US2014080293A1PendingUtilityA1
Solar cells having nanowires and methods of fabricating nanowires
Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Aug 18, 2009Filed: Nov 22, 2013Published: Mar 20, 2014
Est. expiryAug 18, 2029(~3 yrs left)· nominal 20-yr term from priority
H10P 14/3462H10P 14/279H10P 14/274H10P 14/20H10F 77/1437H10F 77/148H10F 77/147H10F 71/00H10F 10/17H10F 10/16H10F 10/14H10F 10/00Y02E10/548B82Y 30/00Y02E10/547B82Y 40/00H01L 21/20
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Claims
Abstract
A solar cell includes a plurality of nanowires arranged such that diameters of the nanowires sequentially increase in a first direction along a path of incident light. In a method of forming nanowires, a catalyst layer is formed on a substrate, a plurality of nanoparticles are formed by thermally processing the catalyst layer, and nanowires are grown from the plurality of nanoparticles. The catalyst layer has a thickness that increases in a first direction, and the plurality of nanoparticles have diameters that increase in the first direction.
Claims
exact text as granted — not AI-modified1 - 8 . (canceled)
9 . A method of forming nanowires, the method comprising:
forming a catalyst layer on a substrate, the catalyst layer having a thickness that increases in a first direction; forming a plurality of nanoparticles by thermally processing the catalyst layer, the nanoparticles having diameters that increase in the first direction; and growing a plurality of nanowires from the plurality of nanoparticles.
10 . The method of claim 9 , wherein the grown plurality of nanowires are arranged such that the diameters of the plurality of nanowires sequentially increase in the first direction.
11 . The method of claim 9 , wherein a surface of the substrate on which the catalyst layer is formed is one of vertical and tilted with respect to a top surface of a base unit supporting the substrate.
12 . The method of claim 9 , wherein the catalyst layer is faulted on a tilted surface of the substrate.
13 . The method of claim 9 , wherein the catalyst layer is formed by using one of an electron beam deposition method and a sputtering method.
14 . The method of claim 9 , further comprising:
forming a buffer layer on the substrate, the buffer layer having a thickness that sequentially decreases in the first direction; wherein the forming of the catalyst layer includes, forming a catalyst material layer having a uniform thickness on the buffer layer, and forming the catalyst layer having a thickness that sequentially increases in the first direction by forming a compound layer via reaction between the buffer layer and the catalyst material layer.
15 . The method of claim 9 , wherein the catalyst layer is thermally processed within a temperature range between about 300° C. and about 600° C., inclusive.
16 . The method of claim 9 , wherein the plurality of nanowires are grown by using a chemical vapor deposition (CVD) method.
17 . The method of claim 9 , wherein the plurality of nanowires are grown to have diameters between about 1 nm and about 1 μm, inclusive.
18 . The method of claim 9 , wherein the plurality of nanowires include one of nanotubes and nanorods.Join the waitlist — get patent alerts
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