Laser Processing Method and Semiconductor Device

Abstract

A laser processing method which can reliably form a modified region within an object to be processed along a desirable part in a line to cut is provided. This laser processing method irradiates a substrate 4 with laser light L while locating a light-converging point P within the substrate 4 , so as to form a quality modified region 71 to become a starting point region for cutting within the substrate 4 along a line to cut 5 . Here, the laser light L is oscillated pulsewise along a desirable part RP in the line to cut 5 , and continuously in a predetermined part RC in the line to cut 5 . Consequently, the quality modified region 71 is formed within the substrate 4 along the desirable part RP in the line to cut 5 , whereas no quality modified region 71 is formed within the substrate 4 along the predetermined part RC in the line to cut 5.

1 - 8 . (canceled) 
     
     
         9 . A semiconductor apparatus, comprising:
 a substrate having a front face, a rear face, and a side wall;   a laminate formed on the front face of the substrate, the laminate having a side wall, the side wall of the laminate being flush with the side wall of the substrate;   a metal film embedded in the laminate, the metal film extending substantially in parallel to the front face of the substrate and a side of the metal film being exposed at the side wall of the laminate; and   a modified region having a longitudinal shape extending substantially in parallel to the front face of the substrate and arranged along the side wall of the substrate, the modified region not being formed at an area in the substrate,   wherein the metal film is arranged above the area in the substrate where the modified region is not formed.   
     
     
         10 . The semiconductor apparatus according to  claim 9 ,
 wherein the semiconductor apparatus has a rectangular shape, and the substrate and the laminate each have four side walls that are flush with respect to each other, and   wherein the modified region is located on each of the sidewalls of the substrate.   
     
     
         11 . The semiconductor apparatus according to  claim 10 ,
 wherein the area is located at a central area of the side wall of the substrate, and the modified region is firmed at the edges of the side wall of the substrate.   
     
     
         12 . The semiconductor apparatus according to  claim 9 ,
 wherein the modified region is at least one of a molten processed region of the substrate, a phase change region of the substrate, and a region having a changed crystal structure.   
     
     
         13 . The semiconductor apparatus according to  claim 9 ,
 wherein the modified region is a region in the substrate that has changed from a first structure into a second structure, the first structure being at least one of a monocrystalline structure, an amorphous structure, and a polycrystalline structure, the second structure being at least one of a monocrystalline structure, an amorphous structure, and a polycrystalline structure, and the first and the second structures being different from each other.   
     
     
         14 . The semiconductor apparatus according to  claim 10 , further comprising:
 a functional device located in the laminate but not within a rectangular border area that is arranged along the side walls of the laminate,   wherein the metal film is located in the rectangular border area.