Method for manufacturing semiconductor device and semiconductor device

Abstract

A semiconductor device comprising a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; and a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer, wherein, a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; and   a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer,   wherein,
 a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate. 
   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the substrate is made of sapphire, SiC, α-ZnS, ZnO, or a nitride-based III-V compound semiconductor. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the semiconductor device is a light emitting diode, or a semiconductor laser. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the principal surface of the hexagonal crystal structure is oriented off at an angle of not less than −0.5° and not more than 0° from a main plane of the hexagonal crystal structure. 
     
     
         5 . The semiconductor device according to  claim 4 , wherein the main plane of the hexagonal crystal structure is an R-plane and the principal surface of the hexagonal crystal structure is oriented off at an angle of not less than −0.5° and not more than 0° from the R-plane with respect to with respect to a direction of a C-axis. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the nitride-based group III-V compound semiconductor layer is a GaN layer. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the nitride-based group III-V compound semiconductor layer is one of a GaN layer, an AlGaN layer, an AlGaInN layer and an InGaN layer. 
     
     
         8 . A semiconductor device comprising:
 a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate;   a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer; and   a device structure on the nitride-based group III-V compound semiconductor layer,   wherein,
 a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate. 
   
     
     
         9 . The semiconductor device according to  claim 8 , wherein the substrate is made of sapphire, SiC, α-ZnS, ZnO, or a nitride-based III-V compound semiconductor. 
     
     
         10 . The semiconductor device according to  claim 8 , wherein the semiconductor device is a light emitting diode, or a semiconductor laser. 
     
     
         11 . The semiconductor device according to  claim 8 , wherein the principal surface of the hexagonal crystal structure is oriented off at an angle of not less than −0.5° and not more than 0° from a main plane of the hexagonal crystal structure. 
     
     
         12 . The semiconductor device according to  claim 11 , wherein the main plane of the hexagonal crystal structure is an R-plane and the principal surface of the hexagonal crystal structure is oriented off at an angle of not less than −0.5° and not more than 0° from the R-plane with respect to with respect to a direction of a C-axis. 
     
     
         13 . The semiconductor device according to  claim 8 , wherein the nitride-based group III-V compound semiconductor layer is a GaN layer. 
     
     
         14 . The semiconductor device according to  claim 8 , wherein the nitride-based group III-V compound semiconductor layer is one of a GaN layer, an AlGaN layer, an AlGaInN layer and an InGaN layer.