Epitaxial structures on sides of a substrate

Abstract

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

What is claimed is: 
     
         1 - 12 . (canceled) 
     
     
         13 . A semiconductor device comprising a substrate, the substrate comprising a first epitaxial structure on a first side of the substrate and a second epitaxial structure on a second side of the substrate, each of the first and second epitaxial structures comprising an etch stop, an epitaxial layer, and a carrier medium, the first side being on an opposite side of the substrate from the second side. 
     
     
         14 . The semiconductor device of  claim 13 , wherein the first epitaxial structure comprises one or more laser cells. 
     
     
         15 . The semiconductor device of  claim 13 , wherein the first epitaxial structure comprises one or more light emitting diode cells. 
     
     
         16 . The semiconductor device of  claim 13 , wherein the first epitaxial structure comprises one or more infrared sensor cells. 
     
     
         17 . The semiconductor device of  claim 13 , wherein the first epitaxial structure comprises one or more inverted metamorphic structures. 
     
     
         18 . The semiconductor device of  claim 13 , wherein the first epitaxial structure comprises one or more solar cells. 
     
     
         19 . The semiconductor device of  claim 13 , wherein the carrier mediums comprise at least one of silicon, metal, glass, gold, silver, copper, nickel, titanium, and platinum. 
     
     
         20 . The semiconductor device of  claim 13 , wherein the first epitaxial structure comprises an array of individual cells. 
     
     
         21 . A method of fabricating epitaxial structures, the method comprising:
 growing a first etch stop on a first side of a substrate;   growing a first epitaxial layer on the first side of the substrate;   growing a second etch stop on a second side of the substrate, the second side being on an opposite side of the substrate from the first side;   growing a second epitaxial layer on the second side of the substrate;   applying a first carrier medium to the first side of the substrate; and   applying a second carrier medium to the second side of the substrate,   wherein a first epitaxial structure comprises the first etch stop, the first epitaxial layer, and the first carrier medium.   
     
     
         22 . The method of  claim 21 , further comprising dividing the substrate into two parts to separate the first epitaxial structure and a second epitaxial structure including the second etch stop, the second epitaxial layer, and the second carrier medium. 
     
     
         23 . The method of  claim 21 , further comprising flipping the substrate. 
     
     
         24 . The method of  claim 21 , wherein the first epitaxial structure comprises one or more laser cells. 
     
     
         25 . The method of  claim 21 , wherein the first epitaxial structure comprises one or more light emitting diode cells. 
     
     
         26 . The method of  claim 21 , wherein the first epitaxial structure comprises one or more infrared sensor cells. 
     
     
         27 . A method of fabricating epitaxial structures, the method comprising dividing a substrate including a first epitaxial structure on a first side of the substrate and a second epitaxial structure on a second side of the substrate into two parts to separate the first epitaxial structure and the second epitaxial structure, each of the first and second epitaxial structures comprising an etch stop, an epitaxial layer, and a carrier medium, the first side being on an opposite side of the substrate from the second side. 
     
     
         28 . The method of  claim 27 , further comprising removing residual substrate from the first and second epitaxial structures. 
     
     
         29 . The method of  claim 27 , further comprising removing the etch stops. 
     
     
         30 . The method of  claim 27 , wherein the first epitaxial structure comprises one or more laser cells. 
     
     
         31 . The method of  claim 27 , wherein the first epitaxial structure comprises one or more light emitting diode cells. 
     
     
         32 . The method of  claim 27 , wherein the first epitaxial structure comprises one or more infrared sensor cells.