US2013266678A1PendingUtilityA1

Thermal insulation layer and pressure transfer medium for high pressure high temperature cell

56
Assignee: SMITH INTERNATIONALPriority: Apr 9, 2012Filed: Mar 14, 2013Published: Oct 10, 2013
Est. expiryApr 9, 2032(~5.7 yrs left)· nominal 20-yr term from priority
Inventors:Yahua BaoJ. Daniel BelnapStewart N. Middlemiss
B01J 3/067B30B 11/004B30B 15/00B01J 3/065
56
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A thermal insulation layer for an HPHT cell, the thermal insulation layer including CsCl, CsBr, CsI, or a combination thereof, and the thermal insulation layer being electrically insulating; the thermal insulation layer including a thermal insulation sleeve and/or a thermal insulation button for an HPHT cell; a pressure transfer medium for an HPHT cell, the pressure transfer medium including CsBr, CsI or a combination thereof; and a pressure transfer medium for an HPHT cell, the pressure transfer medium including CsCl and additive, with the proviso that the additive does not include ZrO 2 are disclosed. HPHT press systems that include a thermal insulation layer or a pressure transfer medium according to embodiments of the present disclosure are also disclosed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A thermal insulation layer for use in a high-pressure high-temperature press, the thermal insulation layer comprising a material selected from the group consisting of cesium chloride (CsCl), cesium bromide (CsBr), cesium iodide (CsI) and combinations thereof, said thermal insulation layer being electrically insulating. 
     
     
         2 . The thermal insulation layer of  claim 1 , wherein the thermal insulation layer has an electrical resistivity of more than about 0.1 ohm.cm. 
     
     
         3 . The thermal insulation layer of  claim 1 , wherein the thermal insulation layer further comprises an additive. 
     
     
         4 . The thermal insulation layer of  claim 3 , wherein the additive comprises electrically conductive or semiconductive particles. 
     
     
         5 . The thermal insulation layer of  claim 3 , wherein the additive comprises a material selected from the group consisting of chromites, ferrites, metals, semiconductors, superconductive oxides and combinations thereof. 
     
     
         6 . The thermal insulation layer of  claim 5 , wherein the additive comprises chromite according to the formulas LCrO 3  or M I Cr 2 O 4 , wherein L is yttrium or a rare earth element, and M I  is a transition metal, Mg or Li. 
     
     
         7 . The thermal insulation layer of  claim 5 , wherein chromite is selected from the group consisting of LaCrO 3 , FeCr 2 O 4 , CoCr 2 O 4 , MgCr 2 O 4  and combinations thereof. 
     
     
         8 . The thermal insulation layer of  claims 7 , wherein the chromite is doped with Mg, Ca, Sr, or a combination thereof. 
     
     
         9 . The thermal insulation layer of  claim 5 , wherein the additive comprises ferrite according to the formula M II Fe 2 O 4  or M III Fe 12 O 19 , wherein M II  is a transition metal, Mg, or Li, and M III  is Ba, Sr, or a combination thereof. 
     
     
         10 . The thermal insulation layer of  claim 5 , wherein ferrite is selected from the group consisting of Fe 3 O 4 , CoFe 2 O 4 , ZnFe 2 O 4 , BaFe 12 O 19 , SrFe 12 O 19 , Mn a Zn (1-a) Fe 2 O 4 , Ni a Zn (1-a) Fe 2 O 4 , and combinations thereof, wherein a is in a range of 0.01 to 0.99. 
     
     
         11 . The thermal insulation layer of  claim 5 , wherein the metal is a refractory metal selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, Pt, and combinations thereof. 
     
     
         12 . The thermal insulation layer of  claim 5 , wherein the metal is selected from the group consisting of Al, Fe, Mn, Ni, Co, Cu, B, Si, Be, Mg, Ca, Sr, Ba, Ga, In, Sn, Pb, Bi and combinations thereof. 
     
     
         13 . The thermal insulation layer of  claim 3 , wherein the additive comprises electrically insulating particles. 
     
     
         14 . The thermal insulation layer of  claim 3 , wherein the additive comprises a material selected from the group consisting of ZrO 2 , MgO, CaO, Al 2 O 3 , Cr 2 O 3 , aluminates and combinations thereof. 
     
     
         15 . The thermal insulation layer of  claims 3 , wherein the additive is present in the thermal insulation layer in an amount in a range of about 0.1 to about 50 volume percent based on the total volume of the thermal insulation layer. 
     
     
         16 . The thermal insulation layer of  claims 3 , wherein the additive is present in the thermal insulation layer in an amount of less than  5  volume percent based on the total volume of the thermal insulation layer. 
     
     
         17 . A high-pressure high-temperature press system, the high-pressure high-temperature press system comprising:
 at least one anvil;   a heating element;   a current path for electrically connecting the at least one anvil and the heating element; and   a thermal insulation layer surrounding the heating element, the thermal insulation layer comprising a material selected from the group consisting of cesium chloride (CsCl), cesium bromide (CsBr), cesium iodide (CsI) and combinations thereof, said thermal insulation layer being electrically insulating.   
     
     
         18 . The high-pressure high-temperature press system of  claim 17 , wherein the thermal insulation layer is separated from the anvil by a material that is different from the material of the thermal insulation layer. 
     
     
         19 . The high-pressure high-temperature press system of  claim 17 , wherein the thermal insulation layer is separate from the current path. 
     
     
         20 . The high-pressure high-temperature press system of  claim 17 , wherein the thermal insulation layer has an electrical resistivity of more than about 0.1 ohm.cm. 
     
     
         21 . A pressure transfer medium for use in a high-pressure high-temperature press, the pressure transfer medium comprising cesium bromide (CsBr), cesium iodide (CsI), or a combination thereof. 
     
     
         22 . The pressure transfer medium of  claim 21 , wherein the pressure transfer medium further comprises an additive. 
     
     
         23 . The pressure transfer medium of  claim 22 , wherein the additive comprises electrically conductive or semiconductive particles. 
     
     
         24 . The pressure transfer medium of  claim 22 , wherein the additive comprises a material selected from the group consisting of chromites, ferrites, metals, semiconductors, superconductive oxides and combinations thereof. 
     
     
         25 . The pressure transfer medium of  claim 24 , wherein the additive comprises chromite according to the formulas LCrO 3  or M I Cr 2 O 4 , wherein L is yttrium or a rare earth element, and M I  is a transition metal, Mg or Li. 
     
     
         26 . The pressure transfer medium of  claim 24 , wherein chromite is selected from the group consisting of LaCrO 3 , FeCr 2 O 4 , CoCr 2 O 4 , MgCr 2 O 4 , and combinations thereof. 
     
     
         27 . The pressure transfer medium of  claims 26 , wherein the chromite is doped with Mg, Ca, Sr or a combination thereof. 
     
     
         28 . The pressure transfer medium of  claim 24 , wherein the additive comprises ferrite according to the formula M II Fe 2 O 4  or M III Fe 12 O 19 , wherein M II  is a transition metal, Mg, or Li, and M III  is Ba, Sr, or a combination thereof. 
     
     
         29 . The pressure transfer medium of  claim 24 , wherein ferrite is selected from the group consisting of Fe 3 O 4 , CoFe 2 O 4 , ZnFe 2 O 4 , BaFe 12 O 19 , SrFe 12 O 19 , Mn a Zn (1-a) Fe 2 O 4 , Ni a Zn (1-a) Fe 2 O 4 , and combinations thereof, wherein a is in range of 0.01 to 0.99. 
     
     
         30 . The pressure transfer medium of  claim 24 , wherein the metal is a refractory metal selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Ru, Rh, Hf, Ta, W, Re, Os, Ir, Pt, and combinations thereof. 
     
     
         31 . The pressure transfer medium of  claim 24 , wherein the metal is selected from the group consisting of Al, Fe, Mn, Ni, Co, Cu, B, Si, Be, Mg, Ca, Sr, Ba, Ga, In, Sn, Pb, Bi and combinations thereof. 
     
     
         32 . The pressure transfer medium of  claim 22 , wherein the additive is present in the pressure transfer medium in an amount in a range of about 0.01 to about 50 volume percent based on the total volume of the pressure transfer medium. 
     
     
         33 . A high-pressure high-temperature press system, the high-pressure high-temperature press system comprising the pressure transfer medium of 21. 
     
     
         34 . A pressure transfer medium for use in a high-pressure high-temperature press, the pressure transfer medium comprising cesium (CsCl) and an additive, with the proviso that the additive does not include ZrO 2 . 
     
     
         35 . A high-pressure high-temperature press system, the high-pressure high-temperature press system comprising the pressure transfer medium of  claim 34 .

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.