Light Emitting And Lasing Semiconductor Methods And Devices

Abstract

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.

1 . A method for producing light emission from a three terminal semiconductor device with improved efficiency, comprising the steps of:
 providing a layered semiconductor structure including a semiconductor collector region comprising at least one collector layer, a semiconductor base region disposed on said collector region and including at least one base layer, and a semiconductor emitter region disposed on a portion of said base region and comprising an emitter mesa that includes at least one emitter layer;   providing, in said base region, at least one region exhibiting quantum size effects;   providing a collector electrode on said collector region, providing a base electrode on an exposed surface of said base region, and providing an emitter electrode on the surface of said emitter region;   applying signals with respect to said collector, base, and emitter electrodes to obtain light emission from said base region; and   configuring said base and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.   
     
     
         2 . The method as defined by  claim 1 , further comprising configuring the geometry of said emitter mesa between said base and emitter electrodes for substantial uniformity of voltage distribution in said region between said base and emitter electrodes. 
     
     
         3 . The method as defined by  claim 1 , further comprising providing an optical cavity for said light emission in the region between said base electrode and said emitter electrode 
     
     
         4 . The method as defined by  claim 1 , wherein said emitter mesa has a substantially rectilinear surface portion, and wherein said step of providing said electrodes comprises providing said emitter electrode along one side of said surface portion of the emitter mesa and providing said base electrode on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion. 
     
     
         5 . The method as defined by  claim 4 , wherein said step of providing said electrodes further comprises providing said emitter electrode and said base electrode as opposing linear conductive strips. 
     
     
         6 . The method as defined by  claim 5 , wherein said step of providing said emitter electrode and said base electrode as opposing linear conductive strips further comprises providing said conductive strips as having substantially the same length. 
     
     
         7 . The method as defined by  claim 5 , wherein said step of providing said emitter electrode and said base electrode as opposing linear conductive strips further comprises providing said conductive strips as being of different lengths, so that the surface of emitter mesa between said strips is trapazoidal. 
     
     
         8 . The method as defined by  claim 1 , wherein said step of providing, in said base region, a region exhibiting quantum size effects comprises providing at least one quantum well. 
     
     
         9 . A three terminal light-emitting semiconductor device for producing light emission in response to electrical signals, comprising:
 a layered semiconductor structure including a semiconductor collector region comprising at least one collector layer, a semiconductor base region disposed on said collector region and including at least one base layer, and a semiconductor emitter region disposed on a portion of said base region and comprising an emitter mesa that includes at least one emitter layer;   said base region containing at least one region exhibiting quantum size effects; and   a collector electrode on said collector region, a base electrode on an exposed surface of said base region, and an emitter electrode on the surface of said emitter region, said electrical signals being applied with respect to said collector, base, and emitter electrodes to cause light emission from said base region;   said base and emitter electrodes being configured to obtain substantial uniformity of voltage distribution in the region between said electrodes.   
     
     
         10 . The device as defined by  claim 9 , wherein the geometry of said emitter mesa between said base and emitter electrodes is configured to obtain substantial uniformity of voltage distribution in said region. 
     
     
         11 . The device as defined by  claim 9 , further comprising an optical cavity for said light emission in the region between said base electrode and said emitter electrode. 
     
     
         12 . The device as defined by  claim 9 , wherein said emitter mesa has a substantially rectilinear surface portion, and wherein said emitter electrode is disposed along one side of said surface portion of the emitter mesa and said base electrode is disposed on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion. 
     
     
         13 . The device as defined by  claim 12 , wherein said emitter electrode and said base electrode comprise opposing linear conductive strips. 
     
     
         14 . The device as defined by  claim 13 , wherein said opposing linear conductive have substantially the same length. 
     
     
         15 . The device as defined by  claim 13 , wherein said opposing linear conductive strips have different lengths, so that the surface of emitter mesa between said strips is trapazoidal. 
     
     
         16 . The device as defined by  claim 9 , wherein said region exhibiting quantum size effects comprises at least one quantum well.