US2013312674A1PendingUtilityA1

Integrated system for vapor generation and thin film deposition

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Assignee: MSP CORPPriority: Mar 26, 2010Filed: Aug 6, 2013Published: Nov 28, 2013
Est. expiryMar 26, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Y10T137/8593Y10T137/7761Y10T137/0379Y10T137/0318F01K 17/04
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Claims

Abstract

An apparatus and method for generating vapor from a liquid precursor for a thin film deposition on a substrate includes an inlet section in fluid communication with a downstream vaporization chamber section. The inlet section comprises a gas inlet for receiving gas from a gas source through a gas flow sensor and a gas flow control valve and a liquid inlet for receiving liquid from a liquid source through a liquid flow sensor and a liquid flow control valve. An electronic controller controls the gas and liquid flow control valves thereby controlling the rates of gas and liquid flow into the inlet section to generate vapor in the downstream vaporization chamber section for thin film deposition on the substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A multi-channel gas flow controller having a plurality of gas flow channels, the controller comprising a metal block with internal gas flow passageways and inlet and outlet ports for the gas to flow through each gas flow channel being provided with an orifice, a pressure sensor and a flow control valve; and a multi-channel electronic controller for controlling the rate of gas flow through each gas flow channel by providing a signal to the gas flow control valve in response to an output signal from said pressure sensor. 
     
     
         2 . The apparatus of  claim 1  including a temperature sensor for sensing gas temperature to compensate for the effect of temperature on a measured mass rate of gas flow. 
     
     
         3 . The apparatus of  claim 1  for providing gas flow control of at least two gas flow channels. 
     
     
         4 . A method of controlling the rate of gas and liquid flow into a vaporization apparatus including an atomizer and a vaporization chamber, said rate of gas flow being measured by a gas flow sensor and controlled by a gas flow control valve, said rate of liquid flow being measured by a liquid flow sensor and controlled by a liquid flow control valve, said rates of gas and liquid flows being controlled by an electronic controller to control said gas and liquid flow rates to gas and liquid flow rate set point values. 
     
     
         5 . A method for multi-channel gas flow control of an apparatus comprising at least two flow channels, including sensing gas pressure upstream of an orifice in each flow channel, and controlling the rate of gas flow in each flow channel by an electronic controller to control the rate of gas flow through each flow channel in response to the gas pressure upstream of said orifice. 
     
     
         6 . The method of  claim 4  including additionally measuring the temperature of said gas to provide temperature compensation for measuring the gas flow in mass flow units.

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