Electrical element package

Abstract

Provided is an electrical element package, comprising an element substrate on which an electrical element is provided, a sealing substrate provided at a distance from a surface of the element substrate on a side of the electrical element so as to be opposed to the element substrate, and a glass frit for hermetically sealing a gap between the element substrate and the sealing substrate so as to surround the electrical element, wherein the electrical element package comprises a protective film for protecting an electrode from laser light applied in welding the glass frit, the protective film being provided between the element substrate and the glass frit.

1 . An electrical element package, comprising:
 an element substrate on which an electrical element is provided;   a sealing substrate provided at a distance from a surface of the element substrate on a side of the electrical element so as to be opposed to the element substrate; and   a glass frit for hermetically sealing a gap between the element substrate and the sealing substrate so as to surround the electrical element, wherein the electrical element package comprises a protective film for protecting an electrode from laser light applied in welding the glass frit, the protective film being provided between the element substrate and the glass frit.   
     
     
         2 . An electrical element package, comprising:
 an element substrate on which an electrical element is provided;   a sealing substrate provided at a distance from a surface of the element substrate on a side of the electrical element so as to be opposed to the element substrate; and   a glass frit for hermetically sealing a gap between the element substrate and the sealing substrate so as to surround the electrical element, wherein:   the electrical element package comprises a reflective film for reflecting laser light applied in welding the glass frit, the reflective film being provided between the element substrate and the glass frit; and   the reflective film is formed of a multilayer dielectric film obtained by alternately laminating a low-refractive index dielectric layer and a high-refractive index dielectric layer.   
     
     
         3 . The electrical element package according to  claim 2 , wherein the multilayer dielectric film is welded directly to the glass frit. 
     
     
         4 . The electrical element package according to  claim 2 , wherein the multilayer dielectric film is formed directly on an electrode connected to the electrical element. 
     
     
         5 . The electrical element package according to  claim 2 , wherein the low-refractive index dielectric layer has a refractive index of 1.6 or less, and the high-refractive index dielectric layer has a refractive index of 1.7 or more. 
     
     
         6 . The electrical element package according to  claim 2 , wherein the multilayer dielectric film has a reflectance of 50% or more to the laser light. 
     
     
         7 . The electrical element package according to  claim 2 , wherein the glass frit contains 80 to 99.7 mass % of inorganic powder comprising SnO-containing glass powder and 0.3 to 20 mass % of a pigment. 
     
     
         8 . The electrical element package according to  claim 7 , wherein the SnO-containing glass powder contains, as a glass composition in terms of mol %, 35 to 70% of SnO and 10 to 30% of P 2 O 5 . 
     
     
         9 . An electrical element package, comprising:
 an element substrate on which an electrical element is provided;   a sealing substrate provided at a distance from a surface of the element substrate on a side of the electrical element so as to be opposed to the element substrate; and   a glass frit for hermetically sealing a gap between the element substrate and the sealing substrate so as to surround the electrical element, wherein the electrical element package comprises a metal oxide film for protecting an electrode from laser light applied in welding the glass frit, the film being provided between the element substrate and the glass frit.   
     
     
         10 . The electrical element package according to  claim 9 , wherein the metal oxide film has a thickness of 10 to 500 nm. 
     
     
         11 . The electrical element package according to  claim 9 , wherein the metal oxide film comprises any one of SiO 2 , ZrO 2 , Y 2 O 3 , TiO 2 , Al 2 O 3 , Ta 2 O 5 , and Nb 2 O 5 . 
     
     
         12 . The electrical element package according to  claim 9 , wherein the metal oxide film is welded directly to the glass frit. 
     
     
         13 . The electrical element package according to  claim 9 , wherein the metal oxide film is formed directly on an electrode connected to the electrical element. 
     
     
         14 . The electrical element package according to  claim 9 , wherein the glass frit contains 80 to 99.5 mass % of inorganic powder comprising SnO-containing glass powder and 0.05 to 20 mass % of a pigment. 
     
     
         15 . The electrical element package according to  claim 14 , wherein the SnO-containing glass powder contains, as a glass composition in terms of mol %, 35 to 70% of SnO and 10 to 30% of P 2 O 5 .