Semiconductor light-emitting device having a photonic crystal pattern formed thereon, and method for manufacturing same

Abstract

The present invention relates to a semiconductor light-emitting device having a two-stage photonic crystal pattern formed thereon, and to a method for manufacturing same. According to the present invention, a second photonic crystal pattern is formed inside a first photonic crystal pattern formed on a semiconductor layer or transparent electrode layer, in order to improve light extraction efficiency. Also, according to the present invention, in order to form a second fine nanoscale photonic crystal pattern in the first photonic crystal pattern, a nanosphere lithography process employing polymer beads is used, and a trapping layer made of a thermoplastic resin was used to conveniently form polymer beads in a single layer so as to eliminate the inconvenience of having to calculate and change process variables according to polymer bead sizes in traditional nanosphere lithography processes.

1 - 15 . (canceled) 
     
     
         16 . A semiconductor light-emitting device, comprising:
 a semiconductor substrate;   a first semiconductor layer formed on the semiconductor substrate;   an activation layer formed on the first semiconductor layer, and configured to generate light;   a second semiconductor layer formed on the activation layer, having a first photonic crystal pattern formed thereon, and having a second photonic crystal pattern formed in the first photonic crystal pattern; and   a transparent electrode layer formed on the second semiconductor layer.   
     
     
         17 . The semiconductor light-emitting device of  claim 16 , wherein the first photonic crystal pattern has a concavo-convex section configured as an upper surface and a concaved portion, and
 wherein the second photonic crystal pattern is respectively formed on the upper surface and on a lower surface of the concaved portion, and has a concavo-convex section.   
     
     
         18 . The semiconductor light-emitting device of  claim 17 , wherein the second photonic crystal pattern has a concavo-convex section, by a plurality of protrusions having a cylindrical shape and bottom surfaces, each bottom surface formed between the protrusions. 
     
     
         19 . The semiconductor light-emitting device of  claim 17 , wherein the concaved portion of the first photonic crystal pattern has a quadrangular plane. 
     
     
         20 . A semiconductor light-emitting device, comprising:
 a semiconductor substrate;   a first semiconductor layer formed on the semiconductor substrate;   an activation layer formed on the first semiconductor layer, and configured to generate light;   a second semiconductor layer formed on the activation layer; and   a transparent electrode layer formed on the second semiconductor layer, having a first photonic crystal pattern formed thereon, and having a second photonic crystal pattern formed in the first photonic crystal pattern.   
     
     
         21 . The semiconductor light-emitting device of  claim 20 , wherein the first photonic crystal pattern has a concavo-convex section configured as an upper surface and a concaved portion, and
 wherein the second photonic crystal pattern is respectively formed on the upper surface and on a lower surface of the concaved portion, and has a concavo-convex section.   
     
     
         22 . The semiconductor light-emitting device of  claim 21 , wherein the second photonic crystal pattern has a concavo-convex section, by a plurality of protrusions having a cylindrical shape and bottom surfaces, each bottom surface formed between the protrusions. 
     
     
         23 . The semiconductor light-emitting device of  claim 21 , wherein the concaved portion of the first photonic crystal pattern has a quadrangular plane. 
     
     
         24 . A method for manufacturing a semiconductor light-emitting device, comprising:
 (a) sequentially forming, on a semiconductor substrate, a first semiconductor layer, an activation layer and a second semiconductor layer;   (b) forming, on the surface of the second semiconductor layer, a first photonic crystal pattern so as to have a concavo-convex section, and forming a second photonic crystal pattern in the first photonic crystal pattern; and   (c) forming a transparent electrode layer on the second semiconductor layer.   
     
     
         25 . The method of  claim 24 , wherein the step (b) includes:
 (b1) forming a plurality of concave portions on the surface of the second semiconductor layer, thereby forming the first photonic crystal pattern; and   (b2) forming a second photonic crystal pattern having a concavo-convex section, on an upper surface of the second semiconductor layer between the concaved portions, and on a lower surface of the concaved portions, respectively.   
     
     
         26 . The method of  claim 25 , wherein in step (b2), polymer beads are arranged in a single layer, on the upper surface of the semiconductor layer where the first photonic crystal pattern has been formed, and on the lower surface of the concaved portions, then the size of the polymer beads is controlled, and then the second semiconductor layer is etched using the polymer beads as an etching mask, thereby forming the second photonic crystal pattern. 
     
     
         27 . The method of  claim 26 , wherein the step (b2) includes:
 (b2-1) forming a trapping layer, on the surface of the second semiconductor layer where the first photonic crystal pattern has been formed;   (b2-2) arranging the polymer beads on the trapping layer;   (b2-3) melting the trapping layer by applying heat to the semiconductor substrate, and immersing the polymer beads positioned on the trapping layer into the melted trapping layer;   (b2-4) cooling the semiconductor substrate thereby solidifying the trapping layer in a state where the polymer beads have been immersed in the trapping layer, and removing the polymer beads positioned on the trapping layer, thereby arranging the polymer beads on the second semiconductor layer in a single layer; and   (b2-5) removing the trapping layer, controlling the size of the polymer beads, and etching the second semiconductor layer using the size-controlled polymer beads as an etching mask, thereby forming the second photonic crystal pattern.   
     
     
         28 . The method of  claim 27 , wherein the trapping layer is formed of a thermoplastic resin. 
     
     
         29 . The method of  claim 27 , wherein in step (b2-1), the trapping layer is formed such that the thickness thereof is smaller than the diameter of the polymer beads. 
     
     
         30 . A method for manufacturing a semiconductor light-emitting device, comprising:
 (a) sequentially forming, on a semiconductor substrate, a first semiconductor layer, an activation layer, a second semiconductor layer, and a transparent electrode layer; and   (b) forming, on the surface of the transparent electrode layer, a first photonic crystal pattern so as to have a concavo-convex section, and forming a second photonic crystal pattern in the first photonic crystal pattern.   
     
     
         31 . The method of  claim 30 , wherein the step (b) includes:
 (b1) forming a plurality of concaved portions on the surface of the transparent electrode layer, thereby forming the first photonic crystal pattern; and   (b2) forming a second photonic crystal pattern having a concavo-convex section on an upper surface of the transparent electrode layer between the concaved portions, and on a lower surface of the concaved portions, respectively.   
     
     
         32 . The method of  claim 31 , wherein in step (b2), polymer beads are arranged in a single layer, on the upper surface of the transparent electrode layer where the first photonic crystal pattern has been formed, and on the lower surface of the concaved portions, then the size of the polymer beads is controlled, and then the transparent electrode layer is etched using the polymer beads as an etching mask, thereby forming the second photonic crystal pattern. 
     
     
         33 . The method of  claim 32 , wherein the step (b2) includes:
 (b2-1) forming a trapping layer, on the surface of the transparent electrode layer where the first photonic crystal pattern has been formed;   (b2-2) arranging the polymer beads on the trapping layer;   (b2-3) melting the trapping layer by applying heat to the semiconductor substrate, and immersing the polymer beads positioned on the trapping layer into the melted trapping layer;   (b2-4) cooling the semiconductor substrate thereby solidifying the trapping layer in a state where the polymer beads have been immersed in the trapping layer, and removing the polymer beads positioned on the trapping layer, thereby arranging the polymer beads on the transparent electrode layer in a single layer; and   (b2-5) removing the trapping layer, controlling the size of the polymer beads, and etching the transparent electrode layer using the size-controlled polymer beads as an etching mask, thereby forming the second photonic crystal pattern.   
     
     
         34 . The method of  claim 33 , wherein the trapping layer is formed of a thermoplastic resin. 
     
     
         35 . The method of  claim 33 , wherein in step (b2-1), the trapping layer is formed such that the thickness thereof is smaller than the diameter of the polymer beads.