic layer for an organic electroluminescent device.   
     
     
         23 - 28 . (canceled) 
     
     
         29 . The vapor deposition device according to  claim 17 ,
 wherein:   the contact area reducing structure is a hemispheric protruding structure.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.