Overlapping contacts for semiconductor device

Abstract

A semiconductor device with overlapping contacts is provided. In one aspect, the semiconductor device includes a dielectric layer; a first contact located in the dielectric layer; and a second contact located in the dielectric layer adjacent to the first contact, wherein a portion of the second contact overlaps a top surface of the first contact.

1 . A semiconductor device with overlapping contacts comprises:
 a dielectric layer;   a first contact located in the dielectric layer; and   a second contact located in the dielectric layer adjacent to the first contact, wherein a portion of the second contact overlaps a top surface of the first contact.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the second contact completely covers the top surface of the first contact. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the first contact comprises a liner, the liner comprising a first outer liner layer located adjacent to the dielectric layer, a first inner liner layer located over the first outer liner layer, and a first contact fill metal located over the first inner liner layer; and
 wherein the second contact comprises a second outer liner layer, wherein a first portion of the second outer liner layer is located adjacent to the dielectric layer, and a second portion of the second outer liner layer is located adjacent to the first contact fill metal on the top surface of the first contact, a second inner liner layer located over the second outer liner layer, and a second contact fill metal located over the second inner liner layer.   
     
     
         4 . The semiconductor device of  claim 3 , wherein the first and second outer liner layers comprise titanium, the first and second inner liner layers comprises titanium nitride, and the first and second contact fill metal comprises tungsten. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the dielectric layer comprises one of an oxide and a nitride. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the dielectric layer comprises a top dielectric layer and a bottom dielectric layer, the top dielectric layer and the bottom dielectric layer comprising different dielectric materials. 
     
     
         7 . The semiconductor device of  claim 6 , wherein the second contact is located in the top dielectric layer and on top of the bottom dielectric layer.