Light emitting device with planar current block structure

Abstract

A light-emitting device comprises a support base having a planar surface, a semiconductor stacked structure disposed on the planar surface, the semiconductor stacked structure comprising a first semiconductor layer, an active layer, a second semiconductor layer, a current block region formed in one of the first semiconductor layer and the second semiconductor layer and physically contacts the planar surface and an electrode disposed on the semiconductor stacked structure.

1 . A light-emitting device, comprising:
 a support base having a planar surface;   a semiconductor stacked structure disposed on the planar surface, the semiconductor stacked structure comprising a first semiconductor layer, an active layer, a second semiconductor layer;   a current block region formed in one of the first semiconductor layer and the second semiconductor layer and physically contacts the planar surface; and   an electrode disposed on the semiconductor stacked structure.   
     
     
         2 . A light-emitting device according to  claim 1 , further comprising a plurality of the current block regions and a plurality of the electrodes, wherein each current block region corresponds to one of the electrode. 
     
     
         3 . A light-emitting device according to  claim 1 , wherein a width of the current block region is greater than a width of the electrode, and/or the shape of the current block region is the same as the shape the electrode. 
     
     
         4 . A light-emitting device according to  claim 3 , wherein the width of the at least one current block region is  5  times greater than the width of the electrode. 
     
     
         5 . A light-emitting device according to  claim 1 , wherein the current block region comprises a transparent and a low electrically conductive dielectric material. 
     
     
         6 . A light-emitting device according to  claim 1 , wherein the electrical conductivity of the current block region is less than one-tenth of the electrical conductivity of the semiconductor stacked structure. 
     
     
         7 . A light-emitting device according to  claim 1 , further comprising a transparent conductive layer between the semiconductor stacked structure and the electrode. 
     
     
         8 . A light-emitting device according to  claim 1 , wherein the support base comprises a reflective layer, a bonding layer, and a substrate. 
     
     
         9 . A light-emitting device according to  claim 8 , wherein the reflective layer comprises an electrically conductive and reflective material. 
     
     
         10 . A light-emitting device according to  claim 8 , wherein the bonding layer and the substrate are electrically conductive. 
     
     
         11 . A light-emitting device, comprising:
 a support base;   a plurality of light-emitting units on the support base; and   a conductive unit electrically connecting the plurality of light-emitting units, wherein each of the plurality of light-emitting unit comprises a semiconductor stacked structure, an electrode disposed on the semiconductor stacked structure, a reflective layer connecting the semiconductor stacked structure, and a current block region in the semiconductor stacked structure,   wherein the reflective layer has a planar surface, and the current block region contacts the planar surface,   wherein the electrode is aligned with the current block region.   
     
     
         12 . A light-emitting device according to  claim 11 , wherein a width of the current block region is greater than a width of the electrode, and/or the shape of the current block region is the same as the shape of the electrode. 
     
     
         13 . A light-emitting device according to  claim 12 , wherein the width of the at least one current block region is 5 times greater than the width of the electrode. 
     
     
         14 . A light-emitting device according to  claim 11 , wherein the current block region comprises a transparent and a low electrically conductive dielectric material. 
     
     
         15 . A light-emitting device according to  claim 11 , wherein the electrical conductivity of the current block region is less than one-tenth of the electrical conductivity of the semiconductor stacked structure. 
     
     
         16 . A light-emitting device according to  claim 11 , further comprising a transparent conductive layer between the semiconductor stacked structure and the electrode. 
     
     
         17 . A light-emitting device according to  claim 11 , wherein the reflective layer comprises an electrically conductive and reflective material. 
     
     
         18 . A light-emitting device according to  claim 11 , wherein the support base comprises a bonding layer, and a substrate. 
     
     
         19 . A light-emitting device according to  claim 18 , wherein the bonding layer is electrically conductive or electrically insulating. 
     
     
         20 . A method of manufacturing a light-emitting device comprising the steps of:
 providing a growth substrate;   growing a semiconductor stacked structure on the growth substrate, wherein the semiconductor stacked structure comprises an active layer, a first semiconductor layer on the active layer, and a second semiconductor layer under the active layer;   defining an alignment mark on the second semiconductor layer;   forming a current block region in the semiconductor stacked structure by oxygen plasma treatment, N 2 O plasma treatment, argon plasma treatment, ion implantation, or wet oxidation;   forming a reflective layer on the second semiconductor layer;   bonding a substrate to the reflective layer;   removing the growing substrate to expose the first semiconductor layer; and   forming an electrode on the first semiconductor layer,   wherein the electrode is aligned to the current block region by the alignment marks.