Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device

Abstract

A sapphire substrate configured to form a light emitting diode (LED) chip providing light in multi-directions, a LED chip and an illumination device are provided in the present invention. The sapphire substrate includes a growth surface and a second main surface opposite to each other. A thickness of the sapphire substrate is thicker than or equal to 200 micrometers. The LED chip includes the sapphire substrate and at least one LED structure. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with a part of the growth surface without the LED structures. At least a part of light beams emitted from the LED structure pass through the sapphire substrate and emerge from the second main surface. The illumination device includes at least one LED chip and a supporting base. The LED chip is disposed on the supporting base.

What is claimed is: 
     
         1 . A sapphire substrate, configured to form a light emitting diode chip providing light in multi-directions, comprising a growth surface and a second main surface disposed opposite to each other, wherein a thickness of the sapphire substrate is thicker than or equal to 200 micrometers. 
     
     
         2 . The sapphire substrate of  claim 1 , wherein the second main surface comprises a non-planar structure. 
     
     
         3 . The sapphire substrate of  claim 1 , further comprising a diamond-like carbon (DLC) film, disposed on the growth surface or the second main surface. 
     
     
         4 . The sapphire substrate of  claim 3 , further comprising an optical film, disposed between the DLC film and the second main surface. 
     
     
         5 . The sapphire substrate of  claim 1 , wherein an area of the growth surface or an area of the second main surface is larger than 5 times of an total area formed from at least one light emitting surface of at least one light emitting diode (LED) structure disposed on the growth surface or the second main surface. 
     
     
         6 . The sapphire substrate of  claim 1 , further comprising at least one wavelength conversion layer disposed on the second main surface, wherein the wavelength conversion layer includes at least one kind of fluorescent powders. 
     
     
         7 . The sapphire substrate of  claim 1 , further comprising a reflector or filter disposed on the second main surface or the growth surface. 
     
     
         8 . The sapphire substrate of  claim 7 , wherein the reflector or filter comprises a plurality of insulating thin films with different refractive indexes. 
     
     
         9 . The sapphire substrate of  claim 8 , wherein the reflector comprises a plurality of metal oxide layers. 
     
     
         10 . The sapphire substrate of  claim 1 , further comprising a first connecting conductor and a second connecting conductor disposed on the growth surface or the second main surface. 
     
     
         11 . The sapphire substrate of  claim 1 , wherein a light transmittance of the sapphire substrate is larger than or equal to 70% for light beams having a wavelength ranges from 420 nanometers to 470 nanometers. 
     
     
         12 . The sapphire substrate of  claim 10 , wherein the first connecting conductor is connected to a first connecting electrode and the second connecting conductor is connected to a second connecting electrode. 
     
     
         13 . The sapphire substrate of  claim 12 , wherein the first connecting electrode and the second connecting electrode are relatively disposed on different sides of the sapphire substrate or on the same side of the sapphire substrate. 
     
     
         14 . The sapphire substrate of  claim 1 , wherein at least one pin is disposed on the sapphire substrate, and at least one electrically connecting port is disposed on the pin. 
     
     
         15 . A light emitting diode (LED) chip, providing light in multi-directions, comprising:
 a sapphire substrate of  claim 1 ; and   a plurality of light emitting diode (LED) structures, disposed on the growth surface and forming a first main surface where light emitted from with at least a part of the growth surface without the LED structures, and each of the LED structures comprises a first electrode and a second electrode,   wherein light emitted from at least one of the LED structures passes through the sapphire substrate and emerges from the second main surface.   
     
     
         16 . A light emitting diode (LED) chip, providing light in multi-directions, comprising:
 a sapphire substrate of  claim 1 ; and   at least one light emitting diode (LED) structures, disposed on the growth surface and forming a first main surface where light emitted from with at least a part of the growth surface without the LED structure, and the LED structure comprises a first electrode and a second electrode,   wherein the LED chip has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the sapphire substrate and emerge from the second main surface.   
     
     
         17 . The LED chip of  claim 15 , further comprising wavelength conversion layers respectively disposed on the first main surface and the second main surface, wherein a ratio of fluorescent powder concentration in the different wavelength conversion layers ranges from 1:0.5 to 1:3. 
     
     
         18 . The LED chip of  claim 15 , further comprising wavelength conversion layers respectively disposed on the LED structure and the second main surface, wherein a ratio of fluorescent powder concentration in the different wavelength conversion layers ranges from 1:0.5 to 1:3. 
     
     
         19 . The LED chip of  claim 15 , further comprising a plurality of LED structures disposed on the second main surface, wherein the LED structures on the growth surface are disposed interlacedly corresponding to the LED structures on the second main surface. 
     
     
         20 . An illumination device, comprising:
 a LED chip of  claim 15 ; and   a supporting base, wherein the LED chip is disposed on the supporting base.   
     
     
         21 . The illumination device of  claim 20 , wherein a first angle exists between the LED chip and the supporting base, and the first angle ranges from 30 degrees to 150 degrees. 
     
     
         22 . The illumination device of  claim 20 , further comprising a support coupled to the supporting base, wherein the LED chip is disposed on the support. 
     
     
         23 . The illumination device of  claim 22 , wherein the support is flexible for forming the first angle between the LED chip and the supporting base. 
     
     
         24 . The illumination device of  claim 20 , further comprising a plurality of LED chips, wherein at least some of the LED chips are point-symmetrically disposed on the supporting base or line-symmetrically disposed on the supporting base. 
     
     
         25 . The illumination device of  claim 20 , further comprising another LED chip, wherein one of the LED chips stands on the supporting base and the other one lies on the supporting base. 
     
     
         26 . An illumination device, comprising:
 a LED chip of  claim 15 ; and   a support, wherein the LED chip is disposed on the support.   
     
     
         27 . The illumination device of  claim 26 , wherein a material of the support includes one of selected from metal, composite metallic material, copper conductor, electric wire, ceramic substrate or printed circuit board.