Image sensor devices having dual-gated charge storage regions therein

Abstract

An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.

What is claimed is: 
     
         1 . An image sensor device, comprising:
 a dual-gated charge storage region within a substrate, said dual-gated charge storage region comprising first and second diodes within a common charge generating region configured to receive light incident on a surface of the image sensor device, said first and second diodes comprising respective first conductivity type regions responsive to first and second gate signals, respectively, which are active during non-overlapping time intervals, and respective second conductivity type regions that form non-rectifying semiconductor junctions with the common charge generating region;   a first transfer transistor having a first source/drain region electrically coupled to the common charge generating region; and   a second transfer transistor having a first source/drain region electrically coupled to the common charge generating region.   
     
     
         2 . The image sensor device of  claim 1 , wherein the first conductivity type regions of the first and second diodes are P-type anode regions; and wherein the second conductivity type regions of the first and second diodes are N-type cathode regions. 
     
     
         3 . The image sensor device of  claim 2 , wherein the first source/drain region of said first transistor is in the N-type cathode region associated with the first diode. 
     
     
         4 . The image sensor device of  claim 2 , wherein the substrate comprises a well region of first conductivity type therein; wherein the common charge generating region forms a P-N rectifying junction with the well region; and wherein said first transfer transistor comprises an insulated gate electrode extending opposite respective portions of the well region, the common charge generating region and the N-type cathode region of the first diode. 
     
     
         5 . An image sensor device, comprising:
 a dual-gated charge storage region within a substrate, said dual-gated charge storage region comprising first and second diodes within a common charge generating region configured to receive light incident on a surface of the image sensor device, said first and second diodes comprising respective first conductivity type anode regions adjacent a light receiving surface of the substrate and respective second conductivity type cathode regions that form non-rectifying semiconductor junctions with the common charge generating region; and   wherein the image sensor device is configured to drive the first conductivity type anode regions of the first and second diodes with first and second gate signals, respectively, which are active during first and second non-overlapping time intervals.   
     
     
         6 . The image sensor of  claim 5 , further comprising:
 a first transfer transistor having a source/drain region in the cathode region of the first diode; and   a second transfer transistor having a source/drain region in the cathode region of the second diode.   
     
     
         7 . The image sensor of  claim 5 , wherein the anode region of the first diode comprises a first plurality of P-type fingers within the common charge generating region; and wherein the anode region of the second diode comprises a second plurality of P-type fingers that are interdigitated with the first plurality of P-type fingers,