US2013345043A1PendingUtilityA1

Magnesium aluminum titanate crystal structure and method for producing same

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Assignee: FUKUDA TSUTOMUPriority: Apr 28, 2004Filed: Aug 28, 2013Published: Dec 26, 2013
Est. expiryApr 28, 2024(expired)· nominal 20-yr term from priority
C04B 2235/3481C04B 2235/349C04B 35/478C04B 2235/6562C04B 35/465C04B 35/46C04B 2235/3418C04B 2235/96C04B 2235/3463C04B 2235/3206C04B 2235/77C04B 2235/3472C04B 2235/9607
55
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Claims

Abstract

To provide an aluminum magnesium titanate crystal structure which can be used stably in variable high temperatures, because of its excellent heat resistance, thermal shock resistance, high thermal decomposition resistance and high mechanical property, and a process for its production. An aluminum magnesium titanate crystal structure, which is a solid solution wherein at least some of Al atoms in the surface layer of aluminum magnesium titanate crystal represented by the empirical formula Mg x Al 2(1−x) Ti (1+x) O 5 (wherein 0.1≦x<1) are substituted with Si atoms, and which has a thermal expansion coefficient of from −6×10 −6 (1/K) to 6×10 −6 (1/K) in a range of from 50 to 800° C. at a temperature raising rate of 20° C./min, and a remaining ratio of aluminum magnesium titanate of at least 50%, when held in an atmosphere of 1,100° C. for 300 hours.

Claims

exact text as granted — not AI-modified
1 - 9 . (canceled) 
     
     
         10 . An aluminum magnesium titanate crystal structure, which comprises a solid solution of aluminum magnesium titanate crystal represented by the empirical formula Mg x Al (1−x) Ti (1+x) O 5 , wherein 0.1≦x<1, and 0.1 to 1 mol % of Al atoms are substituted with Si atoms, wherein
 some Al atoms in a surface layer of the aluminum magnesium titanate crystal are substituted with Si atoms; 
 the aluminum magnesium titanate crystal has a thermal expansion coefficient of from −6×10 −6  (1/K) to 6×10 −6  (1/K) in a range of from 50 to 800° C. at a temperature raising rate of 20° C./min; and 
 the aluminum magnesium titanate crystal has a remaining ratio, α, of aluminum magnesium titanate of at least 50%, after heating in an atmosphere of 1,100° C. for 300 hours, where
   α=100( R/R   o ),
 
     R   o   =I   MAT(023) /( I   MAT(023)   +I   TiO2(110) ) before the heating, 
     R=I   MAT(023) /( I   MAT(023)   +I   TiO2(110) ) after the heating, 
 
 I MAT(023)  is an integrated intensity of a X-ray diffraction peak from the aluminum magnesium titanate corresponding to the (023) face of aluminum magnesium titanate, and 
 I TiO2(110)  is an integrated intensity of an X-ray diffraction peak from the aluminum magnesium titanate corresponding to the (110) face of rutile. 
 
     
     
         11 . The aluminum magnesium titanate crystal structure of  claim 10 , which has a three-point bending strength of at least 25 MPa. 
     
     
         12 . The aluminum magnesium titanate crystal structure of  claim 10 , wherein 0.25 mol % to 0.45 mol % of Al atoms are substituted by silicon atoms. 
     
     
         13 . A process for producing the aluminum magnesium titanate crystal structure as defined in  claim 10 , which comprises firing at a temperature of from 1,200 to 1,700° C., a raw material mixture having 1 to 10 parts by mass of a silicon-containing compound having a melting point of from 700 to 1,500° C., mixed to 100 parts by mass of a mixture comprising a Mg-containing compound, Al-containing compound and Ti-containing compound in the same ratio as the metal component ratio of Mg, Al and Ti in aluminum magnesium titanate represented by the empirical formula Mg x Al 2(1−x) Ti (1+x) O 5 , wherein 0.1≦x<1, as calculated as the respective oxides. 
     
     
         14 . The process of  claim 13 , wherein aluminum magnesium titanate crystal is formed in a liquid phase of the silicon-containing compound. 
     
     
         15 . The process of  claim 13 , wherein molding assistants are added to the raw material mixture, followed by firing a molded product. 
     
     
         16 . The process of  claim 13 , wherein the raw material mixture is subjected to prefiring within a temperature range of from 700 to 1,000° C., followed by firing. 
     
     
         17 . The process of  claim 13 , wherein the silicon-containing compound is an aluminosilicate. 
     
     
         18 . The process of  claim 13 , wherein 0.25 mol % to 0.45 mol % of Al atoms are substituted by silicon atoms. 
     
     
         19 . The process of  claim 17 , wherein the aluminosilicate is at least one mineral selected from the group of minerals consisting of plagioclase, feldspathoid, mica clay mineral, zeolite and cordierite. 
     
     
         20 . The process of  claim 14 , wherein molding assistants are added to the raw material mixture, followed by firing a molded product. 
     
     
         21 . The process of  claim 15 , wherein the raw material mixture is subjected to prefiring within a temperature range of from 700 to 1,000° C., followed by firing. 
     
     
         22 . The process of  claim 14 , wherein the silicon-containing compound is an aluminosilicate. 
     
     
         23 . The process of  claim 15 , wherein the silicon-containing compound is an aluminosilicate. 
     
     
         24 . The process of  claim 16 , wherein the silicon-containing compound is an aluminosilicate. 
     
     
         25 . The process of  claim 20 , wherein the silicon-containing compound is an aluminosilicate. 
     
     
         26 . The process of  claim 21 , wherein the silicon-containing compound is an aluminosilicate. 
     
     
         27 . The process of  claim 22 , wherein the aluminosilicate is at least one mineral selected from the group of minerals consisting of plagioclase, feldspathoid, mica clay mineral, zeolite and cordierite. 
     
     
         28 . The process of  claim 23 , wherein the aluminosilicate is at least one mineral selected from the group of minerals consisting of plagioclase, feldspathoid, mica clay mineral, zeolite and cordierite. 
     
     
         29 . The process of  claim 24 , wherein the aluminosilicate is at least one mineral selected from the group of minerals consisting of plagioclase, feldspathoid, mica clay mineral, zeolite and cordierite. 
     
     
         30 . The process of  claim 25 , wherein the aluminosilicate is at least one mineral selected from the group of minerals consisting of plagioclase, feldspathoid, mica clay mineral, zeolite and cordierite. 
     
     
         31 . The process of  claim 26 , wherein the aluminosilicate is at least one mineral selected from the group of minerals consisting of plagioclase, feldspathoid, mica clay mineral, zeolite and cordierite. 
     
     
         32 . A process for producing an aluminum magnesium titanate crystal structure comprising aluminum magnesium titanate represented by the empirical formula Mg x Al 2(1−x) Ti (1+x) O 5 , wherein 0.1≦x<1, and 0.1 to 1 mol % of Al atoms are substituted with Si atoms, the process comprising
 firing, at a temperature of from 1,200 to 1,700° C., a raw material mixture comprising 
 1 to 10 parts by mass of a silicon-containing compound having a melting point of from 700 to 1,500° C. selected from the group consisting of plagioclase, feldspathoid, mica clay mineral, zeolite and cordierite, and 
 100 parts by mass of a mixture comprising a Mg-containing compound, an Al-containing compound and a Ti-containing compound in the same ratio as the metal component ratio of Mg, Al and Ti in the aluminum magnesium titanate represented by the empirical formula Mg x Al 2(1−x) Ti (1+x) O 5 , wherein 0.1≦x<1, as calculated as the respective oxides. 
 
     
     
         33 . A solid solution of aluminum magnesium titanate crystal represented by the empirical formula Mg x Al 2(1−x) Ti (1+x) O 5 , wherein 0.1≦x<1, and 0.1 to 1 mol % of Al atoms are substituted with Si atoms. 
     
     
         34 . The solid solution of aluminum magnesium titanate crystal of  claim 26 ,
 which has a thermal expansion coefficient of from −6×10 −6  (1/K) to 6×10 −6  (1/K) in a range of from 50 to 800° C. at a temperature raising rate of 20° C./min; and   which has a remaining ratio, α, of aluminum magnesium titanate of at least 50% after heating in an atmosphere of 1,100° C. for 300 hours, where α is 100 (R/R o ), where R=I MAT(023) /(I MAT(023) +I TiO2(110) ) after the heating, R o =I MAT(023) /(I MAT(023) +I TiO2(110) ) before the heating, wherein I MAT(023)  is an integrated intensity of a X-ray diffraction peak from the aluminum magnesium titanate corresponding to the (023) face of aluminum magnesium titanate, and I TiO2(110)  is an integrated intensity of a X-ray diffraction peak from the aluminum magnesium titanate corresponding to the (110) face of rutile.   
     
     
         35 . A solid solution of aluminum magnesium titanate crystal represented by the empirical formula Mg x Al 2(1−x) Ti (1+x) O 5 , wherein 0.1≦x<1,
 wherein 0.1 to 1 mol % of Al atoms are substituted with Si atoms; and 
 wherein said solid solution contains from >0 to 15 parts by mass of SiO 2 , ZrO 2 , Fe 2 O 3 , MgO, Al 2 O 3 , TiO 2 , CaO, Y 2 O 3 , and oxides having a spinel structure containing Mg per 100 parts by mass.

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