US2014072816A1PendingUtilityA1

Bond layers for ceramic or ceramic matrix composite substrates

43
Individually held — no corporate assignee on recordPriority: Mar 23, 2011Filed: Mar 22, 2012Published: Mar 13, 2014
Est. expiryMar 23, 2031(~4.7 yrs left)· nominal 20-yr term from priority
Inventors:Kang N. Lee
C04B 41/009C04B 41/52C04B 41/89F01D 25/005C23C 28/04
43
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Claims

Abstract

A bond layer may include a composition that may be stable at temperatures above about 1410° C. An article may include a substrate, a bond layer formed on the substrate, and an overlayer formed over the bond layer. In some examples, the bond layer may include a substantially homogeneous mixture of Si and at least one of SiO 2 , Al 2 O 3 , ZrO 2 , a rare earth oxide, ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide. In other examples, the bond layer may include Si, an alkali metal oxide, and at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide. In other examples, the bond layer may include B 2 O 3 .

Claims

exact text as granted — not AI-modified
1 . An article comprising:
 a substrate comprising a ceramic, a ceramic matrix composite (CMC), or a metal alloy that includes Si;   a bond layer formed on the substrate, wherein the bond layer comprises a substantially homogeneous mixture of Si and at least one of SiO 2 , Al 2 O 3 , ZrO 2 , a rare earth oxide, ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide; and   at least one of a thermal barrier coating (TBC), an environmental barrier coating (EBC), or a calcia-magnesia-alumina-silicate (CMAS)-resistant layer formed on the bond layer, wherein the bond layer is configured to increase adhesion between the substrate and the at least one of the TBC, the EBC, or the CMAS-resistant layer.   
     
     
         2 . The article of  claim 1 , wherein the bond layer consists essentially of the substantially homogeneous mixture of Si and at the least one of SiO 2 , Al 2 O 3 , ZrO 2 , a rare earth oxide, ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide. 
     
     
         3 . (canceled) 
     
     
         4 . The article of  claim 1 , wherein the bond layer comprises a substantially homogeneous mixture of Si; at least one of SiO 2 , Al 2 O 3 , ZrO 2 , or a rare earth oxide; and at least one of ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide. 
     
     
         5 . (canceled) 
     
     
         6 . The article of  claim 4 , wherein the bond layer comprises up to about 50 wt. % Si, up to about 99 wt. % of the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , or a rare earth oxide, and up to about 20 wt. % of the at least one of ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide, with a total of 100 wt. %. 
     
     
         7 . (canceled) 
     
     
         8 . The article of  claim 1 , wherein
 the bond layer comprises a substantially homogeneous mixture of Si; the alkali metal oxide; and at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or these alkali earth metal oxide.   
     
     
         9 . The article of  claim 8 , wherein consists essentially of Si; the alkali metal oxide; and the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide. 
     
     
         10 . (canceled) 
     
     
         11 . The article of  claim 8 , wherein the bond layer comprises up to about 50 wt. % Si, up to about 20 wt. % of the alkali metal oxide, and up to about 99 wt. % of the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide, with a total of 100 wt. %. 
     
     
         12 . The article of  claim 8 , wherein the bond layer comprises Si; an alkali metal oxide; at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , or a rare earth oxide; and at least one of ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide. 
     
     
         13 . (canceled) 
     
     
         14 . The article of  claim 12 , wherein the bond layer comprises up to about 50 wt. % Si; up to about 20 wt. % of the alkali metal oxide; and up to about 99 wt. % of the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , or a rare earth oxide; and up to about 20 wt. % of the at least one of ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide, with a total of 100 wt. %. 
     
     
         15 . (canceled) 
     
     
         16 . An article comprising:
 a substrate comprising a ceramic, a ceramic matrix composite (CMC), or a metal alloy comprising Si; and   a bond layer formed on the substrate, wherein the bond layer comprises B 2 O 3 ; and   at least one of a thermal barrier coating (TBC), an environmental barrier coating (EBC), or a calcia-magnesia-alumina-silicate (CMAS)-resistant layer formed on the bond layer, wherein the bond layer is configured to increase adhesion between the substrate and the at least one of the TBC, the EBC, or the CMAS-resistant layer.   
     
     
         17 . The article of  claim 16 , wherein the bond layer consists essentially of B 2 O 3 . 
     
     
         18 . (canceled) 
     
     
         19 . The article of  claim 16 , wherein the bond layer comprises up to about 20 wt. % B 2 O 3  and a balance of the at least one of Si, SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , an alkali metal oxide, or an alkali earth metal oxide, with a total of 100 wt. %. 
     
     
         20 . The article of  claim 16 , wherein the bond layer further comprises Si; at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , or a rare earth oxide; and at least one of ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , an alkali metal oxide, or an alkali earth metal oxide. 
     
     
         21 . The article of  claim 20 , wherein the bond layer comprises up to about 20 wt. % B 2 O 3 ; up to about 50 wt. % Si; up to about 99 wt. % of the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , or a rare earth oxide; and up to about 20 wt. % of the at least one of ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , an alkali metal oxide, or an alkali earth metal oxide, with a total of 100 wt. %. 
     
     
         22 . (canceled) 
     
     
         23 . A method comprising:
 forming a bond layer on a substrate comprising a ceramic, a ceramic matrix composite (CMC), or a metal alloy comprising Si, wherein the bond layer comprises a substantially homogeneous mixture of Si and at least one of SiO 2 , Al 2 O 3 , ZrO 2 , a rare earth oxide, ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide; and   forming at least one of a thermal barrier coating (TBC), an environmental barrier coating (EBC), or a calcia-magnesia-alumina-silicate (CMAS)-resistant layer formed on the bond layer, wherein the bond layer is configured to increase adhesion between the substrate and the at least one of the TBC, the EBC, or the CMAS-resistant layer.   
     
     
         24 . The method of  claim 23 , wherein forming the bond layer on the substrate comprises forming on the substrate a bond layer consisting essentially of the substantially homogeneous mixture of Si and the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , a rare earth oxide, ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide. 
     
     
         25 . (canceled) 
     
     
         26 . The method of  claim 23 , wherein forming the bond layer on the substrate comprises:
 forming a first layer comprising Si over the substrate,   forming a second layer comprising the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , a rare earth oxide, ZrSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , an alkali metal oxide, or an alkali earth metal oxide over the substrate, and   wherein heat treating the bond layer comprises heat treating the first layer and the second layer at between about 1350° C. and about 1500° C. for up to about 10 hours to form the bond layer.   
     
     
         27 . The method of  claim 23 , wherein forming the bond layer on the substrate comprising the ceramic, the ceramic matrix composite (CMC), or the metal alloy comprising Si comprises:
 forming a bond layer on the substrate comprising the ceramic, the ceramic matrix composite (CMC), or the metal alloy including Si, wherein the bond layer comprises a substantially homogeneous mixture of Si; an alkali metal oxide; and at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide.   
     
     
         28 - 29 . (canceled) 
     
     
         30 . The method of  claim 27 , wherein forming the bond layer on the substrate comprises:
 forming a first layer comprising Si over the substrate,   forming a second layer comprising the alkali metal oxide and the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide over the substrate, and   wherein heat treating the bond layer comprises heat treating the first layer and the second layer at between about 1350° C. and about 1500° C. for up to about 10 hours to form the layer.   
     
     
         31 . The method of  claim 27 , wherein forming the bond layer on the substrate comprises:
 forming a first layer comprising Si over the substrate,   forming a second layer comprising the alkali metal oxide over the substrate,   forming a third layer comprising the at least one of SiO 2 , Al 2 O 3 , ZrO 2 , HfO 2 , a rare earth oxide, ZrSiO 4 , HfSiO 4 , TiO 2 , Ta 2 O 5 , B 2 O 3 , or an alkali earth metal oxide over the substrate, and   wherein heat treating the bond layer comprises heat treating the first layer, the second layer, and the third layer at between about 1350° C. and about 1500° C. for up to about 10 hours to form the bond layer.   
     
     
         32 - 36 . (canceled)

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