High temperature sheet handling system and methods

Abstract

Methods and apparatus provide for imparting a controlled supply of gas to at least one Bernoulli chuck to provide a balanced draw and repellant gas flow to a material sheet; and at least one of: elevating a temperature of the supply of gas to the at least one Bernoulli chuck such that the gas flow to the material sheet is provided at the elevated temperature, providing a stream of gas to an insulator substrate to promote separation of an exfoliation layer from a donor semiconductor wafer, and providing a stream of gas to a junction of the insulator substrate and any support structure to promote separation of the insulator substrate and the supporting structure.

1 - 16 . (canceled) 
     
     
         17 . A semiconductor on insulator handling apparatus, comprising:
 at least one Bernoulli chuck operable to impart a balanced draw and repellant gas flow, in response to a controlled supply of gas, to a first surface of a donor semiconductor wafer of a semiconductor on insulator structure, a second surface of the donor semiconductor wafer being coupled to an insulator substrate, and the donor semiconductor wafer including a weakened region defining an exfoliation layer between the weakened region and the second surface; and   at least one gas jet located proximate to a junction of the donor semiconductor wafer and the insulator substrate, and operable to impart a stream of gas to the insulator substrate to promote separation of the exfoliation layer from the donor semiconductor wafer.   
     
     
         18 . The semiconductor on insulator handling apparatus of  claim 17 , wherein the at least one gas jet located at a corner of the semiconductor on insulator structure. 
     
     
         19 . The semiconductor on insulator handling apparatus of  claim 17 , wherein:
 the semiconductor on insulator structure includes a plurality of semiconductor tiles coupled to the insulator substrate;   at least one Bernoulli chuck is positioned to impart a balanced draw and repellant gas flow to respective first surfaces of each of the semiconductor tiles; and   at least one gas jet is located proximate to a junction of each of the semiconductor tiles and the insulator substrate.   
     
     
         20 . The semiconductor on insulator handling apparatus of  claim 17 , further comprising a controller operable to program the controlled supply of gas to the at least one Bernoulli chuck and to program a source of gas to the at least one gas jet. 
     
     
         21 . The semiconductor on insulator handling apparatus of  claim 17 , further comprising at least one further gas jet located proximate to a junction of the insulator substrate and any supporting structure, and operable to impart a stream of gas to the junction to promote separation of the insulator substrate and the supporting structure. 
     
     
         22 . The semiconductor on insulator handling apparatus of  claim 21 , wherein the at least one further gas jet is located at a corner of the insulator substrate. 
     
     
         23 . The semiconductor on insulator handling apparatus of  claim 17 , further comprising a gas temperature regulator coupled to the at least one Bernoulli chuck such that the supply of gas thereto is provided at an elevated temperature substantially matching a temperature of the material sheet prior to imparting the gas flow. 
     
     
         24 . A semiconductor on insulator handling apparatus, comprising:
 at least one Bernoulli chuck operable to impart a balanced draw and repellant gas flow, in response to a controlled supply of gas, to a first surface of a semiconductor wafer of a semiconductor on insulator structure, a second surface of the semiconductor wafer being coupled to an insulator substrate; and   at least one gas jet located proximate to a junction of the insulator substrate and any support structure, and operable to impart a stream of gas to the junction to promote separation of the insulator substrate and the supporting structure.   
     
     
         25 . A method, comprising:
 providing a controlled supply of gas to at least one Bernoulli chuck to impart a balanced draw and repellant gas flow to a material sheet; and   elevating a temperature of the supply of gas to the at least one Bernoulli chuck such that the gas flow to the material sheet is provided at the elevated temperature substantially matching a temperature of the material sheet prior to imparting the gas flow.   
     
     
         26 . The method of  claim 25 , wherein at least one of:
 the supply of gas to the at least one Bernoulli chuck is at a temperature between about 300 to 1000° C.;   the supply of gas to the at least one Bernoulli chuck is at a temperature between about 500 to 700° C.; and   the supply of gas to the at least one Bernoulli chuck is at a temperature substantially matching a temperature of the material sheet prior to imparting the gas flow.   
     
     
         27 . A method, comprising:
 providing a controlled supply of gas to at least one Bernoulli chuck to impart a balanced draw and repellant gas flow to a first surface of a donor semiconductor wafer of a semiconductor on insulator structure, a second surface of the donor semiconductor wafer being coupled to an insulator substrate, and the donor semiconductor wafer including a weakened region defining an exfoliation layer between the weakened region and the second surface; and   providing a stream of gas to the insulator substrate to promote separation of the exfoliation layer from the donor semiconductor wafer.   
     
     
         28 . The method of  claim 27 , further comprising regulating the temperature of the stream of gas such that the stream of gas is provided at an elevated temperature substantially matching a temperature of the semiconductor on insulator structure. 
     
     
         29 . A method, comprising:
 providing a controlled supply of gas to at least one Bernoulli chuck to impart a balanced draw and repellant gas flow to a first surface of a semiconductor wafer of a semiconductor on insulator structure, a second surface of the semiconductor wafer being coupled to an insulator substrate; and   providing a stream of gas to a junction of the insulator substrate and any support structure to promote separation of the insulator substrate and the supporting structure.   
     
     
         30 . The method of  claim 29 , further comprising regulating the temperature of the stream of gas such that the stream of gas is provided at an elevated temperature substantially matching a temperature of the semiconductor on insulator structure.