Semiconductor Device Package with Slanting Structures

Abstract

A semiconductor device package structure includes a substrate with a via contact pad on top surface of the substrate, a terminal pad on bottom surface of the substrate and a conductive through hole through the substrate, wherein the conductive through hole electrically couples the via contact pad and the terminal pad on the substrate; a die having bonding pads thereon, wherein the die is formed on the top surface of the substrate; a slanting structure formed adjacent to at least one side of the die for carrying conductive traces; and a conductive trace formed on upper surface of the slanting structure to offer path between the bonding pads and the via contact pad.

What is claimed is: 
     
         1 . A semiconductor device package structure, comprising:
 a substrate with a via contact pad on a top surface of said substrate, a terminal pad on a bottom surface of said substrate and a conductive through hole through said substrate, wherein said conductive through hole is electrically coupled to said via contact pad and said terminal pad on said substrate;   a die having bonding pads thereon, wherein said die is formed on said top surface of said substrate;   a slanting structure formed adjacent to at least one side of said die for carrying conductive traces; and   a conductive trace formed on a upper surface of said slanting structure to offer electrical path between said bonding pads and said via contact pad.   
     
     
         2 . The structure of  claim 1 , further comprising a refilling material within said conductive through hole. 
     
     
         3 . The structure of  claim 2 , wherein said refilling material comprises aluminum, titanium, copper, nickel, silver or the combination thereof. 
     
     
         4 . The structure of  claim 2 , wherein said refilling material comprises Cu/Ni/Au. 
     
     
         5 . The structure of  claim 1 , further comprising an adhesive layer formed between backside surface of said die and said top surface of said substrate. 
     
     
         6 . The structure of  claim 5 , further comprising:
 a cavity formed from said bottom surface of said substrate to said top surface of said substrate; and   a contact structure formed along a surface of said cavity to contact said backside surface of said die.   
     
     
         7 . The structure of  claim 1 , further comprising a dielectric layer formed on upper surface of said die. 
     
     
         8 . The structure of  claim 7 , further comprising a cover layer formed on said dielectric layer, said conductive trace, said via contact pad and said substrate. 
     
     
         9 . The structure of  claim 1 , wherein material of said substrate comprises metal, glass, ceramic, silicon, plastic, bismaleimide triazine, FR4, FR5 or polyimide. 
     
     
         10 . The structure of  claim 1 , wherein material of said terminal pad comprises metal or alloy. 
     
     
         11 . A semiconductor device package structure, comprising:
 a substrate with via contact pads and via through holes through said substrate, terminal pads on a bottom surface of said substrate and an exposed type through hole through said substrate;
 a die having bonding pads thereon and an exposed type pad on a bottom surface of said die, wherein said exposed type pad is aligned with said exposed type through hole, wherein said die is formed on a top surface of said substrate; 
   a reflective layer formed on an upper surface of said substrate;   a slanting structure formed adjacent to at least one side of said die; and   a conductive trace formed on an upper surface of said slanting structure to offer electrical path between said bonding pads and said via contact pads;   wherein said slanting structure is configured for carrying said conductive trace.   
     
     
         12 . The structure of  claim 11 , further comprising a first refilling material within said via through holes to form conductive through holes, wherein said conductive through holes are electrically coupled to said via contact pads and said terminal pads on said substrate. 
     
     
         13 . The structure of  claim 12 , further comprising a second refilling material within said exposed type through hole to form a contact structure. 
     
     
         14 . The structure of  claim 13 , wherein said second refilling material comprises aluminum, titanium, copper, nickel, silver or the combination thereof. 
     
     
         15 . The structure of  claim 13 , further comprising an exposed type pad formed between a backside surface of said die and a top surface of said contact structure. 
     
     
         16 . The structure of  claim 15 , further comprising a second contact pad formed on a backside surface of said contact structure. 
     
     
         17 . The structure of  claim 11 , further comprising a dielectric layer formed on an upper surface of said die. 
     
     
         18 . The structure of  claim 17 , further comprising a cover layer formed on said dielectric layer, said conductive trace, said via contact pad and said substrate. 
     
     
         19 . The structure of  claim 17 , further comprising a lens with phosphor structure formed on said dielectric layer, said conductive trace, said via contact pad and said substrate. 
     
     
         20 . The structure of  claim 11 , wherein material of said substrate comprises metal, glass, ceramic, silicon, plastic, bismaleimide triazine, FR4, FR5 or polyimide.