US2013248364A1PendingUtilityA1

Electrochemical sensors

Assignee: SENSOR INNOVATIONS INCPriority: Dec 16, 2010Filed: Mar 6, 2013Published: Sep 26, 2013
Est. expiryDec 16, 2030(~4.4 yrs left)· nominal 20-yr term from priority
G01N 27/4167G01N 27/3335Y10T428/24421Y02A90/10G01N 27/302
52
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Claims

Abstract

Systems and methods are provided for detecting the presence of an analyte in a sample. A solid state electrochemical sensor can include a redox active moiety having an oxidation and/or reduction potential that is sensitive to the presence of an analyte immobilized over a surface of a working electrode. A redox active moiety having an oxidation and/or reduction potential that is insensitive to the presence of the analyte can be used for reference. Voltammetric measurements made using such systems can accurately determine the presence and/or concentration of the analyte in the sample. The solid state electrochemical sensor can be robust and not require calibration or re-calibration.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A sensor for detecting the presence or absence of an analyte, comprising:
 an electrode having a surface having immobilized thereon a redox-active moiety, wherein the redox-active moiety exhibits an oxidation potential and/or a reduction potential that is sensitive or insensitive to the presence of the analyte; and   a light-emitting device adjacent to said electrode, said light-emitting device configured to generate light.   
     
     
         2 . The sensor of  claim 1 , wherein the light-emitting device is configured to generate light that is i) incident on said surface, ii) incident on another surface of said electrode, said another surface opposite from said surface, and/or iii) directed through said electrode. 
     
     
         3 . The sensor of  claim 1 , wherein the electrode is formed of a semiconductor material. 
     
     
         4 . The sensor of  claim 3 , wherein the semiconductor material includes silicon. 
     
     
         5 . The sensor of  claim 1 , wherein the electrode is formed of a non-semiconductor material. 
     
     
         6 . The sensor of  claim 5 , wherein the non-semiconductor material includes carbon. 
     
     
         7 . The sensor of  claim 1 , wherein the light-emitting device is a light-emitting diode having an active region configured to generate light upon the recombination of electrons and holes. 
     
     
         8 . The sensor of  claim 7 , wherein the light-emitting diode is an organic light-emitting diode. 
     
     
         9 . The sensor of  claim 1 , wherein light from said light-emitting device is incident on said surface. 
     
     
         10 . A sensor for detecting the presence or absence of an analyte, comprising a working electrode having a redox active moiety formed adjacent to a light emitting device. 
     
     
         11 . The sensor of  claim 10 , wherein the working electrode is formed of a semiconductor material. 
     
     
         12 . The sensor of  claim 11 , wherein the semiconductor material comprises silicon. 
     
     
         13 . The sensor of  claim 10 , wherein the working electrode is formed of a non-semiconductor material. 
     
     
         14 . The sensor of  claim 13 , wherein the non-semiconductor material comprises carbon. 
     
     
         15 . The sensor of  claim 10 , wherein the light-emitting device is a light-emitting diode having an active region configured to generate light upon the recombination of electrons and holes. 
     
     
         16 . A solid state sensor for detecting the presence or absence of an analyte, comprising a solid state electrode configured to detect the presence or absence of the analyte, and a light emitting device adjacent to the solid state electrode. 
     
     
         17 . The solid state sensor of  claim 16 , wherein the solid state electrode is formed of a semiconductor material. 
     
     
         18 . The solid state sensor of  claim 17 , wherein the semiconductor material comprises silicon. 
     
     
         19 . The solid state sensor of  claim 16 , wherein the solid state electrode is formed of a non-semiconductor material. 
     
     
         20 . The solid state sensor of  claim 19 , wherein the non-semiconductor material comprises carbon.

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