US2013340815A1PendingUtilityA1

Electrode and method of forming the same and electronic device including the same

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Jun 26, 2012Filed: Feb 7, 2013Published: Dec 26, 2013
Est. expiryJun 26, 2032(~5.9 yrs left)· nominal 20-yr term from priority
H10F 77/211C23C 28/02H01B 1/026Y02E10/50C25D 7/126C25D 3/38C22C 1/02H01B 5/14H01B 13/00H01B 1/02Y10T428/12063C23C 28/027H01L 31/022425
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Claims

Abstract

An electrode including a first layer having a sintered product of a metallic glass and a first conductive material, and a second layer including a second conductive material plated using the first layer as a seed layer, a method of manufacturing the same, and an electronic device including the electrode.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An electrode comprising:
 a first layer comprising a sintered product of a metallic glass and a first conductive material; and   a second layer comprising a second conductive material plated using the first layer as a seed layer.   
     
     
         2 . The electrode of  claim 1 , wherein the first conductive material comprises a metal having resistivity of less than about 15 μΩcm. 
     
     
         3 . The electrode of  claim 2 , wherein the first conductive material comprises silver, aluminum, copper, nickel, titanium, an alloy thereof, or a combination thereof. 
     
     
         4 . The electrode of  claim 1 , wherein the second conductive material comprises a metal having resistivity of less than about 100 μΩcm. 
     
     
         5 . The electrode of  claim 4 , wherein the second conductive material comprises copper, nickel, tin, titanium, aluminum, an alloy thereof, or a combination thereof. 
     
     
         6 . The electrode of  claim 1 , wherein the first conductive material comprises silver or a silver alloy, and
 the second conductive material comprises copper or a copper alloy.   
     
     
         7 . The electrode of  claim 1 , wherein the metallic glass has a glass transition temperature of about 50° C. to about 800° C. 
     
     
         8 . The electrode of  claim 1 , wherein the metallic glass comprises an aluminum-based metallic glass, a copper-based metallic glass, a nickel-based metallic glass, a titanium-based metallic glass, a tin-based metallic glass, a cerium-based metallic glass, a strontium-based metallic glass, a gold-based metallic glass, a ytterbium-based metallic glass, a zinc-based metallic glass, a calcium-based metallic glass, a magnesium-based metallic glass, a platinum-based metallic glass, a zirconium-based metallic glass, an iron-based metallic glass, or a combination thereof. 
     
     
         9 . The electrode of  claim 1 , wherein the second layer is thicker than the first layer. 
     
     
         10 . The electrode of  claim 9 , wherein the first layer has a thickness of about 0.1 micrometers to about 50 micrometers, and
 the second layer has a thickness of about 0.2 micrometers to about 100 micrometers.   
     
     
         11 . A method of manufacturing an electrode, comprising:
 applying a conductive paste comprising a first conductive material and a metallic glass on a substrate to provide a first layer; and   plating a second conductive material using the first layer as a seed layer to provide a second layer.   
     
     
         12 . A method of  claim 11 , wherein the providing a first layer comprises:
 applying the conductive paste on the substrate; and   firing the conductive paste.   
     
     
         13 . The method of  claim 11 , wherein the plating of a second conductive material comprises wet plating using a plating solution. 
     
     
         14 . The method of  claim 13 , wherein the plating solution is a basic plating solution. 
     
     
         15 . The method of  claim 13 , wherein the plating solution is an acidic plating solution. 
     
     
         16 . The method of  claim 15 , further comprising providing a buffer layer on the substrate before providing a first layer. 
     
     
         17 . An electronic device comprising the electrode according to  claim 1 . 
     
     
         18 . The electronic device of  claim 17 , further comprising a buffer layer positioned between the first layer of the electrode and a substrate. 
     
     
         19 . The electronic device of  claim 18 , wherein the buffer layer comprises polyimide. 
     
     
         20 . The electronic device of  claim 17 , wherein the electronic device is a solar cell.

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