US2014077184A1PendingUtilityA1

Capacitor and organic light emitting diode display including the same

Assignee: SAMSUNG DISPLAY CO LTDPriority: Sep 19, 2012Filed: Jul 17, 2013Published: Mar 20, 2014
Est. expirySep 19, 2032(~6.1 yrs left)· nominal 20-yr term from priority
H10K 50/805H10K 59/131H10K 59/124H10K 59/1213H10K 59/1216H10D 1/68H10D 30/6739H10D 1/692H10P 14/6934H10K 59/123H01L 51/52H01L 28/40
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Claims

Abstract

A capacitor positioned on a substrate insulating layer positioned on a substrate. The capacitor includes a first capacitor electrode positioned on the substrate insulating layer, a second capacitor electrode positioned on the first capacitor electrode, and a capacitor insulating layer coming into contact with the first capacitor electrode and the second capacitor electrode between the first capacitor electrode and the second capacitor electrode, and having a higher dielectric constant than the substrate insulating layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A capacitor structure, comprising:
 a substrate;   a substrate insulating layer positioned on the substrate; and   a capacitor comprising:
 a first capacitor electrode positioned on the substrate insulating layer; 
 a second capacitor electrode positioned on the first capacitor electrode; and 
 a capacitor insulating layer coming into contact with the first capacitor electrode and the second capacitor electrode between the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer. 
   
     
     
         2 . The capacitor structure of  claim 1 , wherein:
 the capacitor insulating layer includes one or more of zirconium (Zr) oxide, hafnium (Hf) oxide, titanium (Ti) oxide, tantalum (Ta) oxide, lanthanum (La) oxide, yttrium (Y) oxide, barium (Ba) oxide, strontium (Sr) oxide, calcium (Ca) oxide, and magnesium (Mg) oxide.   
     
     
         3 . The capacitor structure of  claim 2 , wherein:
 the second capacitor electrode includes a molybdenum (Mo) alloy including nickel (Ni).   
     
     
         4 . The capacitor structure of  claim 3 , wherein:
 the first capacitor electrode includes the molybdenum (Mo) alloy including nickel (Ni).   
     
     
         5 . The capacitor structure of  claim 4 , further comprising:
 a first auxiliary electrode coming into contact with the first capacitor electrode; and   a second auxiliary electrode coming into contact with the second capacitor electrode.   
     
     
         6 . The capacitor structure of  claim 5 , further comprising:
 a third auxiliary electrode coming into contact with the second auxiliary electrode on the second auxiliary electrode to include the molybdenum (Mo) alloy including nickel (Ni).   
     
     
         7 . The capacitor structure of  claim 3 , wherein:
 the first capacitor electrode includes a polysilicon semiconductor material or a metal oxide semiconductor material.   
     
     
         8 . The capacitor structure of  claim 7 , further comprising:
 a fourth auxiliary electrode coming into contact with the second capacitor electrode.   
     
     
         9 . The capacitor structure of  claim 8 , further comprising:
 a fifth auxiliary electrode coming into contact with the fourth auxiliary electrode on the fourth auxiliary electrode to include the molybdenum (Mo) alloy including nickel (Ni).   
     
     
         10 . An organic light emitting diode display comprising:
 a capacitor structure according to  claim 1 ;   a driving thin film transistor including a driving gate electrode connected to the capacitor; and   an organic light emitting element connected to the driving drain electrode of the driving thin film transistor.   
     
     
         11 . The organic light emitting diode display of  claim 10 , further comprising:
 a scan line extending in a first direction;   a data line extending in a second direction crossing the first direction;   a switching thin film transistor including a switching gate electrode connected to the scan line, a switching source electrode connected to the data line, and a switching drain electrode connected to the capacitor and the driving gate electrode; and   a driving power source line connected to the driving source electrode and the capacitor of the driving thin film transistor and extending in the second direction.

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