US2013328018A1PendingUtilityA1

Fluorine-modification process and applications thereof

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Assignee: CHEN KUEI-HSIENPriority: Jun 12, 2012Filed: Jun 12, 2012Published: Dec 12, 2013
Est. expiryJun 12, 2032(~5.9 yrs left)· nominal 20-yr term from priority
Inventors:Kuei-Hsien ChenHsieh-Cheng HanChing-Chun ChangLi-Chyong ChenChan-Yi Du
H10K 30/86H10K 30/85H10K 30/50H10K 85/151H10K 85/60H10K 85/211H10K 85/623H10K 30/80H10K 85/215H10K 85/113H10K 30/20H10K 30/211Y02E10/549Y02P70/50
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Claims

Abstract

The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.

Claims

exact text as granted — not AI-modified
1 . A process for reducing surface energy of a hole transport layer, comprising the following steps:
 providing a hole transport layer; and   providing a fluorine-containing layer directly on said hole transport layer.   
     
     
         2 . The process according to  claim 1 , wherein said providing said fluorine-containing layer comprising the following steps:
 obtaining a liquid by dissolving a fluorine-containing material in a solvent; and   depositing said liquid on said hole transport layer.   
     
     
         3 . The process according to  claim 1 , wherein said liquid comprises: 0.01˜10 volume percentage concentration of said fluorine-containing material; wherein said volume percentage concentration is based on the total volume of said solvent. 
     
     
         4 . The process according to  claim 2 , wherein said solvent comprises chlorobenzene, ethanol, water, or a mixture thereof 
     
     
         5 . The process according to  claim 2 , wherein said fluorine-containing material comprises fluorocarbon, silane derives thereof, or a mixture thereof 
     
     
         6 . The process according to  claim 5 , wherein said silane derives of fluorocarbon comprises polyfluoroalkoxysilane. 
     
     
         7 . The process according to  claim 5 , wherein said fluorocarbon comprises perfluorononane. 
     
     
         8 . The process according to  claim 1 , further comprising a heating step of heating said fluorine-containing layer at a temperature of 50˜300° C. 
     
     
         9 . The process according to  claim 8 , wherein said heating step is conducted by thermal treatment, microwave treatment, or a combination thereof. 
     
     
         10 . The process according to  claim 1 , wherein said hole transport layer comprises polyethylenedioxythiophene, polystyrenesulfonate, polyaniline, polyphenylenevinylene, TPD, NPB, or a mixture thereof. 
     
     
         11 . A process for recovering a moisture-degraded hole transport layer, comprising the following steps:
 obtaining a moisture-degraded hole transport layer; and   providing a fluorine-containing layer directly on said moisture-degraded hole transport layer.   
     
     
         12 . The process according to  claim 11 , wherein said providing said fluorine-containing layer comprising the following steps:
 obtaining a liquid by dissolving a fluorine-containing material in a solvent; and   depositing said liquid on said moisture-degraded hole transport layer.   
     
     
         13 . The process according to  claim 12 , wherein said liquid comprises: 0.01˜10 volume percentage concentration of said fluorine-containing material; wherein said volume percentage concentration is based on the total volume of said solvent. 
     
     
         14 . The process according to  claim 12 , wherein said solvent comprises chlorobenzene, ethanol, water, or a mixture thereof. 
     
     
         15 . The process according to  claim 12 , wherein said fluorine-containing material comprises fluorocarbon, silane derives thereof, or a mixture thereof 
     
     
         16 . The process according to  claim 11 , further comprising a heating step of heating said fluorine-containing layer at a temperature of 50˜300° C. 
     
     
         17 . The process according to  claim 11 , wherein said moisture-degraded hole transport layer comprises polyethylenedioxythiophene, polystyrenesulfonate, polyaniline, polyphenylenevinylene, TPD, NPB, or a mixture thereof 
     
     
         18 . The process according to  claim 11 , which is conducted at atmosphere. 
     
     
         19 . A process for manufacturing an electronic device, comprising the following steps:
 providing a substrate coated with a conductive material as a cathode;   providing a hole transport layer on said substrate;   providing a fluorine-containing layer directly on said hole transport layer;   providing an active layer directly on said fluorine-containing layer;   providing an electron transport layer on said active layer; and   providing an anode on said electron transport layer.   
     
     
         20 . The process according to  claim 19 , wherein said providing said fluorine-containing layer comprising the following steps:
 obtaining a liquid by dissolving a fluorine-containing material in a solvent; and   depositing said liquid on said hole transport layer.   
     
     
         21 . The process according to  claim 20 , wherein said liquid comprises: 0.0˜110 volume percentage concentration of said fluorine-containing material; wherein said volume percentage concentration is based on the total volume of said solvent. 
     
     
         22 . The process according to  claim 20 , wherein said solvent comprises chlorobenzene, ethanol, water, or a mixture thereof 
     
     
         23 . The process according to  claim 20 , wherein said fluorine-containing material comprises fluorocarbon, silane derives thereof, or a mixture thereof. 
     
     
         24 . The process according to  claim 19 , further comprising a heating step of heating said fluorine-containing layer at a temperature of 50˜300° C. 
     
     
         25 . The process according to  claim 19 , wherein said conductive material comprises conductive metal oxide, conductive polymer, or a mixture thereof 
     
     
         26 . The process according to  claim 19 , wherein said hole transport layer is a polyethylenedioxythiophene: polystyrenesulfonate layer. 
     
     
         27 . The process according to  claim 19 , wherein said active layer comprises a P-layer and a N-layer. 
     
     
         28 . The process according to  claim 27 , wherein said P-layer comprises pentacene, rubrene, tetracene, phthalocyanine, derives thereof, or a mixture thereof. 
     
     
         29 . The process according to  claim 27 , wherein said N-layer comprises C60, C70, derives thereof, or a mixture thereof 
     
     
         30 . The process according to  claim 19 , wherein said active layer comprises a mixture of poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. 
     
     
         31 . The process according to  claim 19 , wherein said electron transport layer comprises bathocuproine (BCP), tris(8-hydroxy- quinolinato)aluminum (Alq3), or a mixture thereof 
     
     
         32 . An electronic device, comprising electric-connected layers in order:
 a cathode;   a hole transport layer;   a fluorine-containing layer, which is deposited directly on said hole transport layer;   an active layer, which is deposited directly on said fluorine-containing layer, an electron transport layer; and   an anode.   
     
     
         33 . The electronic device according to  claim 32 , wherein said hole transport layer has a surface energy of 7˜65 (mJ/m 2 ). 
     
     
         34 . The electronic device according to  claim 32 , wherein said fluorine-containing layer comprises fluorocarbon, silane derives thereof, or a mixture thereof 
     
     
         35 . The electronic device according to  claim 32 , wherein said active layer comprises a P-layer and a N-layer; wherein said P-layer directly contacts with said fluorine-containing layer. 
     
     
         36 . The electronic device according to  claim 35 , wherein said P-layer is a pentacene layer. 
     
     
         37 . The electronic device according to  claim 35 , wherein said N-layer is a C60 layer. 
     
     
         38 . The electronic device according to  claim 36 , wherein said pentacene layer has no fiber-like grain. 
     
     
         39 . The electronic device according to  claim 36 , wherein said pentacene layer has a diffraction pattern as shown in  FIG. 3   b . 
     
     
         40 . The electronic device according to  claim 32 , wherein said active layer comprises a mixture of poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. 
     
     
         41 . The electronic device according to  claim 32 , which has an open-circuit voltage (Voc) of 0.2˜0.8 V. 
     
     
         42 . The electronic device according to  claim 32 , which is a solar cell, a thin film transistor, or a light emitting diode. 
     
     
         43 . An electronic device, comprising electric-connected layers in order:
 a cathode;   a hole transport layer;   a fluorine-containing layer, which is deposited directly on said hole transport layer;   an active layer, which is deposited directly on said fluorine-containing layer, an electron transport layer; and   an anode, which is manufactured by the process according to  claim 19 .   
     
     
         44 . An electronic device, comprising electric-connected layers in order:
 a cathode;   a hole transport layer;   a fluorine-containing layer, which is deposited directly on said hole transport layer;   an active layer, which is deposited directly on said fluorine-containing layer,   an electron transport layer; and an anode, which is manufactured by the process according to  claim 24 .

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