Method of increasing an energy density and an achievable power output of an energy storage device

Abstract

Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.

1 - 57 . (canceled) 
     
     
         58 . A method of increasing an energy density of an energy storage device, the method comprising:
 providing the energy storage device, wherein the energy storage device comprises at least one porous structure containing multiple channels and wherein each one of the channels has an opening to a surface of the porous structure; and   increasing a capacitance of the energy storage device by:
 performing a procedure designed to increase a distance to which an electrolyte penetrates within the channels; and 
 introducing the electrolyte before, during, or after the performance of the procedure. 
   
     
     
         59 . The method of  claim 58  wherein:
 the porous structure comprises one of silicon, germanium, and a silicon-germanium alloy. 
 
     
     
         60 . The method of  claim 58  wherein:
 the procedure comprises one of:
 placing the energy storage device in a vacuum; 
 subjecting the energy storage device to ultrasonic signals; 
 subjecting the energy storage device to a pressure differential; 
 applying a surface treatment to a surface of the channels; and 
 placing the energy storage device in a centrifuge. 
 
 
     
     
         61 . The method of  claim 60  wherein:
 the surface treatment comprises making the surface more wettable by depositing a material on surfaces of the channels. 
 
     
     
         62 . A method of increasing an energy density of an energy storage device, the method comprising:
 providing the energy storage device, wherein the energy storage device comprises at least one porous structure containing multiple channels, wherein each one of the channels has an opening to a surface of the porous structure, and wherein the electrically conductive structure comprises an alloy composed at least in part of a first substance and an electrically conductive second substance; and   annealing the energy storage device in order to cause the electrically conductive second substance to diffuse to a surface of the electrically conductive structure and form an electrically conductive layer thereon.   
     
     
         63 . The method of  claim 62  wherein:
 the porous structure comprises one of silicon, germanium, and a silicon-germanium alloy. 
 
     
     
         64 . A method of increasing an energy density of an energy storage device, the method comprising:
 providing the energy storage device, wherein the energy storage device comprises at least one porous structure containing multiple channels and further comprises an electrolyte in physical contact with the porous structure, and wherein each one of the channels has an opening to a surface of the porous structure; and   increasing a capacitance of the energy storage device by placing a dielectric material into the porous structure.   
     
     
         65 . The method of  claim 64  wherein:
 the porous structure comprises one of silicon, germanium, and a silicon-germanium alloy. 
 
     
     
         66 . The method of  claim 64  wherein:
 placing the dielectric material into the porous structure comprises using one of:
 an electrografting nanotechnology process; 
 a hydrothermal growth process; 
 an electroplating process; 
 an atomic layer deposition process; 
 a sol-gel synthesis process; and 
 a venetian glass approach. 
 
 
     
     
         67 . The method of  claim 66  wherein:
 at least some of the channels extend completely through the porous structure; and 
 the atomic layer deposition process comprises a through-substrate atomic layer deposition process. 
 
     
     
         68 . The method of  claim 64  wherein:
 the dielectric material is diffusion limited. 
 
     
     
         69 . A method of increasing an energy density of an energy storage device, the method comprising:
 providing the energy storage device, wherein the energy storage device comprises at least one porous structure containing multiple channels, and wherein each one of the channels has an opening to a surface of the porous structure;   increasing a capacitance of the energy storage device by depositing a material into the porous structure using an atomic layer deposition process; and   adjusting at least one of a pressure and an exposure time of the atomic layer deposition process based on an aspect ratio of at least one of the channels.   
     
     
         70 . The method of  claim 69  wherein:
 the porous structure comprises one of silicon, germanium, and a silicon-germanium alloy. 
 
     
     
         71 . The method of  claim 69  wherein:
 the aspect ratio is at least 10 3 ; and 
 for each precursor cycle, the exposure time is at least 10 seconds or the pressure is at least 0.1 Torr. 
 
     
     
         72 . The method of  claim 69  wherein:
 the energy storage device comprises an electrolyte in physical contact with the porous structure; and 
 the material is a dielectric material having a dielectric constant higher than that of the electrolyte. 
 
     
     
         73 . A method of increasing an achievable power output of an energy storage device, the method comprising:
 providing the energy storage device, wherein the energy storage device comprises at least one porous structure containing multiple channels, and wherein each one of the channels has an opening to a surface of the porous structure; and   depositing an electrically conductive material into the porous structure.   
     
     
         74 . The method of  claim 73  wherein:
 depositing the electrically conductive material into the porous structure is accomplished using an atomic layer deposition process or an electroplating process. 
 
     
     
         75 . The method of  claim 73  wherein:
 the porous structure comprises one of silicon, germanium, and a silicon-germanium alloy. 
 
     
     
         76 . The method of  claim 75  wherein:
 the porous structure comprises silicon; 
 the electrically conductive material is TiN; and 
 the method further comprises depositing a passivation layer on the silicon prior to the deposition of the electrically conductive material, the passivation layer comprising TiO 2 . 
 
     
     
         77 . The method of  claim 73  further comprising:
 depositing a dielectric material into the porous structure. 
 
     
     
         78 . The method of  claim 77  wherein:
 the dielectric material is diffusion limited. 
 
     
     
         79 . A method of increasing an energy density of an energy storage device, the method comprising:
 providing the energy storage device, wherein the energy storage device comprises at least one porous structure containing multiple channels, wherein each one of the channels has an opening to a surface of the porous structure; and   increasing a breakdown voltage of the energy storage device by placing an ionic liquid in physical contact with the porous structure.   
     
     
         80 . The method of  claim 79  wherein:
 the porous structure comprises one of silicon, germanium, and a silicon-germanium alloy. 
 
     
     
         81 . The method of  claim 79  further comprising:
 depositing a dielectric material into the porous structure. 
 
     
     
         82 . A method of increasing the energy density of an energy storage device, the method comprising:
 providing the energy storage device, wherein the energy storage device comprises at least one porous structure containing multiple channels, wherein each one of the channels has an opening to a surface of the porous structure; and   depositing a material into the porous structure in order to form a pseudocapacitor.   
     
     
         83 . The method of  claim 82  wherein:
 the porous structure comprises one of silicon, germanium, and a silicon-germanium alloy. 
 
     
     
         84 . The method of  claim 82  wherein:
 the material is a transition metal oxide. 
 
     
     
         85 . The method of  claim 82  wherein:
 depositing the material into the porous structure is accomplished using an atomic layer deposition process.