Semiconductor device

Abstract

A semiconductor device includes a semiconductor element having a substrate of GaAs, InP, or GaN, and an element securing member bonded to the semiconductor element by solder. The element securing member is a composite material of Cu and carbon or a composite of Al and carbon.

1 . A semiconductor device comprising:
 a semiconductor element having a substrate of one of GaAs, InP, and GaN; and   an element securing member bonded to said semiconductor element by solder and composed of a composite of Cu and carbon.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein said composite material is obtained by sintering Cu and carbon fiber. 
     
     
         3 . The semiconductor device according to  claim 1 , further comprising a barrier metal layer of Ti or Pt on a surface of said element securing member and an Au layer on a surface of said barrier metal layer, wherein said solder is located between said Au layer and said semiconductor element. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising:
 a radiator block connected to said element securing member,   a stem connected to said radiator block, and   a cap secured to said stem and covering said semiconductor element, said   element securing member, and said radiator block.   
     
     
         5 . The semiconductor device according to  claim 1 , further comprising a stem connected to said element securing member, and a cap secured to said stem and covering said semiconductor element and said element securing member. 
     
     
         6 . The semiconductor device according to  claim 4 , wherein said stem is the same material as said element securing member. 
     
     
         7 . The semiconductor device according to  claim 5 , wherein said stem and said element securing member are integral and the same material. 
     
     
         8 . The semiconductor device according to  claim 6 , further comprising an iron layer on a surface of said stem, wherein said cap is welded to said iron layer and thereby secured to said stem. 
     
     
         9 . The semiconductor device according to  claim 1 , further comprising a frame secured to said element securing member. 
     
     
         10 . A semiconductor device comprising:
 a semiconductor element having a substrate of one of GaAs, InP, and GaN; and   an element securing member bonded to said semiconductor element by solder and composed of a composite of Al and carbon.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein said composite material is obtained by sintering Al and carbon fiber. 
     
     
         12 . The semiconductor device according to  claim 10 , further comprising a barrier metal layer of Ti or Pt on a surface of said element securing member and an Au layer on a surface of said barrier metal layer, wherein said solder is located between said Au layer and said semiconductor element. 
     
     
         13 . The semiconductor device according to  claim 10 , further comprising:
 a radiator block connected to said element securing member,   a stem connected to said radiator block, and   a cap secured to said stem and covering said semiconductor element, said element securing member, and said radiator block.   
     
     
         14 . The semiconductor device according to  claim 10 , further comprising a stem connected to said element securing member, and a cap secured to said stem and covering said semiconductor element and said element securing member. 
     
     
         15 . The semiconductor device according to  claim 13 , wherein said stem is the same material as said element securing member. 
     
     
         16 . The semiconductor device according to  claim 14 , wherein said stem and said element securing member are integral and the same material. 
     
     
         17 . The semiconductor device according to  claim 15 , further comprising an iron layer on a surface of said stem, wherein said cap is welded to said iron layer and thereby secured to said stem. 
     
     
         18 . The semiconductor device according to  claim 10 , further comprising a frame secured to said element securing member.