Nitride semiconductor light emitting device and method of manufacturing the same

Abstract

There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W. According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment. According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.

1 - 13 . (canceled) 
     
     
         14 . A nitride semiconductor light emitting device comprising:
 a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween;   n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and   an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of In and a second layer formed on the first layer and formed of a material containing W,   wherein the n-type ohmic contact layer is formed on a Ga-polar face of the n-type nitride semiconductor layer.   
     
     
         15 . The nitride semiconductor light emitting device of  claim 14 , wherein the second layer is formed of a W alloy. 
     
     
         16 . The nitride semiconductor light emitting device of  claim 15 , wherein an element contained in the W alloy comprises at least one element selected from the group consisting of Ti, Al, Cr, Ni, Pd, Pt, Mo, Co, Cu, Hf, and Mg. 
     
     
         17 . The nitride semiconductor light emitting device of  claim 14 , wherein the first layer has a thickness in the range of 10 to 300 Å. 
     
     
         18 . The nitride semiconductor light emitting device of  claim 14 , wherein the second layer has a thickness in the range of 100 to 4000 Å. 
     
     
         19 . The method of  claim 14 , wherein the first layer comprises a layer formed of single material of In.