Rigid substrate, touch panel, and processing method of rigid substrate

Abstract

A rigid substrate, a touch panel including the rigid substrate, and a processing method of the rigid substrate are provided. The rigid substrate includes an ion strengthened surface layer completely covering the entire outer surface thereof. The rigid substrate has an etched wall, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall.

What is claimed is: 
     
         1 . A rigid substrate comprising an ion strengthened surface layer completely covering the entire outer surface of the rigid substrate, and the rigid substrate having an etched wall, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall. 
     
     
         2 . The rigid substrate as claimed in  claim 1 , wherein an average surface roughness of the etched wall ranges from  0 . 03  μm to  0 . 8  μm. 
     
     
         3 . The rigid substrate as claimed in  claim 1 , wherein the etched wall comprises a plurality of cracks, and aperture sizes of the cracks range from 3 μm to 15 μm. 
     
     
         4 . The rigid substrate as claimed in  claim 1 , wherein the etched wall comprises a plurality of cracks, and the average depth of the ion strengthened surface layer is substantially greater than an average depth of the cracks. 
     
     
         5 . A touch panel comprising:
 a rigid substrate comprising an ion strengthened surface layer completely covering the entire outer surface of the rigid substrate, wherein the rigid substrate has an etched wall, and an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall; and   a touch device disposed on the rigid substrate.   
     
     
         6 . The touch panel as claimed in  claim 5 , wherein an average surface roughness of the etched wall ranges from 0.03 μm to 0.8 μm. 
     
     
         7 . The touch panel as claimed in  claim 5 , wherein the etched wall comprises a plurality of cracks, and aperture sizes of the cracks range from 3 μm to 15 μm. 
     
     
         8 . The touch panel as claimed in  claim 5 , wherein the etched wall comprises a plurality of cracks, and the average depth of the ion strengthened surface layer is substantially greater than an average depth of the cracks. 
     
     
         9 . The touch panel as claimed in  claim 5  further comprising a decoration pattern layer disposed on the rigid substrate, and the decoration pattern layer is substantially located at a periphery of the touch device. 
     
     
         10 . A processing method of a rigid substrate comprising:
 performing a mechanical or material removal processing to a rigid motherboard to form at least one rigid substrate parison, so that the rigid substrate parison has a cutting wall;   performing an etching process on the cutting wall so that the cutting wall becomes an etched wall; and   performing a one-time ion strengthening process so that an entire outer surface of the rigid substrate parison completely comprises an ion strengthened surface layer to form the rigid substrate, wherein an average depth of the ion strengthened surface layer on the etched wall is substantially equivalent to an average depth of the ion strengthened surface layer outside of the etched wall.   
     
     
         11 . The processing method of the rigid substrate as claimed in  claim 10 , wherein steps of performing the etching process on the cutting wall comprises attaching a resistant layer onto the rigid substrate and enabling the resistant layer to expose a part of the cutting wall; and contacting the exposed part of the etched wall with an etchant. 
     
     
         12 . The processing method of the rigid substrate as claimed in  claim 10 , wherein a material of the rigid substrate parison is glass, and a material of the etchant is hydrofluoric acid. 
     
     
         13 . The processing method of the rigid substrate as claimed in  claim 10 , wherein the resistant layer is removed before performing the ion strengthening process. 
     
     
         14 . The processing method of the rigid substrate as claimed in  claim 10 , wherein an average surface roughness of the cutting wall ranges from 1.0 μm to 3 μm, and an average surface roughness of the etched wall ranges from 0.3 μm to 0.8 μm. 
     
     
         15 . The processing method of the rigid substrate as claimed in  claim 10 , wherein a step of performing the ion strengthening process comprises the rigid substrate wholly contacts with an ion strengthening liquid. 
     
     
         16 . The processing method of the rigid substrate as claimed in  claim 10 , wherein the mechanical or the material removal processing comprises at least one of cutting, grinding, hole boring, chamfering, patterned etching, and polishing process. 
     
     
         17 . The processing method of the rigid substrate as claimed in  claim 10 , wherein the etching process is performed with a dry etching medium or a wet etching medium, the dry etching medium comprises a fluorine-containing gas or a plasma, and the wet etching medium comprises at least a hydrofluoric acid or a fluorine-containing solvent.