Semiconductor light emitting device having multi-cell array and method for manufacturing the same

Abstract

A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

1 - 12 . (canceled) 
     
     
         13 . A semiconductor light emitting device comprising:
 a substrate;   a plurality of light emitting cells arranged on the substrate, each light emitting cell of the plurality of light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer to emit blue light;   an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of one light emitting cell of the plurality of light emitting cells to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell of the plurality of light emitting cells; and   a light conversion part disposed in a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion material and a green light conversion material,   wherein the light conversion part is divided into a plurality of groups having a different mixture ratio of at least one of the red light conversion material and the green light conversion material,   wherein the interconnection structure has a portion disposed on a top surface and at least one of side surfaces of the one light emitting cell of the plurality of light emitting cells; and the light conversion part is disposed so as to cover at least the portion of the interconnection structure.   
     
     
         14 . A semiconductor light emitting device comprising:
 a package substrate;   a plurality of multi-chip devices arranged on the package substrate, each multi-chip device of the plurality of multi-chip devices including a plurality of light emitting cells, each of the plurality light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer to emit blue light;   an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of one light emitting cell of the plurality of light emitting cells to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell of the plurality of light emitting cells; and   a plurality of light conversion parts disposed on light paths of the multi-chip devices, the light conversion parts including at least one of a red light conversion material and a green light conversion material,   wherein the light conversion parts are divided into a plurality of groups having a different mixture ratio of at least one of the red light conversion material and the green light conversion material,   wherein the interconnection structure has a portion disposed on a top surface and at least one of side surfaces of the one light emitting cell of the plurality of light emitting cells; and the light conversion part is disposed so as to cover at least the portion of the interconnection structure.   
     
     
         15 . The semiconductor light emitting device of  claim 13 , wherein the light conversion parts further include a yellow light conversion material, and the light conversion parts are divided into a plurality of groups having a different mixture ratio of at least one of the red light conversion material, the green light conversion material, and the yellow light conversion material. 
     
     
         16 . The semiconductor light emitting device of  claim 13 , further comprising a plurality of pads connected to the plurality of groups. 
     
     
         17 . The semiconductor light emitting device of  claim 16 , wherein currents applied through the plurality of pads to the plurality of groups are independently controlled. 
     
     
         18 . The semiconductor light emitting device of  claim 13 , wherein the light conversion part includes a dam part, and the inside of the dam part is filled with the optical conversion material. 
     
     
         19 . The semiconductor light emitting device of  claim 18 , wherein the dam part includes the same material as the optical conversion material. 
     
     
         20 . The semiconductor light emitting device of  claim 18 , wherein the dam part is formed of the same material as the remaining portion of the light conversion part filled in the inside thereof.