Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices

Abstract

A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N 2 /H 2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.

What is claimed is: 
     
         1 . A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device, comprising the steps of:
 providing a site layer on the light-emitting device;   placing a protection layer on the site layer;   forming a cavity through the protection layer and the site layer; and   growing a window layer in the cavity;   wherein the shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N 2 /H 2  concentration ratio of atmosphere such that light escape angle of the window layer can be changed.   
     
     
         2 . The method according to  claim 1 , wherein the window layer comprises n-type zinc oxide (n-ZnO) or p-type zinc oxide (p-ZnO). 
     
     
         3 . The method according to  claim 1 , wherein the window layer is formed by hydrothermal treatment, sol-gel method, electro-plating, thermal evaporation, chemical vapor deposition (CVD), or molecular beam epitaxy (MBE). 
     
     
         4 . The method according to  claim 1 , further comprising a step of: etching the window layer to form a regularly or irregularly rough surface by wet etching process or dry etching process. 
     
     
         5 . The method according to  claim 1 , wherein the window layer has a thickness larger than 1 μm. 
     
     
         6 . The method according to  claim 1 , wherein the site layer comprises n-Al x In y Ga 1-x-y N, p-Al x In y Ga 1-x-y N, ITO, Ni/Au, NiO/Au, p-ZnO, or n-ZnO, where 0≦x≦1, 0≦y≦1, and 0≦1-x-y≦1. 
     
     
         7 . The method according to  claim 1 , wherein the protection layer comprises photoresist materials or dielectric materials. 
     
     
         8 . The method according to  claim 1 , wherein the atmosphere comprises nitrogen, hydrogen, or a mixture thereof. 
     
     
         9 . The method according to  claim 1 , wherein the window layer has a shape of a rectangular prism or a truncated pyramid. 
     
     
         10 . The method according to  claim 1 , wherein the cavity is formed by wet etching process, dry etching process, or photolithography and exposure development processes.