Devices including tantalum alloy layers

Abstract

A device that includes a sensor stack, the sensor stack including a reference layer, a free layer and a barrier layer positioned between the reference layer and the free layer; a seed layer; and a cap layer, wherein the sensor stack is positioned between the seed layer and the cap layer, and wherein at least one of the seed layer or the cap layer includes TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof.

What is claimed is: 
     
         1 . A device comprising:
 a sensor stack, the sensor stack comprising a reference layer, a free layer and a barrier layer positioned between the reference layer and the free layer;   a seed layer; and   a cap layer,   wherein the sensor stack is positioned between the seed layer and the cap layer, and wherein at least one of the seed layer or the cap layer comprises TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof.   
     
     
         2 . The device according to  claim 1 , wherein the seed layer and the cap layer are amorphous. 
     
     
         3 . The device according to  claim 1 , wherein the seed layer comprises TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof. 
     
     
         4 . The device according to  claim 1 , wherein the cap layer comprises TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof. 
     
     
         5 . The device according to  claim 1 , wherein both the seed layer and the cap layer independently comprise TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof 
     
     
         6 . The device according to  claim 1 , wherein at least one of the seed layer or the cap layer comprises TaCr. 
     
     
         7 . The device according to  claim 6 , wherein the atomic percent of Cr in the TaCr is from about 1% to about 80%. 
     
     
         8 . The device according to  claim 6 , wherein the atomic percent of Cr in the TaCr is from about 20% to about 60%. 
     
     
         9 . The device according to  claim 6 , wherein the atomic percent of Cr in the TaCr is from about 30% to about 50%. 
     
     
         10 . A magneto-resistive device comprising:
 a bottom shield;   a seed layer positioned adjacent the bottom shield;   a sensor stack positioned adjacent the seed layer, the sensor stack comprising a reference layer, a free layer and a barrier layer positioned between the reference layer and the free layer;   a cap layer positioned adjacent the sensor stack; and   a top shield positioned adjacent the cap layer,   wherein at least one of the seed layer or the cap layer comprises TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof.   
     
     
         11 . The magneto-resistive device according to  claim 10 , wherein the seed layer and the cap layer are amorphous. 
     
     
         12 . The magneto-resistive device according to  claim 10 , wherein the seed layer comprises TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof. 
     
     
         13 . The magneto-resistive device according to  claim 10 , wherein the cap layer comprises TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof. 
     
     
         14 . The magneto-resistive device according to  claim 10 , wherein both the seed layer and the cap layer independently comprise TaX, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof . 
     
     
         15 . The magneto-resistive device according to  claim 10 , wherein at least one of the seed layer or the cap layer comprises TaCr. 
     
     
         16 . The magneto-resistive device according to  claim 15 , wherein the atomic percent of Cr in the TaCr is from about 20% to about 60%. 
     
     
         17 . The magneto-resistive device according to  claim 15 , wherein the atomic percent of Cr in the TaCr is from about 30% to about 50%.