US2014037902A1PendingUtilityA1

Substrate structure and manufacturing method of the same

Assignee: FUJITSU SEMICONDUCTOR LTDPriority: Mar 29, 2007Filed: Oct 8, 2013Published: Feb 6, 2014
Est. expiryMar 29, 2027(~0.6 yrs left)· nominal 20-yr term from priority
Inventors:Akio Kawabata
D01F 9/127Y10T428/2495C23C 26/00B82Y 30/00Y10T428/24413C01B 32/162B82Y 40/00C01B 31/0233
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Claims

Abstract

With TiN being a base material, TiN fine particles are deposited on a silicone substrate by, for example, a laser ablation method so that diameters of the TiN fine particles are about 3 nm, and thereafter, Co fine particles are deposited on the silicon substrate on which the TiN fine particles are deposited, by, for example, the laser ablation method so that sizes of the Co fine particles are equal to or smaller than sizes of the fine particles of the TiN fine particles, here about 1 nm in diameter.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A substrate structure comprising:
 a substrate;   a base material formed in a first region over the substrate;   a catalytic material formed in the first region;   a linear structure made of carbon elements formed on the catalytic material, wherein   the base material is a deposit of a first particle form contacting a surface of the first region, and   the catalytic material is a deposit of a second particle form contacting at least the base material and having a particle diameter equal to or smaller than a particle diameter of the base material, and   the catalytic material is fitted to gaps between each of the first particle.   
     
     
         2 . The substrate structure according to  claim 1 , wherein the catalytic material is a deposit of the second particle form contacting the base material and alienated from the surface of the first region. 
     
     
         3 . The substrate structure according to  claim 1 , wherein the catalytic material is a deposit in which there mixedly exist the second particle contacting the base material and alienated from the surface of the first region and the second particle contacting both the base material and the surface of the first region. 
     
     
         4 . The substrate structure according to  claim 1 , wherein the catalytic material is a deposit of the second particle form contacting both the base material and the surface of the first region. 
     
     
         5 . The substrate structure according  claim 1 , wherein the base material is at least one kind selected from Ti, TiN, Al, and Ta, or is made of a metal oxide. 
     
     
         6 . The substrate structure according to  claim 1 , wherein the catalytic material is at least one kind selected from Fe, Ni and Co. 
     
     
         7 . The substrate structure according to  claim 1 , wherein the catalytic material has a melting point higher than a melting point of the base material.

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