Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits

Abstract

An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

1 - 10 . (canceled) 
     
     
         11 . A method of manufacturing an electronic device, comprising:
 providing a substrate with a dielectric layer thereover and a resistive link between said substrate and said dielectric, wherein said resistive link comprises a silicon semiconductor layer having a first resistivity and a first morphology;   illuminating said resistive link with electromagnetic radiation; and   converting, by said illuminating, a portion of said resistive link from said first morphology and said first resistivity to a different second morphology and second resistivity of said silicon semiconductor layer, wherein said first morphology has a first allotropic state, and said second morphology has a different second allotropic state.   
     
     
         12 . The method as recited in  claim 11 , wherein said second morphology is an amorphous allotrope of said silicon semiconductor layer. 
     
     
         13 . The method as recited in  claim 12 , further comprising the step of then converting at least part of said portion of said resistive link having said different second morphology from said amorphous allotrope to a polycrystalline allotrope. 
     
     
         14 . The method as recited in  claim 11 , wherein said first resistive region comprises a crystalline region being an extension of a lattice of said substrate, and said second resistive region comprises a polycrystalline region or an amorphous region  13 . 
     
     
         15 . The method as recited in  claim 11 , wherein said first allotropic state is a crystalline allotrope of said silicon semiconductor layer. 
     
     
         16 - 18 . (canceled) 
     
     
         19 . The method as recited in  claim 11 , wherein said electromagnetic radiation is generated by a coherent source. 
     
     
         20 . The method as recited in  claim 11 , wherein said electromagnetic radiation is directed with a focal plane intersecting said resistor. 
     
     
         21 . The method as recited in  claim 11 , wherein said directing includes providing a plurality of pulses of said light. 
     
     
         22 . (canceled) 
     
     
         23 . The method as recited in  claim 11 , wherein said resistor is formed over a dielectric layer interposed between said resistor and said substrate.