Light Emitting And Lasing Semiconductor Methods And Devices

Abstract

A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.

1 . A method for producing light emission from a two terminal semiconductor device with improved efficiency, comprising the steps of:
 providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on said drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of said base region and comprising an emitter mesa that includes at least one emitter layer;   providing, in said base region, at least one region exhibiting quantum size effects;   providing a base/drain electrode having a first portion on an exposed surface of said base region and a further portion coupled with said drain region, and providing an emitter electrode on the surface of said emitter region;   applying signals with respect to said base/drain and emitter electrodes to obtain light emission from said base region; and   configuring said base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.   
     
     
         2 . The method as defined by  claim 1 , further comprising configuring the geometry of said emitter mesa between said electrodes for substantial uniformity of voltage distribution in said region between said electrodes. 
     
     
         3 . The method as defined by  claim 1 , further comprising providing an optical cavity for said light emission in the region between said first portion of the base/drain electrode and said emitter electrode. 
     
     
         4 . The method as defined by  claim 1 , wherein said emitter mesa has a substantially rectilinear surface portion, and wherein said step of providing said electrodes comprises providing said emitter electrode along one side of said surface portion of the emitter mesa and providing the first portion of said base/drain electrode on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion. 
     
     
         5 . The method as defined by  claim 3 , wherein said emitter mesa has a substantially rectilinear surface portion, and wherein said step of providing said electrodes comprises providing said emitter electrode along one side of said surface portion of the emitter mesa and providing the first portion of said base/drain electrode on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion. 
     
     
         6 . The method as defined by  claim 4 , wherein said step of providing said electrodes further comprises providing said emitter electrode and the first portion of said base/drain electrode as opposing linear conductive strips. 
     
     
         7 . The method as defined by  claim 6 , wherein said step of providing said emitter electrode and said first portion of said base/drain electrode as opposing linear conductive strips further comprises providing said conductive strips as having substantially the same length. 
     
     
         8 . The method as defined by  claim 1 , wherein said step of providing, in said base region, a region exhibiting quantum size effects comprises providing at least one quantum well. 
     
     
         9 . The method as defined by  claim 1 , further comprising providing an optical resonant cavity enclosing at least part of said base region, so that said light emission comprises laser emission. 
     
     
         10 . A two terminal light-emitting semiconductor device for producing light emission in response to electrical signals, comprising:
 a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on said drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of said base region and comprising an emitter mesa that includes at least one emitter layer;   said base region containing at least one region exhibiting quantum size effects; and   a base/drain electrode having a flange portion contacting an exposed surface of said base region and a further portion contacting said drain region, and an emitter electrode on the surface of said emitter region, said electrical signals being applied with respect to said base/drain and emitter electrodes to cause light emission from said base region;   said base/drain and emitter electrodes being configured to obtain substantial uniformity of voltage distribution in the region between said electrodes.   
     
     
         11 . The device as defined by  claim 10 , wherein the geometry of said emitter mesa between said electrodes is configured to obtain substantial uniformity of voltage distribution in said region between said electrodes. 
     
     
         12 . The device as defined by  claim 10 , further comprising an optical cavity for said light emission in the region between said flange portion of the base/drain electrode and said emitter electrode. 
     
     
         13 . The device as defined by  claim 10 , wherein said emitter mesa has a substantially rectilinear surface portion, and wherein said emitter electrode is disposed along one side of said surface portion of the emitter mesa and said flange portion of said base/drain electrode is disposed on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion. 
     
     
         14 . The device as defined by  claim 12 , wherein said emitter mesa has a substantially rectilinear surface portion, and wherein said emitter electrode is disposed along one side of said surface portion of the emitter mesa and said flange portion of said base/drain electrode is disposed on a portion of the base region surface adjacent the opposite side of said emitter mesa surface portion. 
     
     
         15 . The device as defined by  claim 13 , wherein said emitter electrode and the flange portion of said base/drain electrode comprise opposing linear conductive strips. 
     
     
         16 . The device as defined by  claim 15 , wherein said linear conductive strips have substantially the same length. 
     
     
         17 . The device as defined by  claim 10 , wherein said region exhibiting quantum size effects comprises at least one quantum well. 
     
     
         18 . The device as defined by  claim 10 , wherein said drain region comprises a tunnel junction comprising an n+ layer and a p+ layer, with said p+ layer being adjacent said base region.