Method for forming an at least partially crystalline alumina layer

Abstract

A method for forming an at least partially crystalline alumina film includes providing a substrate, and depositing alumina onto the substrate at an ambient temperature to form the at least partially crystalline alumina film.

What is claimed is: 
     
         1 . A method for forming an at least partially crystalline alumina film, the method comprising:
 providing a substrate; and   depositing alumina onto the substrate at an ambient temperature to form the at least partially crystalline alumina film.   
     
     
         2 . The method of  claim 1 , further comprising:
 the substrate comprising at least partially crystalline Al 2 O 3 , and   the at least partially crystalline alumina layer is formed on the substrate by depositing alumina onto the substrate.   
     
     
         3 . The method of  claim 1 , further comprising:
 the substrate containing iron; and   the at least partially crystalline alumina layer is formed on the substrate by depositing alumina onto the substrate.   
     
     
         4 . The method of  claim 1 , further comprising:
 an iron containing film formed on the substrate; and   the at least partially crystalline alumina layer formed on the substrate by ion milling at least a portion of an upper layer of the iron containing film at least one milling angle and ion milling at least a portion of the iron containing film at a final milling angle ranging from about 10° to about 30° relative to normal to the substrate and then depositing a layer of alumina.   
     
     
         5 . The method of  claim 4 , wherein the final milling angle is about 15° relative to normal to the substrate.