US2013219111A1PendingUtilityA1

System and method for read-while-write with nand memory device

Assignee: SONY MOBILE COMM ABPriority: Jan 28, 2010Filed: Mar 21, 2013Published: Aug 22, 2013
Est. expiryJan 28, 2030(~3.5 yrs left)· nominal 20-yr term from priority
G06F 3/0613G06F 3/0679G06F 2212/7202G06F 3/0659G06F 12/0246
47
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Claims

Abstract

System, method, and program to perform simultaneous read and write operations in a NAND-type memory device, including: assigning a first partition in a NAND-type memory device, wherein the first partition is configured to perform read operations on high priority read content; assigning a second partition in the NAND-type memory device, wherein the second partition is configured to perform read operations and write operations, wherein the read operations are performed on non-high priority read content; and controlling the first partition and second partition to operate in a simultaneous manner.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for simultaneous read and write operations to be performed in a NAND-type memory device, the method comprising:
 assigning a first partition in a NAND-type memory device, wherein the first partition is configured to perform read operations on high priority read content;   assigning a second partition in the NAND-type memory device, wherein the second partition is configured to perform read operations and write operations, wherein the read operations are performed on non-high priority read content; and   controlling the first partition and second partition to operate in a simultaneous manner.   
     
     
         2 . The method of  claim 1 , wherein the step of controlling includes forming a first queue and a second queue from a primary queue, wherein the first queue executes read operations associated with the first partition and the second queue executes read and write operations associated with the second partition. 
     
     
         3 . The method of  claim 2 , wherein the first queue and the second queue are executed in parallel. 
     
     
         4 . The method of  claim 3 , wherein when additional content is required to be written to the first partition, a temporary write is made to the second partition to store the additional content. 
     
     
         5 . The method of  claim 3 , wherein when an associated host device requests writing additional content to the first partition, a temporary write is made to the second partition to store the additional content. 
     
     
         6 . The method of  claim 4  further comprising transferring the additional content to the first partition during an idle time associated with a system in which the NAND-type memory device is coupled. 
     
     
         7 . The method of  claim 1  further including assigning one or more additional partitions, wherein at least one of the additional partitions is configured to perform read operations and write operations. 
     
     
         8 . The method of  claim 7 , wherein the read and/or write operations performed by the one or more additional partitions are performed on non-high priority read content. 
     
     
         9 . The method of  claim 7  further including controlling the first partition, the second partition and the one or more additional partitions in parallel. 
     
     
         10 . The method of  claim 9 , wherein the step of controlling includes forming a first queue and a second queue and additional queues for each of the additional partitions from a primary queue, wherein the first queue executes read operations associated with the first partition and the second queue executes read operations and write operations associated with the second partition and each of the additional queues execute read operations and write operations associated with each of the one or more additional partitions. 
     
     
         11 . A non-volatile memory device comprising:
 a NAND-type memory chip including a first partition configured to perform read operations on high priority read content and a second partition configured to perform read operations and write operations, wherein the read operations are performed on non-high priority read content; and   a memory controller configured to control the first partition and second partition to operate in a simultaneous manner, such that the first partition may read high priority content when the second partition is reading or writing content.   
     
     
         12 . The non-volatile memory device of  claim 11 , wherein the memory controller includes a first queue for executing read operations associated with the first partition and a second queue for executing read and write operations associated with the second partition 
     
     
         13 . The non-volatile memory device of  claim 12 , wherein the first queue and the second queue are configure to be executed in parallel. 
     
     
         14 . The non-volatile memory device of  claim 13 , wherein when additional content is required to be written to the first partition, the memory controller is configured permits a temporary write to be made to the second partition to store the additional content. 
     
     
         15 . The non-volatile memory device of  claim 13 , wherein when an associated host device requests writing additional content to the first partition, a temporary write is made to the second partition to store the additional content. 
     
     
         16 . The non-volatile memory device of  claim 15 , wherein the memory controller transfers the additional content to the first partition during an idle time associated with a host device in which the NAND-type memory device is coupled. 
     
     
         17 . The non-volatile memory device of  claim 11  further including one or more additional partitions in the NAND-type memory device, wherein at least one of the additional partitions is configured to perform read operations and write operations. 
     
     
         18 . The non-volatile memory device of  claim 17 , wherein the memory controller is configured for controlling the first partition, the second partition and the one or more additional partitions in parallel. 
     
     
         19 . The non-volatile memory device of  claim 18 , wherein the memory controller includes a first queue for controlling execution of the first partition, a second queue for controlling execution of the second partition and additional queues for each additional partition contained on the NAND-type memory chip. 
     
     
         20 . A program for use in an electronic host device for controlling for simultaneous read and write operations to be performed in a NAND-type memory device, wherein the NAND-type memory includes a first partition and a second partition; and a memory controller configured to control the first partition and the second partition to execute in a simultaneous manner, wherein the first partition is a read only partition dedicated to high priority read content and second partition is a read and write partition, the program comprising executable logic to:
 place high priority read content on the first partition;   receiving a request for writing additional content on the first partition;   writing the additional content to the second partition; and   transferring the additional content to the first partition when a signal is received from the host electronic device to the memory control indicating that the host electronic device is in an idle state.

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