Method For Wafer Thinning Process to Decrease the Failure Rate on Split Gate NOR Flash Product

Abstract

A method for wafer thinning process to decrease the failure rate on split gate NOR flash product of the present invention, wherein comprising the following step: a method for wafer thinning process to decrease the failure rate on Split gate NOR flash product, characterized in that including the following steps: Step 1, place the wafer on the chuck and face up the side which needs to grind; Step 2, fix the wafer on the chuck; Step 3, grind the side of wafer which needs to be grinded by a grinding wheel, said grinding wheel and said chuck rotate at the same time during the grinding process; Step 4, clean up the surface of the wafer when the process of grinding is end; Step 5, enter the next process directly without polishing the wafer which has already complete the grinding process. With the use of the method for wafer thinning process to decrease the failure rate on split gate NOR flash product of the present invention, we may optimize the wafer thinning process conditions effectively and grinding by 8000 mesh grinding wheel without polishing and reduce the failure rate on the finished flash product caused by the flash program disturb to 0% at the same time.

I claim: 
     
         1 . A method for wafer thinning process to decrease the failure rate on Split gate NOR flash product, characterized by the following steps:
 Step 1, place the wafer on the chuck and face up the side which needs to grind;   Step 2, fix the wafer on the chuck;   Step 3, grind the side of wafer which needs to be grinded by a grinding wheel, said grinding wheel and said chuck rotate at the same time during the grinding process;   Step 4, clean up the surface of the wafer when the process of grinding is end;   Step 5, enter the next process directly without polishing the wafer which has already complete the grinding process.   
     
     
         2 . The method of  claim 1 , wherein the diameter of said grinding wheel is longer than said diameter of said wafer, and said grinding wheel covers the surface of said wafer. 
     
     
         3 . The method of  claim 1 , wherein said grinding wheel is parallel to said chuck. 
     
     
         4 . The method of  claim 1 , wherein said grinding wheel and said chuck rotates in different directions. 
     
     
         5 . The method of  claim 1 , wherein said grinding wheel is at least 8000 mesh. 
     
     
         6 . The method of  claim 1 , wherein the impurity left is cleared up by coolant when grinding in step 3. 
     
     
         7 . The method of  claim 1 , wherein the thickness of said wafer grinded is 150 um in Step 4.