Method of modifying a boundary region of a substrate

Abstract

A method of modifying a boundary region ( 9 ) of a substrate ( 3 ) bounded by a surface ( 10 ), wherein an evacuated process chamber ( 2 ) is provided having a plasma source ( 4 ) for generating a directed plasma jet ( 5 ), and wherein furthermore a reactive component is supplied into the process chamber ( 2 ) with a flow of a predefined size, and wherein the substrate ( 3 ) is heated to a predefined reaction temperature, characterized in that the reactive component is diffusion-activated by the directed plasma jet ( 5 ) such that the reactive component diffuses into the boundary region ( 11 ) of the substrate ( 3 ) at a predefinable diffusion rate.

1 . A method of modifying a boundary region of a substrate bounded by a surface, wherein an evacuated process chamber is provided having a plasma source for generating a directed plasma jet, and wherein furthermore a reactive component is supplied into the process chamber with a flow of a predefined size, and wherein the substrate is heated to a predefined reaction temperature, and wherein the reactive component is diffusion-activated by the directed plasma jet such that the reactive component diffuses into the boundary region of the substrate at a predefinable diffusion rate. 
     
     
         2 . A method in accordance with  claim 1 , wherein the reactive component is liquid and/or gaseous and/or powdery and/or a suspension. 
     
     
         3 . A method in accordance with  claim 1 , wherein the reactive component is injected into the plasma jet for the diffusion activation in the plasma source and/or is injected into the free plasma jet and/or is injected into the process chamber. 
     
     
         4 . A method in accordance with  claim 1 , wherein the reactive component, which includes a hydrocarbon compound and/or oxygen and/or nitrogen, reacts with the substrate in the boundary region of the substrate, and in so doing a compound is created in the boundary region. 
     
     
         5 . A method in accordance with  claim 1 , wherein the process chamber includes a heat source to be able to carry out the modification at a reaction temperature within a predefined temperature range. 
     
     
         6 . A method in accordance with  claim 1 , wherein the substrate is preheated to the reaction temperature by means of the additional heat source and/or the reaction temperature is controlled or regulated by means of the plasma jet during the modification. 
     
     
         7 . A method in accordance with  claim 1 , wherein hydrogen is supplied to the process chamber. 
     
     
         8 . A method in accordance with  claim 1 , wherein the reaction temperature of the substrate is set to a value in the range of 800-1200° C. 
     
     
         9 . A method in accordance with  claim 1 , wherein the plasma source and a substrate holder are moved relative to one another. 
     
     
         10 . A method in accordance with  claim 1 , wherein the substrate is held by the substrate holder. 
     
     
         11 . A method in accordance with  claim 1 , wherein a controlled adjustment apparatus is provided for the plasma source to control the direction of the plasma jet and/or the distance of the plasma source  4 )-from the substrate, in a range from 0.05 m to 1 m. 
     
     
         12 . A method in accordance with  claim 1 , wherein the power which is supplied to the plasma source lies between 1 kW and 100 kW. 
     
     
         13 . A method in accordance with  claim 1 , wherein the pressure in the process chamber during the method amounts to between 0.01 mbar and 100 mbar, 
     
     
         14 . A method in accordance with  claim 1 , wherein the gas quantity flow of the reactive component during the process amounts to between 1 SLPM and 100 SLPM. 
     
     
         15 . The method in accordance with  claim 14 , wherein the gas quantity flow of the reactive component during the process amounts to between 1 SLPM and 10 SLPM for nitrogen or between 0.1 SLPM and 2 SLPM for methane.